公开(公告)号：WO2022010584A1

公开(公告)日：2022-01-13

申请号：PCT/US2021/033912

申请日：2021-05-24

Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

Inventor： HWANG, Cherngye ,  LIU, Xiaoyong ,  LE, Quang ,  HO, Kuok San ,  TAKANO, Hisashi ,  YORK, Brian R.

IPC: G11B5/39 ,  G11B5/11 ,  G11B5/315

Abstract: The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device comprising a first seed layer, a first spin hall effect (SHE) layer, a first interlayer, a first free layer, a gap layer, a second seed layer, a second SHE layer, a second free layer, and a second interlayer. The gap layer is disposed between the first SHE layer and the second SHE layer. The materials and dimensions used for the first and second seed layers, the first and second interlayers, and the first and second SHE layers affect the resulting spin hall voltage converted from spin current injected from the first free layer and the second free layer, as well as the ability to tune the first and second SHE layers. Moreover, the SOT differential reader improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).

公开(公告)号：WO2023022764A1

公开(公告)日：2023-02-23

申请号：PCT/US2022/027960

申请日：2022-05-06

Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

Inventor： LE, Quang ,  YORK, Brian R. ,  HWANG, Cherngye ,  OKAMURA, Susumu ,  LIU, Xiaoyong ,  HO, Kuok San ,  TAKANO, Hisashi

IPC: H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400°C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

公开(公告)号：WO2023038680A1

公开(公告)日：2023-03-16

申请号：PCT/US2022/028238

申请日：2022-05-08

Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

Inventor： OKAMURA, Susumu ,  KAISER, Christian ,  YORK, Brian R.

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: A tunneling magnetoresistance (TMR) device has an improved seed layer for the lower or first ferromagnetic layer that eliminates the need for boron in the two ferromagnetic layers. The seed layer, for example a RuAl alloy, has a B2 crystalline structure with (001) texture when deposited on an amorphous pre-seed layer, meaning that the (001) plane is parallel to the surface of the TMR device substrate. The subsequently deposited first ferromagnetic layer, like a CoFe alloy, and the tunneling barrier layer, typically MgO, inherit the (001) texture of the seed layer.

公开(公告)号：WO2023018455A1

公开(公告)日：2023-02-16

申请号：PCT/US2022/027962

申请日：2022-05-06

Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

Inventor： LE, Quang ,  YORK, Brian R. ,  HWANG, Cherngye ,  OKAMURA, Susumu ,  GRIBELYUK, Michael ,  LIU, Xiaoyong ,  HO, Kuok San ,  TAKANO, Hisashi

IPC: G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/10

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.

公开(公告)号：WO2021221726A1

公开(公告)日：2021-11-04

申请号：PCT/US2020/065156

申请日：2020-12-15

Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

Inventor： LE, Quang ,  HWANG, Cherngye ,  YORK, Brian R. ,  CHEN, Andrew ,  NGUYEN, Thao A. ,  AHN, Yongchul ,  LIU, Xiaoyong ,  JIANG, Hongquan ,  GAO, Zheng ,  HO, Kuok San

IPC: H01L43/06 ,  H01L43/14 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  G11B5/37 ,  G11B2005/0018 ,  G11B2005/0032 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01L27/222 ,  H01L43/04

Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.