公开(公告)号：WO2017017420A1

公开(公告)日：2017-02-02

申请号：PCT/GB2016/052230

申请日：2016-07-22

Applicant: THE UNIVERSITY OF MANCHESTER

Inventor： MCMANUS, Daryl

IPC: H01L51/48 ,  C01B21/064 ,  H01L51/44

CPC classification number: H01L51/0005 ,  C01B21/0648 ,  C01P2004/24 ,  H01L51/0045 ,  H01L51/441

Abstract: The present invention relates to an ink formulation comprising two-dimensional inorganic layered particles. The ink formulations of the present invention are for inkjet printing. The present invention also relates to a process for the preparation of these ink formulations, to the use of these ink formulations for the production of printed films and tracks comprising the inorganic material, to the films or tracks produced by the inkjet printing of these ink formulations, to devices that comprise these films or tracks, and to systems comprising an array of these devices.

Abstract translation: 本发明涉及一种包含二维无机层状颗粒的油墨配方。 本发明的油墨配方用于喷墨印刷。 本发明还涉及制备这些油墨配方的方法，以及使用这些油墨配方用于生产包含无机材料的印刷膜和轨迹到由这些油墨配方的喷墨印刷产生的膜或轨迹 涉及构成这些膜或轨道的装置，以及包括这些装置阵列的系统。

公开(公告)号：WO2018134581A9

公开(公告)日：2018-07-26

申请号：PCT/GB2018/050125

申请日：2018-01-17

Applicant: THE UNIVERSITY OF MANCHESTER

Inventor： MCMANUS, Daryl ,  CASIRAGHI, Cinzia ,  FIORI, Gianluca ,  IANNACCONE, Giuseppe

IPC: H01L51/00 ,  C09D11/30 ,  C09D11/52 ,  C01B32/19

Abstract: The present invention relates to methods for preparing certain electronic and/or memory devices, particularly those in vertical geometry or based on heterostructures. The present invention also relates to the electronic and/or memory devices obtained from these methods and to the use of these electronic and/or memory devices in data storage applications.

公开(公告)号：WO2018134581A1

公开(公告)日：2018-07-26

申请号：PCT/GB2018/050125

申请日：2018-01-17

Applicant: THE UNIVERSITY OF MANCHESTER

Inventor： MCMANUS, Daryl ,  CASIRAGHI, Cinzia ,  FIORI, Gianluca ,  IANNACCONE, Giuseppe

IPC: H01L51/00 ,  C09D11/30 ,  C09D11/52 ,  C01B32/19

CPC classification number: H01L51/0005 ,  C01B32/19 ,  C09D11/322 ,  C09D11/52

Abstract: The present invention relates to methods for preparing certain electronic and/or memory devices, particularly those in vertical geometry or based on heterostructures. The present invention also relates to the electronic and/or memory devices obtained from these methods and to the use of these electronic and/or memory devices in data storage applications.