摘要:
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of fine alignment of an e-beam tool includes projecting an electron image of a plurality of apertures of an e-beam column over an X-direction alignment feature of a wafer while moving the wafer along the Y-direction. The method also includes detecting a time-resolved back-scattered electron (BSE) detection response waveform during the projecting. The method also includes determining an X-position of every edge of every feature of the X-direction alignment feature by calculating a derivative of the BSE detection response waveform. The method also includes, subsequent to determining an X-position of every edge of every feature of the X-direction alignment feature, adjusting an alignment of the e-beam column to the wafer.
摘要:
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of data compression or data reduction for e-beam tool simplification involves providing an amount of data to write a column field and to adjust the column field for field edge placement error on a wafer, wherein the amount of data is limited to data for patterning approximately 10% or less of the column field. The method also involves performing e-beam writing on the wafer using the amount of data.
摘要:
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a layout for a metallization layer of an integrated circuit includes a first region having a plurality of unidirectional lines of a first width and a first pitch and parallel with a first direction. The layout also includes a second region having a plurality of unidirectional lines of a second width and a second pitch and parallel with the first direction, the second width and the second pitch different than the first width and the first pitch, respectively. The layout also includes a third region having a plurality of unidirectional lines of a third width and a third pitch and parallel with the first direction, the third width and the third pitch different than the first and second widths and different than the first and second pitches.
摘要:
The invention relates to an assembly (1) for enclosing a target processing machine. The assembly comprises an enclosure (2) and a transfer unit (3). The enclosure comprises a base plate (21) for arranging said target processing machine thereon, side wall panels (22), which are fixed to said base plate, and a top wall panel (23) which is fixed to said side wall panels. In addition, the enclosure comprises an access opening (24) in a side wall of the enclosure. The transfer unit comprising one or more transfer elements (31) for moving the transfer unit with respect to the base plate. The transfer unit further comprises a door panel (32) which is arranged for closing the access opening, wherein the door panel is movably mounted to the transfer unit by means of a flexible coupling (33) which allows a movement of the door panel with respect to the transfer unit at least in a direction towards and/or away from the enclosure.
摘要:
The invention relates to a drying apparatus for use in a lithography system for drying a planar object such as a wafer, the apparatus comprising a drying device for eliminating liquid or droplets thereof from a planar target such as a wafer, wherein said device comprises a first slit and a second slit arranged in close proximity of the target, a gap being present between the target and the dryer, the first slit included for supplying pressurised gas into said gap directed to the target, the second slit included for discharging said liquid by means of said gas away from the target.
摘要:
The invention relates to an apparatus and method for inspecting a sample. The apparatus comprises a generator for generating an array of primary charged particle beams (33), and a charged particle optical system with an optical axis (38). The optical system comprises a first lens system (37, 310) for focusing all primary beams (33) into a first array of spots in an intermediate plane, and a second lens system (313, 314) for focusing all primary beams (33) into a second array of spots on the sample surface (315). The apparatus comprises a position sensitive backscattered charged particle detector (311) positioned at or near the intermediate plane. The second lens system comprises an electromagnetic or electrostatic lens which is common for all charged particle beams. Preferably the second lens system comprises a magnetic lens for rotating the array of primary beams (33) around the optical axis (38) to position the second array of charged particle spots with respect to the first array at an angle.
摘要:
A charged particle multi-beamlet lithography system comprising a beamlet generator for generating beamlets, a beamlet modulator for forming modulated beamlets, and a beamlet projector for projecting the modulated beamlets onto a target surface. The generator, modulator and/or projector comprise one or more plates provided with apertures for letting the beamlets pass through the plate. The apertures are grouped to form beam areas distinct from non-beam areas having no beamlet apertures. At least one of the plates with apertures is provided with a cooling arrangement (93) disposed on its surface in a non-beam area. The cooling arrangement comprising a plate-shaped body with an inlet (31) for receiving a cooling liquid, a plurality of cooling channels (94) for conveying the cooling liquid therein, and an outlet (35) for removing the cooling liquid. Between the cooling channels, the plate- shaped body has slots (34) that are aligned with the beam areas.
摘要:
A charged particle multi-beamlet lithography system comprising a beamlet generator for generating beamlets, a beamlet modulator for forming modulated beamlets, and a beamlet projector for projecting the modulated beamlets onto a target surface. The generator, modulator and/or projector comprise one or more plates provided with apertures for letting the beamlets pass through the plate. The apertures are grouped to form beam areas distinct from non-beam areas having no beamlet apertures. At least one of the plates with apertures is provided with a cooling arrangement (93) disposed on its surface in a non-beam area. The cooling arrangement comprising a plate-shaped body with an inlet (31) for receiving a cooling liquid, a plurality of cooling channels (94) for conveying the cooling liquid therein, and an outlet (35) for removing the cooling liquid. Between the cooling channels, the plate- shaped body has slots (34) that are aligned with the beam areas.
摘要:
The invention relates to an arrangement for transporting radicals. The arrangement includes a plasma generator and a guiding body. The plasma generator includes a chamber (2) in which a plasma may be formed. The chamber has an inlet (5) for receiving an input gas, and one or more outlets (6) for removal of at least one of the plasma and radicals created therein. The guiding body is hollow and is arranged for guiding radicals formed in the plasma towards an area or volume at which contaminant deposition is to be removed. The chamber inlet is coupled to a pressure device (40) for providing a pulsed pressure into the chamber so as to create a flow in the guiding body.
摘要:
A method for operating a target processing system for processing a target (23) on a chuck (13), the method comprising providing at least a first chuck position mark (27) and a second chuck position mark (28) on the chuck (13); providing an alignment sensing system (17) arranged for detecting the first and second chuck position marks (27, 28), the alignment sensing system (17) comprising at least a first alignment sensor (61) and a second alignment sensor (62); moving the chuck (13) to a first position based on at least one measurement of the alignment sensing system (17); and measuring at least one value related to the first position of the chuck.