公开(公告)号：WO2015066234A1

公开(公告)日：2015-05-07

申请号：PCT/US2014/062996

申请日：2014-10-29

Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

Inventor： HASFAR, Zaihas Amri Fahdzan ,  ONG, Choo-Bhin

IPC: G06F12/00

CPC classification number: G06F3/0632 ,  G06F3/0604 ,  G06F3/0673 ,  G11B19/2054

Abstract: When a read command is received from a host requesting data stored on a disk of a Data Storage Device (DSD), it is determined whether the DSD is in a startup period and whether the requested data is stored in a solid state memory of the DSD. The requested data is designated for storage in the solid state memory if it is determined that the DSD is in the startup period and the requested data is not stored in the solid state memory.

Abstract translation: 当从主机接收到请求存储在数据存储设备（DSD）的磁盘上的数据的读取命令时，确定DSD是处于启动时段，以及请求的数据是否存储在DSD的固态存储器中 。 如果确定DSD处于启动时段并且请求的数据未被存储在固态存储器中，则所请求的数据被指定用于存储在固态存储器中。

公开(公告)号：WO2015148321A1

公开(公告)日：2015-10-01

申请号：PCT/US2015/021850

申请日：2015-03-20

Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

Inventor： DING, Lu ,  ONG, Choo-Bhin ,  GUDA, Chandra M. ,  KUTAS, Michael C.

IPC: G06F3/06

CPC classification number: G06F3/0616 ,  G06F3/064 ,  G06F3/0655 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/1036 ,  G06F2212/217 ,  G06F2212/502 ,  G06F2212/7204

Abstract: Lifetime extension of a non-volatile semiconductor memory (NVSM) for a data storage device (DSD) includes determining a write amplification factor based on an amount of data previously written to the NVSM and at least one of an amount of data previously requested to be written to the DSD, and an amount of data previously requested to be written to the NVSM. At least a portion of the amount of data to be written to the NVSM is directed or redirected to the disk based on the determined write amplification factor.

Abstract translation: 用于数据存储设备（DSD）的非易失性半导体存储器（NVSM）的寿命延长包括基于先前写入NVSM的数据量和先前请求的数据量中的至少一个来确定写入放大系数 写入DSD，以及先前请求写入NVSM的数据量。 要写入NVSM的数据量的至少一部分基于所确定的写入放大因子被引导或重定向到盘。

公开(公告)号：WO2015066088A1

公开(公告)日：2015-05-07

申请号：PCT/US2014/062741

申请日：2014-10-28

Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

Inventor： HASFAR, Zaihas Amri Fahdzan ,  ONG, Choo-Bhin ,  CHENG, Jonathan K.

IPC: G11B19/20

CPC classification number: G11B25/043 ,  G11B19/044 ,  G11B19/2054

Abstract: A data storage device (DSD) enters a high spindle suppression (HSS) mode to reduce instances of rotation of a spindle motor of the DSD during the HSS mode. When a read command is received from a host to read requested data from the DSD in the HSS mode, it is determined whether the requested data is not stored in a solid state memory of the DSD. If it is determined that the requested data is not stored in the solid state memory, the spindle motor is controlled to rotate a disk of the DSD. The requested data is read from the disk and stored in the solid state memory before completing transfer of the requested data to the host.

Abstract translation: 数据存储设备（DSD）进入高主轴抑制（HSS）模式，以在HSS模式期间减少DSD的主轴电机的旋转实例。 当从主机接收到读取命令以在HSS模式下从DSD读取所请求的数据时，确定所请求的数据是否不存储在DSD的固态存储器中。 如果确定所请求的数据未被存储在固态存储器中，则主轴电动机被控制以旋转DSD的盘。 在将所请求的数据传送到主机之前，请求的数据从磁盘读取并存储在固态存储器中。