摘要:
Wafers on a first wafer carrier in a tank are lifted from the first wafer carrier and a bath in the tank so as to accomplish Marangoni drying of the wafers. The lifted dry wafers are positioned on a second wafer carrier in a chamber and shifted to an offset position. A barrier, which can be a wall of the chamber with or without a sweeping flow of gas, impedes the passage of deposits to the wafers arising during drying of the first wafer carrier. Static electricity can be discharged from wafer supports in the offset position.
摘要:
The invention relates to a drying apparatus for use in a lithography system for drying a planar object such as a wafer, the apparatus comprising a drying device for eliminating liquid or droplets thereof from a planar target such as a wafer, wherein said device comprises a first slit and a second slit arranged in close proximity of the target, a gap being present between the target and the dryer, the first slit included for supplying pressurised gas into said gap directed to the target, the second slit included for discharging said liquid by means of said gas away from the target.
摘要:
Bei einem Verfahren zum Behandeln von zumindest einem Substrat (15), insbesondere von Wafern, in einem flüssigen Medium (3), wird in einem ersten Schritt das Substrats (15) in dem flüssigen Medium (3) angehoben, bis das Substrat (15) zumindest teilweise aus dem flüssigen Medium (3) ausgehoben ist, und in einem zweiten Schritt an zumindest einer aus dem flüssigen Medium (3) herausragenden Stelle übernommen.
摘要:
Apparatuses and methods for drying a surface of a substrate includes a proximity drying head having a head body that includes a process surface configured to be disposed opposite a surface of a substrate when present. The process surface includes a first region, a second region and a third region. The first region is defined at a leading edge of the head body and includes a cavity region that is recessed into the head body. The cavity region includes a plurality of inlet ports that are used to introduce a vapor fluid to the cavity region. The second region is disposed proximate to the surface of the substrate when present and is located beside the first region. The third region is disposed proximate to the surface of the substrate when present and is located beside the second region.
摘要:
A method and apparatus for drying semiconductor wafers uses hot isopropyl alcohol in liquid form at temperatures above 60°C and below 82°C. The use of hot IPA better avoids pattern collapse and permits reduced consumption of IPA. The wafer temperature can be maintained by applying hot deionized water to the opposite wafer sideand by evaporating the hot IPA from the wafer surface using heated nitrogen gas.
摘要:
The present invention is directed to provide a vacuum dryer which offers a short drying time, does not leave stains and does not use isopropyl alcohol (IPA), thereby reducing the risk of fire and eliminating the production of pollutants, and a drying method using the same. As such, there are provided a dryer and a drying method using the same, wherein the dryer comprises: a vacuum chamber that has a dispenser nozzle formed at a cover part thereof and an outlet formed at the bottom for discharging gas therethrough; a stand that is placed within the vacuum chamber and is used as a site for arraying a plurality of wafers or disks thereon; and a punching plate that is placed between the stand and the outlet within the vacuum chamber and has a plurality of holes formed therein.
摘要:
Disclosed is a flat plate precision floating system, comprising: a 1st unit and 2nd unit made of sequential and repetitive floating flat plates, each of which has a nozzle block with a planar portion formed parallel and flat to the conveying direction of the flat plate, and a pair of opposite angled portions with upper left and right edges that are angled with respect to the flat plate, a pair of nozzle plates formed to enclose the angled portions and outer peripheries of the nozzle block at positions having the same height or slightly lower than the pair of opposite angled portions of the nozzle block, and a pair of opposite angled nozzle portions formed by the pair of opposite angled portions and the nozzle plates, the flat plate floating portion inducing angled, gas or liquid fluid jet discharge through the opposed pair of angled nozzle portions to flow at an upward angle toward the bottom of the flat plate, and suspending the flat plate at a predetermined distance with suspending force on the upper portion of the nozzle block planar portion at which the oppositely discharged angled fluid jets converge; and suction unit applying suction force to the flat plate through low pressure generated by angled fluid jets discharged through a pair of opposite angled nozzle portions formed between the 1st unit and the 2nd unit, wherein the flat plate is securely suspended and fixed by simultaneously applying the suspending forces from the1st and 2nd units, and the suction force from the flat plate suction unit.
摘要:
본 발명은 평판을 유체(기체 또는 액체)로 정밀 부양시키기 위한 평판 정밀 플로팅 시스템에 관한 것으로, 상기 평판의 이송방향에 대하여 평행하고 평평하게 형성되어 평판과의 부양간격을 형성하는 평탄부와 상기 평판에 대하여 상부 좌우 모서리부가 경사지게 형성된 대향되는 한쌍의 경사부를 가지는 노즐블럭과, 상기 노즐블럭의 대향되는 한쌍의 경사부 높이와 같거나 약간 아래의 위치에서 상기 노즐블럭의 경사부 및 외주면을 감싸며 형성된 한쌍의 노즐플레이트와, 상기 노즐블럭의 대향되는 한쌍의 경사부와 한쌍의 노즐플레이트로 형성된 대향되는 한쌍의 경사노즐부를 포함하여 구성되어 상기 대향되는 한쌍의 경사노즐부를 통하여 토출된 경사제트유체(기체 또는 액체)가 상기 평판 하부를 향하여 상향 경사지게 흐르도록 하고, 상기 대향되게 토출된 경사제트유체(기체 또는 액체)가 서로 만나는 노즐블럭 평탄부 상부에서 형성되는 압력(부양력)으로 평판을 일정한 간격으로 부양시키는 평판 플로팅부가 연이어 반복구성되어 형성된 제1평판 플로팅부 및 제2평판 플로팅부; 상기 제1평판 플로팅부 및 상기 제2평판 플로팅부 사이에 형성되는 한쌍의 반대향 경사노즐부를 통하여 토출된 경사제트유체(기체 또는 액체)로 인해 저압이 생성되어 상기 평판에 흡인력을 작용시키는 평판 흡인부;를 포함하여 구성되어 상기 제1평판 플로팅부 및 상기 제2평판 플로팅부에 의한 부양력 및 상기 평판 흡인부에 의한 흡인력의 동시 작용으로 인해 평판의 안정적인 부양고정도를 갖게 하는 것을 특징으로 하는 경사제트유체를 이용한 평판 정밀플로팅시스템에 관한 것이다.