公开(公告)号：WO2021144681A1

公开(公告)日：2021-07-22

申请号：PCT/IB2021/050172

申请日：2021-01-11

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： ALFARAJ, Nasir ,  LI, Kuang-Hui ,  BRAIC, Laurentiu ,  KISS, Adrian Emil ,  ZOITA, Nicolae Catalin

IPC: H01L21/20 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02565 ,  H01L21/02631

Abstract: A method for growing a semiconductor material over a Si-based substrate includes providing (200) the Si-based substrate (310); growing (208) a monocrystalline refractory-metal ceramic film (320) directly over the Si-based substrate (310); and depositing (210) a semiconductor film (330) directly over the monocrystalline refractory-metal ceramic film (320). The monocrystalline refractory-metal ceramic film (320) has a thickness less than 300 nm.

公开(公告)号：WO2021198805A1

公开(公告)日：2021-10-07

申请号：PCT/IB2021/051777

申请日：2021-03-03

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： XU, Xiangming ,  ALSHAREEF, Husam Niman

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/02422 ,  H01L21/02428 ,  H01L21/02491 ,  H01L21/02529 ,  H01L21/0254

Abstract: There is a method for making a high-performance opto-electronic device (1300) on an amorphous substrate. The method includes growing (1600) on a single-crystal substrate (1304), a single-crystal, oxide film (1302); applying a first chemical processing (1602) to the single-crystal, oxide film (1302) to obtain a first transferrable, single-crystal, chalcogenide film (1308); transferring (1604) the transferrable, single crystal, chalcogenide film (1308) from the single-crystal substrate (1304) to an amorphous substrate or polycrystalline metal substrate (1316); applying a second chemical processing (1606) to the transferrable, single-crystal, chalcogenide film (1308) to obtain a single-crystal, non-oxide film (1320), wherein the single-crystal, non-oxide film (1320) is different from the transferrable, single-crystal, chalcogenide film (1308); and growing (1608) a wide-bandgap semiconductor film (1324) using the single-crystal, non-oxide film (1320) as a seeding layer to obtain the opto-electronic device (1300) on the amorphous glass or polycrystalline metal substrate. The first chemical processing is different from the second chemical processing.

公开(公告)号：WO2022212086A1

公开(公告)日：2022-10-06

申请号：PCT/US2022/020853

申请日：2022-03-18

Applicant: GOVERNMENT OF THE UNITED STATES, AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE

Inventor： GLAVIN, Nicholas, R. ,  MURATORE, Christopher

IPC: H01L21/36 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02568 ,  H01L21/02667 ,  H01L21/02675

Abstract: The present invention relates to processes of making components for electronic and optical devices using laser processing and devices comprising such components. Such process uses a laser to introduce chemical and/or structural changes in substrates and films that are the raw materials from which components for electronic and optical devices are made. Such process yields components that can have one or more electronic and/or optical functionalities that are integrated on the same substrate or film. In addition, such process does not require large- scale clean rooms and is easily configurable. Thus, rapid device prototyping, design change and evolution in the lab and on the production side is realized.