公开(公告)号：WO2008151067A3

公开(公告)日：2009-02-19

申请号：PCT/US2008065400

申请日：2008-05-30

Applicant: UNIV FLORIDA ,  KIM W K ,  ANDERSON TIM

Inventor： KIM W K ,  ANDERSON TIM

IPC: C23C16/18 ,  C23C16/06

CPC classification number: C23C16/305 ,  Y10T428/31678

Abstract: The subject application relates to a chemical vapor (CV) deposition technique to form CuInxGa1-x(SeySi-y)2 compounds. As a copper source, solid copper can be used with a HCl transport gas and Cu3Cl3 is expected to be a major Cu-containing vapor species in this system. Liquid indium and HCl transport gas are appropriate for the indium source to provide InCl vapor species. Since selenium and sulphur are relatively highly volatile, their vapor can be carried by an inert gas without an additional transport gas, although H2Se and H2S can be used. Each source temperature can be controlled separately so as to provide a sufficient and stable vapor flux. Also provided by the subject application are CV-deposited substrates and devices, such as electronic devices or solar cells, that contain CV-deposited CuInxGaI- x(SeySi-y)2 substrates.

Abstract translation: 本申请涉及形成CuInxGa1-x（SeySi-y）2化合物的化学蒸气（CV）沉积技术。 作为铜源，固体铜可以与HCl输送气体一起使用，并且预期Cu 3 Cl 3在该体系中是主要的含Cu蒸气物质。 液态铟和HCl输送气体适用于铟源提供InCl蒸气物质。 由于硒和硫的挥发性相对较高，所以尽管可以使用H2Se和H2S，但它们的蒸气可以通过惰性气体进行运输，而不需要额外的运输气体。 可以分别控制每个源温度，以便提供足够和稳定的蒸气通量。 由本申请提供的还有CV沉积的衬底和诸如电子器件或太阳能电池的器件，其包含CV沉积的CuIn x Ga 1-x（SeySi-y）2衬底。