公开(公告)号：WO2005052997A3

公开(公告)日：2006-09-28

申请号：PCT/US2004038823

申请日：2004-11-19

Applicant: WISCONSIN ALUMNI RESARCH FOUND ,  MA ZHENQIANG ,  JIANG NINGYUE

Inventor： MA ZHENQIANG ,  JIANG NINGYUE

IPC: H01L20060101 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/73 ,  H01L29/737 ,  H01L31/072 ,  H01L27/102 ,  H01L27/082

CPC classification number: H01L29/42304 ,  H01L29/0692 ,  H01L29/41708 ,  H01L29/73 ,  H01L29/7304 ,  H01L29/7378

Abstract: A high-power solid-state transistor structure comprised of a plurality of emitter or gate fingers in a uniform or non-uniform manner to provide improved high power performance is disclosed. Preferably, each of the fingers is associated with a corresponding one of a plurality of sub-cells, the sub-cells being arranged in at least one row. The advantage of the invention is that the structure can be practically implemented and the absolute thermal stability can be maintained for very high power transistors with reduced adverse effects resulting from random variation in the manufacturing and design process.

Abstract translation: 公开了一种以均匀或不均匀的方式由多个发射极或栅极指状构成的高功率固态晶体管结构，以提供改进的高功率性能。 优选地，每个手指与多个子单元中的对应的一个子单元相关联，该子单元布置在至少一行中。 本发明的优点在于，可以实际地实现该结构，并且可以保持对于具有由制造和设计过程中的随机变化导致的不利影响减小的非常高功率晶体管的绝对热稳定性。