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1.发明申请
公开(公告)号：WO2023080969A1
公开(公告)日：2023-05-11
申请号：PCT/US2022/045272
申请日：2022-09-29
IPC分类号： H01J37/32 , C23C16/505 , C23C16/455 , C23C16/52 , H01L21/67
摘要： Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more side walls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. The first and second gas flows comprise a process gas mixture and/or an independent gas injection (IGI) mixture.
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公开(公告)号：WO2023071875A1
公开(公告)日：2023-05-04
申请号：PCT/CN2022/126076
申请日：2022-10-19
申请人： 北京北方华创微电子装备有限公司
发明人： 程旭文
IPC分类号： H01L21/67 , H01L21/677 , C23C16/458 , C23C16/52
摘要： 本申请公开一种半导体工艺设备、托盘及片盒，涉及半导体装备领域。一种半导体工艺设备，包括工艺腔室、传输腔室和装载腔室，装载腔室用于容置片盒，片盒用于承载托盘，传输腔室中设有传输装置，用于在工艺腔室和装载腔室之间传输托盘；装载腔室和传输腔室的交接处设有图像识别装置，图像识别装置用于在传输装置携带托盘移动过程中，识别托盘上预设的特征图像，确定托盘的特征信息；半导体工艺设备还包括控制器，控制器用于获取特征信息，从预设的托盘信息库中查找与特征信息对应的传输参数，控制传输装置根据传输参数传输托盘。一种托盘，应用于半导体工艺设备。一种片盒，用于承载托盘。本申请能够解决传输精度低、耗时耗力等问题。
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公开(公告)号：WO2023049285A1
公开(公告)日：2023-03-30
申请号：PCT/US2022/044427
申请日：2022-09-22
摘要： A method of detecting failure causes in semiconductor processing systems may include receiving an indication of a failure in a semiconductor processing system and providing the indication of the failure as a query to a network representing the semiconductor processing system. The network may include nodes representing on-wafer effects and component functions, and relationships between the nodes that represent causal dependencies between the component functions and the on-wafer effects. The method may also include calculating a change in probabilities assigned to nodes representing the component functions resulting from the query, and generating an output indicating a probability of at least one of the component functions as a cause of the failure.
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4.发明申请
公开(公告)号：WO2023001569A1
公开(公告)日：2023-01-26
申请号：PCT/EP2022/068860
申请日：2022-07-07
申请人： FESTO SE & CO. KG
发明人： GLATTBACH, Tobias
IPC分类号： C23C16/455 , G01F11/00 , C23C16/52
摘要： Die Erfindung betrifft eine Prozesseinrichtung (1) zur Werk- stückbearbeitung, insbesondere für die Halbleiterproduktion, mit einer Prozesskammer (2) zur Aufnahme von Werkstücken und zur Durchführung eines Bearbeitungsprozesses unter Verwendung wenigstens eines Prozessgases und mit einer Dosiereinrichtung (3) für wenigstens ein Prozessgas, die fluidisch mit der Prozesskammer (2) verbunden ist und die einen elastisch deformierbar Ausgebildeten Dosierbehälter (4) aufweist, der ein größenvariables Gasvolumen (95) begrenzt und an dem ein Fluidanschluss (5) für eine Gaszufuhr in das Gasvolumen (24) 10 und/oder für eine Gasabfuhr aus dem Gasvolumen (24) ausgebildet ist, sowie mit einer Antriebseinrichtung (6) zur Einleitung einer Deformationsbewegung auf den Dosierbehälter (4) und mit einer Steuereinrichtung (7) zur Ansteuerung der Antriebseinrichtung (6).
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公开(公告)号：WO2022239683A1
公开(公告)日：2022-11-17
申请号：PCT/JP2022/019381
申请日：2022-04-28
申请人： 東京エレクトロン株式会社
发明人： 小畑 雄治
摘要： レーザー光を用いて、基板の処理が行われる処理空間に供給された処理ガスの温度と濃度とを測定する技術を提供する。基板を処理する装置に設けられた処理ガス供給部は、処理空間に処理ガスを供給し、投光部は処理ガスが供給された処理空間に対して、互いに異なる波長範囲内で波長が変化するレーザー光を投光する。受光部は、処理空間を通過したレーザー光を受光し、温度算出部は、各波長範囲のレーザー光の吸収スペクトルに基づき、処理ガスの温度を算出し、濃度算出部は前記波長範囲内の特定の波長のレーザー光の吸光度に基づき処理ガスの濃度を算出する。
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公开(公告)号：WO2022238412A2
公开(公告)日：2022-11-17
申请号：PCT/EP2022/062654
申请日：2022-05-10
IPC分类号： G02B1/10 , C23C14/54 , C23C14/547 , C23C16/52
摘要： The invention relates to a computer-implemented method (20) of generating data for calibrating optical coating apparatuses configured to apply optical coatings to surfaces of substrates. The method comprises measuring spectral data of a test optical coating having one or more coating layers applied by an optical coating apparatus (12, 107, 405) at a first location; sending a coating data file containing the spectral data to a second location; comparing (26), at the second location, the measured spectral data of the test optical coating applied by the optical coating apparatus to target specification data for the test optical coating for the optical coating apparatus; and determining (28), at the second location, correction factors for correcting deviations to the target specification data for the optical coating apparatus based on the comparison of the measured spectral data and the target specification data; and receiving a target data file containing the correction factors at the first location and calibrating the optical coating apparatus (12, 107, 405) by adjusting at least one operation parameter of the optical coating apparatus (12, 107, 405) based on the correction factors to correct for the deviations to the target specification data.
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7.发明申请
公开(公告)号：WO2022186776A1
公开(公告)日：2022-09-09
申请号：PCT/SG2022/050106
申请日：2022-03-02
摘要： Herein disclosed is a device structurally configured to render a continuous layer of semiconducting material to form on a substrate, the device includes one or more blade structures, wherein each of the one or more blade structures have (i) one end which a precursor source is to be placed proximal to and (ii) the other end spaced apart from the substrate, and a supporting structure arranged peripheral to the one or more blade structures for supporting the substrate to be placed thereon or therewith, wherein the one or more blade structures are arranged to define one or more spaces which direct vapor produced from the precursor source toward the other end of each of the one or more blade structures, and wherein (i) the supporting structure, (ii) the substrate to be placed thereon, and (iii) the one or more blade structures define an area which confines the vapor to the area, thereby having the continuous layer of semiconducting material formed on a surface of the substrate which is adjacent to the area.
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公开(公告)号：WO2022183818A1
公开(公告)日：2022-09-09
申请号：PCT/CN2021/142367
申请日：2021-12-29
申请人： 北京北方华创微电子装备有限公司
发明人： 仲光宇
IPC分类号： H01L21/67 , H01L21/677 , C23C16/458 , C23C16/52
摘要： 一种半导体加工设备中的加热装置及半导体加工设备，该加热装置设置在半导体加工设备的传输腔室中，且包括动力机构（1）、执行机构（2）和发热机构（3），其中，执行机构（2）分别与动力机构（1）和发热机构（3）连接，动力机构（1）用于驱动执行机构（2）带动发热机构（3）摆动；发热机构（3）用于在摆动过程中朝传输腔室中的传输部件（4）的不同位置传递热量。该加热装置可以对传输腔室中的传输部件（4）进行加热，可以对机械手手指（102）进行预热，从而避免机械手中的电子元器件因受到工艺腔室（101）的高温烘烤而损坏。
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公开(公告)号：WO2022160595A1
公开(公告)日：2022-08-04
申请号：PCT/CN2021/103642
申请日：2021-06-30
申请人： 长鑫存储技术有限公司
发明人： 李锋
摘要： 一种薄膜沉积方法以及薄膜沉积装置。薄膜沉积方法包括：将基片放入炉管内，炉管包括用于放置基片的第一区段，第一区段具有反应气体的进气口；在第一预设时间内，将对第一区段进行加热的第一加热模块从第一初始温度加热至第一预设温度，第一加热模块包围第一区段；在第二预设时间内，保持第一加热模块持续处于第一预设温度；以及在第三预设时间内，将反应气体由进气口通入炉管内，且将第一加热模块由第一预设温度升温至第二预设温度，以于放置于第一区段的基片表面形成目标薄膜。
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公开(公告)号：WO2022115313A1
公开(公告)日：2022-06-02
申请号：PCT/US2021/059971
申请日：2021-11-18
摘要： A substrate processing system comprises an etch chamber configured to perform an etch process on a substrate, the etch chamber comprising an optical sensor to generate one or more optical measurements of a film on the substrate during and/or after the etch process. The system further comprises a computing device operatively connected to the etch chamber, wherein the computing device is to: receive the one or more optical measurements of the film; determine, for each optical measurement of the one or more optical measurements, a film thickness of the film; determine an etch rate of the film based on the one or more optical measurements using the determined film thickness of each optical measurement of the one or more optical measurements; and determine a process parameter value of at least one process parameter for a previously performed process that was performed on the substrate based on the etch rate.
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