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    ACCUMULATION FIELD EFFECT MICROELECTRONIC DEVICE AND PROCESS FOR THE FORMATION THEREOF
    1.
    发明申请
    ACCUMULATION FIELD EFFECT MICROELECTRONIC DEVICE AND PROCESS FOR THE FORMATION THEREOF 审中-公开
    累积效应微电子器件及其形成过程

    公开(公告)号：WO2008128164A1

    公开(公告)日：2008-10-23

    申请号：PCT/US2008/060208

    申请日：2008-04-14

    Applicant: THE PENN STATE RESEARCH FOUNDATION ,  ASHOK, S. ,  FONASH, Stephen, J. ,  SHAN, Yinghui

    Inventor： ASHOK, S. ,  FONASH, Stephen, J. ,  SHAN, Yinghui

    IPC: H01L21/336 ,  H01L29/78

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78672 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration. A drain with a drain ohmic contact with the drain characterized by a drain dopant type and concentration. An intermediate channel portion characterized by a channel portion dopant type and concentration. An insulative dielectric is in contact with the channel portion and overlaid in turn by a gate. A gate contact applies a gate voltage bias to control charge carrier accumulation and depletion in the underlying channel portion. This channel portion has a dimension normal to the gate which is fully depleted in the off-state. The dopant type is the same across the source, drain and the channel portion of the device. The device on-state current is determined by the doping and, unlike a MOSFET, is not directly proportional to device capacitance.

    Abstract translation: 提供了门控微电子器件，其具有源极与源极源极接触的源极，源极的源极掺杂剂类型和浓度为特征。 具有与漏极欧姆接触的漏极，其特征在于漏极掺杂剂类型和浓度。 中间通道部分，其特征在于通道部分掺杂剂型和浓度。 绝缘电介质与通道部分接触并依次由栅极覆盖。 栅极接触器施加栅极电压偏置以控制底层通道部分中的载流子累积和耗尽。 该通道部分具有​​垂直于关断状态完全耗尽的栅极的尺寸。 掺杂剂类型在器件的源极，漏极和沟道部分上是相同的。 器件导通电流由掺杂决定，与MOSFET不同，器件电容不成正比。

    METHOD AND SYSTEM FOR THE REDUCTION OF OFF-STATE CURRENT IN FIELD-EFFECT TRANSISTORS
    2.
    发明申请
    METHOD AND SYSTEM FOR THE REDUCTION OF OFF-STATE CURRENT IN FIELD-EFFECT TRANSISTORS 审中-公开
    用于减少场效应晶体管中的非状态电流的方法和系统

    公开(公告)号：WO1997032297A1

    公开(公告)日：1997-09-04

    申请号：PCT/US1997003296

    申请日：1997-02-27

    Applicant: THE PENN STATE RESEARCH FOUNDATION

    Inventor： THE PENN STATE RESEARCH FOUNDATION ,  FONASH, Stephen, J. ,  SUNTHARALINGAM, Vyshnavi ,  LIN, Xin ,  KRISHNAN, Anand

    IPC: G09G03/36

    CPC classification number: G09G3/3648 ,  G09G2310/06 ,  G09G2320/0214

    Abstract: A method for reducing the field dependence of an off-state current flow condition in a field-effect transistor having a source electrode, a drain electrode and a gate electrode, includes the steps of: applying a far off-state bias between the drain electrode and the gate electrode to drive a conduction channel in the field-effect transistor into a far off-state; and applying a far off-state bias between the source electrode and the gate electrode to again drive the conduction channel into a far off-state; wherein both applying steps cause application of the far off-state bias for a sufficient time to reduce gate voltage dependency of off-state current flow in the conduction channel during a period when an off-state potential is applied to the gate electrode.

    Abstract translation: 一种用于降低具有源电极，漏电极和栅电极的场效应晶体管中的截止电流流动状态的场依赖性的方法包括以下步骤：在漏极之间施加远离状态偏置 以及栅极电极，用于将场效应晶体管中的导通沟道驱动为远离状态; 以及在所述源电极和所述栅电极之间施加远离状态偏置以再次将所述导通通道驱动到远离状态; 其中两个施加步骤使得在关闭状态电位施加到栅极电极的时段期间施加远离状态偏压足够的时间以减小导通通道中截止态电流的栅极电压依赖性。

    NON-CONTACT ELECTRO-OPTIC DETECTION OF PHOTOVOLTAGES
    5.
    发明申请
    NON-CONTACT ELECTRO-OPTIC DETECTION OF PHOTOVOLTAGES 审中-公开
    非接触式电光检测光电

    公开(公告)号：WO1997014047A1

    公开(公告)日：1997-04-17

    申请号：PCT/US1996015163

    申请日：1996-09-23

    Applicant: THE PENN STATE RESEARCH FOUNDATION

    Inventor： THE PENN STATE RESEARCH FOUNDATION ,  FONASH, Stephen, J.

    IPC: G01R31/28

    CPC classification number: G01R31/311

    Abstract: An electro-optic detector (63) senses induced photovoltages in a semiconductor structure (50) through use of an electro-optic sensing material (64). The sensing material (64) is closely positioned to the surface of a semiconductor structure (50) so as to be locally affected by electric field (62) changes which occur as a result of induced photovoltages. An interrogating optical beam (60) is directed at the semiconductor structure (50) so as to induce locally positioned photovoltages at a surface thereof. An optical sensing beam (70) is directed at the electro-optic sensing material (64) and a detector (63) senses reflections of the optical sensing beam (70) from the electro-optic layer both in regions affected by the local photovoltage field changes and in regions not affected by the local photovoltage field changes. Characteristics of the semiconductor structure (50) are deduced from reflection data derived from the optical sensing beam (70).

    Abstract translation: 电光检测器（63）通过使用电光感测材料（64）感测半导体结构（50）中的感应光电压。 感测材料（64）紧密地定位于半导体结构（50）的表面，以便局部地受到由感应光电压引起的电场（62）变化的影响。 询问光束（60）指向半导体结构（50），以便在其表面处引起局部定位的光伏电压。 光学感测光束（70）指向电光感测材料（64），并且检测器（63）在受局部光电场影响的区域中感测来自电光层的光学感测光束（70）的反射 变化和不受局部光电场变化影响的区域。 来自光学感测光束（70）的反射数据推导出半导体结构（50）的特征。

    ELECTRONIC AND OPTO-ELECTRONIC DEVICES FABRICATED FROM NANOSTRUCTURED HIGH SURFACE TO VOLUME RATIO THIN FILMS
    9.
    发明申请
    ELECTRONIC AND OPTO-ELECTRONIC DEVICES FABRICATED FROM NANOSTRUCTURED HIGH SURFACE TO VOLUME RATIO THIN FILMS 审中-公开

    公开(公告)号：WO2002101352A3

    公开(公告)日：2002-12-19

    申请号：PCT/US2002/017909

    申请日：2002-06-06

    Applicant: THE PENN STATE RESEARCH FOUNDATION

    Inventor： KALKAN, Kaan, A. ,  FONASH, Stephen, J.

    IPC: B81B7/04

    Abstract: An electronic opto-electronic device or a chemical sensor comprising: an interpenetrating network of a nanostructured high surface area to volume ratio film material and an organic/inorganic material forming a nanocomposite. The high surface area to volume film material is obtained onto an electrode substrate first, such that the nano-scale basic elements comprising this film material are embedded in a void matrix while having electrical connectivity with the elctrode substrate. For example, the film material may comprise an array of nano-protrusions electrically connected to the electrode substrate and separated by a void matrix. The interpenetrating network is formed by introducing an appropriate organic/inorganic material into the void volume of the high surface area to vlume film material. Further electrode(s) are defined onto the film or intra-void material to achieve a certain device. Charge separation, charge injection, charge storage, field effect devices, ohmic contacts, and chemical sensors are possible.

    MATRIX-FREE DESORPTION IONIZATION MASS SPECTROMETRY USING TAILORED MORPHOLOGY LAYER DEVICES
    10.
    发明申请
    MATRIX-FREE DESORPTION IONIZATION MASS SPECTROMETRY USING TAILORED MORPHOLOGY LAYER DEVICES 审中-公开
    使用定制的形态层设备进行无矩阵分解离子质谱分析

    公开(公告)号：WO2002093170A1

    公开(公告)日：2002-11-21

    申请号：PCT/US2002/014968

    申请日：2002-05-13

    Applicant: THE PENN STATE RESEARCH FOUNDATION

    Inventor： FONASH, Stephen, J. ,  KALKAN, Ali Kaan ,  CUIFFI, Joseph ,  HAYES, Daniel, J.

    IPC: G01N33/537

    CPC classification number: G01N1/405 ,  G01N2001/045 ,  H01J49/162

    Abstract: There is disclosed an apparatus for providing an ionized analyte for mass analysis by photon desorption comprising at least one layer (11) for contacting an analyte, and a substrate (10) on which said layer (11) is deposited. Upon irradiation of said apparatus, said analyte desorbs and ionizes for analysis by mass spectrometry. The layer of layers of said apparatus comprise a continuous film a discontinuous film or any combination thereof.

    Abstract translation: 公开了一种用于通过光子解吸提供用于质量分析的离子化分析物的装置，其包括用于接触分析物的至少一层（11）和沉积所述层（11）的基底（10）。 在照射所述应用程序时，所述分析物解吸并离子化以通过质谱分析。 所述装置的层的层包括不连续膜或其任何组合的连续膜。

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