公开(公告)号：WO2005035841A3

公开(公告)日：2005-06-30

申请号：PCT/US2004033602

申请日：2004-10-12

Applicant: UNIV TEXAS ,  MALDONADO STEPHEN ,  STEVENSON KEITH J

Inventor： MALDONADO STEPHEN ,  STEVENSON KEITH J

IPC: D01F20060101 ,  D01F9/12

CPC classification number: D01F9/127 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/06 ,  H01M4/8657 ,  H01M4/90 ,  H01M4/92

Abstract: Carbon nanostructure (e.g., CNF) electrodes disclosed herein may be conveniently prepared on conductive substrates by pyrolysis of an organometallic nanostructure precursor in a reducing atmosphere. Such electrodes may possess suitable properties for preparation of electrocatalytic electrodes and electrochemical sensors. High surface area nitrogen doped CNFs prepared according to certain embodiments are conductive and may exhibit high stability and improved catalytic activity for O2 reduction in aqueous solutions.

Abstract translation: 本文公开的碳纳米结构（例如，CNF）电极可以通过在还原气氛中热分解有机金属纳米结构前体而在导电基底上方便地制备。 这样的电极可以具有用于制备电催化电极和电化学传感器的合适的性质。 根据某些实施方案制备的高表面积氮掺杂的CNF是导电性的，并且可能表现出对水溶液中的O 2还原的高稳定性和改善的催化活性。

公开(公告)号：WO2013016215A3

公开(公告)日：2013-05-10

申请号：PCT/US2012047666

申请日：2012-07-20

Applicant: UNIV MICHIGAN ,  MALDONADO STEPHEN ,  CARIM AZHAR

Inventor： MALDONADO STEPHEN ,  CARIM AZHAR

IPC: H01L21/208

CPC classification number: C25B1/006 ,  C25C1/22 ,  C30B7/12 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/02645 ,  H01L21/02653

Abstract: An electrochemical liquid-liquid-solid (LLS) process that produces unlimited amounts of crystalline semiconductor, such as Ge or Si, from aqueous or polar solutions with tunable nanostructured shapes without any physical or chemical templating agent is presented. Dissolution into, saturation within, and precipitation of the semiconductor from a liquid electrode (e.g., Hg pool) or near an electrode comprising metallic nanoparticles (e.g., In nanoparticles) yields a polycrystalline semiconductor material, as deposited. Such a process can be conducted at conditions, in a single step, and under electrochemical control, while affording control over formation of a variety of material morphologies. Materials formed by such processes are also provided.

Abstract translation: 介绍了一种电化学液 - 液 - 固（LLS）工艺，该工艺从无需任何物理或化学模板剂的可调纳米结构形状的水溶液或极性溶液中生成无限量的晶体半导体（如Ge或Si）。 半导体从液体电极（例如Hg池）中或在包含金属纳米颗粒（例如In纳米颗粒）的电极附近溶解，饱和以及沉淀，产生沉积的多晶半导体材料。 这样的过程可以在条件下，在单个步骤中和在电化学控制下进行，同时提供对形成多种材料形态的控制。 还提供了由这些过程形成的材料。

公开(公告)号：WO2011103187A3

公开(公告)日：2011-12-22

申请号：PCT/US2011025079

申请日：2011-02-16

Applicant: UNIV MICHIGAN ,  MALDONADO STEPHEN ,  MUKHERJEE JHINDAN

Inventor： MALDONADO STEPHEN ,  MUKHERJEE JHINDAN

IPC: H01L21/20

CPC classification number: H01L21/306 ,  C23C18/18 ,  C23C18/2046 ,  C23C22/05 ,  C23C22/14 ,  C23C22/17 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02538 ,  H01L21/02664

Abstract: This invention provides a semiconductor having a functionalized surface that is resistant to oxidation and that includes a plurality of atoms of a Group III element bonded to organic groups. The functionalized surface has less than or equal to about 1 atom of the Group III element bonded to an oxygen atom per every 1,000 atoms of the Group III element bonded to the organic groups, as determined using X-ray photoelectron spectroscopy. This invention also provides a method of functionalizing the surface and includes the step of halogenating at least one of the plurality of atoms of the Group III element to form halogenated Group III element atoms. The method also includes the step of reacting at least one of the halogenated Group III element atoms with a Grignard reagent to form a bond between the at least one Group III element atom and the organic groups.

Abstract translation: 本发明提供了一种具有抗氧化的功能化表面的半导体，其包括与有机基团键合的多个III族元素原子。 如使用X射线光电子能谱所测定的，官能化表面具有小于或等于约1/3的与结合到有机基团的III族元素的每1,000个原子键合到氧原子的III族元素的原子。 本发明还提供了官能化表面的方法，并且包括卤化III族元素的多个原子中的至少一个原子以形成卤化的III族元素原子的步骤。 该方法还包括使至少一种卤化III族元素原子与格利雅试剂反应以在至少一种III族元素原子和有机基团之间形成键的步骤。