公开(公告)号：WO1992016962A2

公开(公告)日：1992-10-01

申请号：PCT/US1992001963

申请日：1992-03-11

Applicant: THE BOEING COMPANY

Inventor： THE BOEING COMPANY ,  MANTZ, Joseph, L. ,  HAGER, Harold, E. ,  BOOHER, Daniel, J. ,  FU, R., Jennhwa

IPC: H01L0

CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01L33/0045

Abstract: An LED (or SLD) that comprises a single quantum well active layer, and that relies upon gain saturation to prevent lasing. The LED comprises a layered semiconductor structure having a quantum well active layer characterized by a confinement factor, and by a gain versus current density function that includes a gain saturation region. A stripe electrode is formed on a first surface of the structure to define an optical cavity. The optical cavity is characterized by a threshold gain required to produce lasing, the threshold gain being greater than the gain in the gain saturation region. The area of the stripe electrode is selected to produce a current density within the gain saturation region.

Abstract translation: LED（或SLD），其包括单个量子阱活性层，并且依赖于增益饱和以防止激光。 LED包括具有由限制因子表征的量子阱有源层以及包括增益饱和区的增益对电流密度函数的分层半导体结构。 条形电极形成在该结构的第一表面上以限定光腔。 光腔的特征在于产生激光所需的阈值增益，阈值增益大于增益饱和区域中的增益。 选择条形电极的面积以在增益饱和区域内产生电流密度。

公开(公告)号：WO1992016024A2

公开(公告)日：1992-09-17

申请号：PCT/US1992001962

申请日：1992-03-11

Applicant: THE BOEING COMPANY

Inventor： THE BOEING COMPANY ,  HAGER, Harold, E. ,  MANTZ, Joseph, L.

IPC: H01L33/00

CPC classification number: H01L33/38 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/06 ,  H01S5/0425 ,  H01S5/1021

Abstract: An LED having a broadband emission spectrum. In one embodiment, the LED comprises a layered semiconductor structure of length L, the structure including an active layer comprising multiple asymmetric quantum wells. A pair of stripe electrodes is formed on a surface of the structure, to thereby form at least one optical cavity having a pumped length less than L. Currents to the cavities are controlled as a function of temperature to produce broadband emission over a range of temperatures.