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公开(公告)号：WO2020171953A1
公开(公告)日：2020-08-27
申请号：PCT/US2020/016801
申请日：2020-02-05
发明人： VORONIN, Sergey , CATANO, Christopher , HAN, Sang Cheol , SRIDHAR, Shyam , YOSHIDA, Yusuke , TALONE, Christopher , RANJAN, Alok
IPC分类号： H01L21/3213 , H01L21/8234
摘要： Residue at the base of a feature in a substrate to be etched is limited so that improved profiles may be obtained when forming vertical, narrow pitch, high aspect ratio features, for example fin field effect transistor (FinFET) gates. A thin bottom layer of the feature is formed of a different material than the main layer of the feature. The bottom material may be comprised of a material that preferentially etches and/or preferentially oxidizes as compared to the main layer. The bottom layer may comprise silicon germanium. The preferential etching characteristics may provide a process in which un-etched residuals do not remain. Even if residuals remain, after etch of the feature, an oxidation process may be performed. Enhanced oxidation rates of the bottom material allow any remaining residual to be oxidized. Plasma oxidation may be used. The oxidized material may then be removed by utilizing standard oxide removal mechanisms.
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公开(公告)号：WO2019055402A1
公开(公告)日：2019-03-21
申请号：PCT/US2018/050435
申请日：2018-09-11
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/311 , H01L21/67
摘要： Provided is a method of modifying a surface of a substrate for improved etch selectivity of nitride etching. In an embodiment, the method includes providing a substrate with a nitride-containing structure, the nitride-containing structure having an oxygen-nitrogen layer. The method may also include performing a surface modification process on the nitride-containing structure with the oxygen-nitrogen layer using one or more gases, the surface modification process generating a cleaned nitride-containing structure. Additionally, the method may include performing a nitride etch process using the cleaned nitride-containing structure, wherein the etched nitride-containing structure are included in 5 nm or lower technology nodes, and the nitride etch process meets target etch rate and target etch selectivity, and the cleaned nitride-containing structure meet target residue cleaning objectives.
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公开(公告)号：WO2018057493A1
公开(公告)日：2018-03-29
申请号：PCT/US2017/052190
申请日：2017-09-19
IPC分类号： H01L21/027 , H01L21/311 , H01L29/66
CPC分类号： H01L21/823431 , H01J37/32935 , H01J2237/334 , H01L21/02057 , H01L21/3065 , H01L21/67069 , H01L21/67253 , H01L22/12 , H01L22/26 , H01L29/66795
摘要： Provided is a method of patterning structures on a substrate using an integration scheme in a patterning system, the method comprising: disposing a substrate in a processing chamber, the substrate having a plurality of structures and a pattern, the substrate including an underlying layer and a target layer, at least one structure intersecting with another structure, each intersection having an intersection angle and a corner, the integration scheme requiring a vertical corner profile at each intersection; altematingly and sequentially etching and cleaning the substrate to transfer the pattern onto the target layer and to achieve a target vertical corner profile at each intersection; controlling selected two or more operating variables of the integration scheme in the alternating and sequential etching and cleaning operations in order to achieve target integration objectives.
摘要翻译： 提供一种在图案化系统中使用集成方案在衬底上图案化结构的方法，所述方法包括：将衬底布置在处理室中，所述衬底具有多个结构和图案， 所述基底包括下层和目标层，至少一个结构与另一个结构相交，每个交点具有交叉角和拐角，所述整合方案在每个交点处需要垂直拐角轮廓; 蚀刻和清洁衬底以将图案转移到目标层上并在每个交叉点处实现目标垂直角轮廓; 在交替和顺序的蚀刻和清洁操作中控制整合方案的选定的两个或更多个操作变量，以实现目标整合目标。
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公开(公告)号：WO2020172208A1
公开(公告)日：2020-08-27
申请号：PCT/US2020/018726
申请日：2020-02-19
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/8234 , H01L29/78
摘要： A method of etching a substrate includes generating plasma comprising a first concentration of an etchant and a second concentration of an inhibitor and etching the substrate by exposing an exposed interface between a first material and a second material to the plasma. The first material includes a lower reactivity to both the etchant and the inhibitor than the second material. The first concentration is less than the second concentration. Etching the substrate includes etching the first material and the second material at the exposed interface to form an etched indentation including an enriched region of the second material, forming a passivation layer at the enriched region using the inhibitor, and etching the first material at the etched indentation. The passivation layer reduces an etch rate of the second material to a reduced rate that is less than an etch rate of the first material.
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5.发明申请
公开(公告)号：WO2018226501A1
公开(公告)日：2018-12-13
申请号：PCT/US2018/035343
申请日：2018-05-31
发明人： KARAKAS, Erdinc , WANG, Li , NOLAN, Andrew , TALONE, Christopher , SRIDHAR, Shyam , RANJAN, Alok , OHTAKE, Hiroto
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/027
摘要： A method of etching is described. The method providing a substrate having a first material composed of silicon-containing organic material and a second material that is different from the first material, forming a chemical mixture by plasma-excitation of a process gas containing SF 6 and an optional inert gas, controlling a processing pressure at or above 100 mtorr, and exposing the first material on the substrate to the chemical mixture to selectively etch the first material relative to the second material.
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公开(公告)号：WO2018053487A1
公开(公告)日：2018-03-22
申请号：PCT/US2017/052222
申请日：2017-09-19
IPC分类号： H01L21/033 , H01L21/311 , H01J37/32
摘要： Systems and methods for in situ hard mask removal are described. In an embodiment, a method includes receiving a semiconductor workpiece (400) comprising a substrate, an intermediary layer (402), a hard mask layer (404), and a photoresist layer (406) in an etch chamber (210). The method may also include etching the hard mask layer (404) to open a region left exposed by the photoresist layer (406). Additionally, such an embodiment may include etching the intermediary layer (402) in a region left exposed by the hard mask layer (404). The method may also include removing the hard mask layer (404). In such embodiments, etching the hard mask layer (404), etching the intermediary layer (402), and removing the hard mask layer (404) are performed in the etch chamber (210), and without the wafer being removed from the etch chamber (210).
摘要翻译： 描述了用于原位硬掩模去除的系统和方法。 在一个实施例中，一种方法包括在蚀刻室（210）中接收包括衬底，中间层（402），硬掩模层（404）和光致抗蚀剂层（406）的半导体工件（400）。 该方法还可以包括蚀刻硬掩模层（404）以打开被光致抗蚀剂层（406）暴露的区域。 另外，这样的实施例可以包括在由硬掩模层（404）暴露的区域中蚀刻中间层（402）。 该方法还可以包括去除硬掩模层（404）。 在这样的实施例中，在蚀刻室（210）中执行蚀刻硬掩模层（404），蚀刻中间层（402）和移除硬掩模层（404），并且没有从蚀刻室移除晶片 （210）。
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