公开(公告)号：WO2021141876A1

公开(公告)日：2021-07-15

申请号：PCT/US2021/012141

申请日：2021-01-05

Applicant: APPLIED MATERIALS, INC.

Inventor： YOON, Byunghoon ,  GANGULI, Seshadri ,  CEN, Xi

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  H01L21/768 ,  C23C16/45534 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266

Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.