公开(公告)号：WO2018162580A3

公开(公告)日：2018-09-13

申请号：PCT/EP2018/055650

申请日：2018-03-07

Applicant: UNIVERSITY COLLEGE OF SOUTHEAST NORWAY

Inventor： LU, Pai ,  CHEN, Xuyuan

IPC: H01G11/26 ,  H01G11/46 ,  H01G11/02 ,  H01G11/70 ,  H01G11/86 ,  H01G11/32 ,  H01G11/48 ,  H01G11/28 ,  H01G11/24 ,  H01G11/68

Abstract: An on-chip supercapacitor constituted by a silicon substrate and a porous carbon layer positioned thereon, the carbon layer including pseudocapacitive materials. The invention also relates to the method for producing the supercapacitor and the porous material.

公开(公告)号：WO2018162479A1

公开(公告)日：2018-09-13

申请号：PCT/EP2018/055471

申请日：2018-03-06

Applicant: UNIVERSITY COLLEGE OF SOUTHEAST NORWAY

Inventor： CHEN, Xuyuan ,  LU, Pai ,  ØHLCKERS, Per Alfred

IPC: H01G11/26 ,  H01G11/46 ,  H01G11/02 ,  H01G11/70 ,  H01G11/86 ,  H01G11/68 ,  H01G11/28

Abstract: An on-chip supercapacitor having an electrode comprising one-dimensional silicon (Si) nanostructures (3) coated with a first layer (10) of titanium nitride (TiN). It further comprises a second layer (20) of manganese dioxide (MnO2)deposited on the first layer. An associated method is also disclosed.

公开(公告)号：WO2018162580A2

公开(公告)日：2018-09-13

申请号：PCT/EP2018/055650

申请日：2018-03-07

Applicant: UNIVERSITY COLLEGE OF SOUTHEAST NORWAY

Inventor： LU, Pai ,  CHEN, Xuyuan

IPC: H01G11/26 ,  H01G11/46 ,  H01G11/02 ,  H01G11/70 ,  H01G11/86 ,  H01G11/32 ,  H01G11/48

CPC classification number: H01G11/26 ,  H01G11/24 ,  H01G11/32 ,  H01G11/46 ,  H01G11/48 ,  H01G11/68 ,  H01G11/70 ,  H01G11/86 ,  Y02E60/13

Abstract: An on-chip supercapacitor constituted by a silicon substrate and a porous carbon layer positioned thereon, the carbon layer including pseudocapacitive materials. The invention also relates to the method for producing the supercapacitor and the porous material.