公开(公告)号：WO1997032297A1

公开(公告)日：1997-09-04

申请号：PCT/US1997003296

申请日：1997-02-27

Applicant: THE PENN STATE RESEARCH FOUNDATION

Inventor： THE PENN STATE RESEARCH FOUNDATION ,  FONASH, Stephen, J. ,  SUNTHARALINGAM, Vyshnavi ,  LIN, Xin ,  KRISHNAN, Anand

IPC: G09G03/36

CPC classification number: G09G3/3648 ,  G09G2310/06 ,  G09G2320/0214

Abstract: A method for reducing the field dependence of an off-state current flow condition in a field-effect transistor having a source electrode, a drain electrode and a gate electrode, includes the steps of: applying a far off-state bias between the drain electrode and the gate electrode to drive a conduction channel in the field-effect transistor into a far off-state; and applying a far off-state bias between the source electrode and the gate electrode to again drive the conduction channel into a far off-state; wherein both applying steps cause application of the far off-state bias for a sufficient time to reduce gate voltage dependency of off-state current flow in the conduction channel during a period when an off-state potential is applied to the gate electrode.

Abstract translation: 一种用于降低具有源电极，漏电极和栅电极的场效应晶体管中的截止电流流动状态的场依赖性的方法包括以下步骤：在漏极之间施加远离状态偏置 以及栅极电极，用于将场效应晶体管中的导通沟道驱动为远离状态; 以及在所述源电极和所述栅电极之间施加远离状态偏置以再次将所述导通通道驱动到远离状态; 其中两个施加步骤使得在关闭状态电位施加到栅极电极的时段期间施加远离状态偏压足够的时间以减小导通通道中截止态电流的栅极电压依赖性。