公开(公告)号：WO1985003381A1

公开(公告)日：1985-08-01

申请号：PCT/US1985000131

申请日：1985-01-24

Applicant: TRANSENSORY DEVICES, INC.

Inventor： TRANSENSORY DEVICES, INC. ,  PETERSEN, Kurt, E.

IPC: H01G07/00

CPC classification number: G01L9/0073 ,  Y10T29/435

Abstract: Hermetically sealed electrical feedthrough conductors (12, 14) and (16) are formed across the periphery or boundary (18) between a hermetically sealed region (26) on a semiconductor substrate and a second or external region (20, 22) and (24) thereof by first forming a planar insulative layer (62) on the surface of the silicon substrate along the predetermined path of the feedthrough conductor across the periphery, said insulative layer having at least one planar projection (64, 66) on each side thereof extending out from the path and coming to a point, and then forming thereon a planar metal feedthrough conductor layer (50) that substantially covers the insulative layer, including corresponding metal planar projections (72, 74). An insulator element (40) sized to encapsulate the region to be sealed (44) is then Mallory bonded to the periphery, including the feedthrough conductor, so as to form a hermetic seal along the entire periphery including in the region of said feedthrough conductor. The planar projections form a compression bond that eliminates any tenting region that would otherwise form beneath the insulator element (40) at the edges of the feedthrough conductor and the underlying insulative layer.

公开(公告)号：WO1985003383A1

公开(公告)日：1985-08-01

申请号：PCT/US1985000129

申请日：1985-01-24

Applicant: TRANSENSORY DEVICES, INC.

Inventor： TRANSENSORY DEVICES, INC. ,  PETERSEN, Kurt, E. ,  ALLEN, Henry, V. ,  KNUTTI, James, W.

IPC: H01H35/34

CPC classification number: H01H1/0036 ,  G01P2015/0828 ,  H01H35/14 ,  H01H35/2657 ,  H01H35/346 ,  H01H37/46 ,  H01H2001/0005 ,  H01H2037/008 ,  Y10T307/773

Abstract: A microminiature switch (104) for digitizing different valued external conditions, such as pressure, temperature or acceleration. The switch (104) includes a silicon wafer (108) having a deflectable, reduced-thickness membrane (106) adapted to move from a relaxed position toward increasingly flexed or bulged positions in response to greater-value changes in such external condition. Movement of the membrane (106) from its relaxed position to more strained positions establishes electrical contact between a conductive expanse (130) connected to a common terminal and first one and then progressively more switch state terminals (118) in the switch, wherein the number of switch states which are closed corresponds to the external condition acting on the switch. This construction satisfies the need for reliable, low cost switching devices in microminiature sensing system.