公开(公告)号：WO2021150397A1

公开(公告)日：2021-07-29

申请号：PCT/US2021/013084

申请日：2021-01-12

Applicant: QUALCOMM INCORPORATED

Inventor： BAO, Junjing ,  LU, Ye ,  FENG, Peijie ,  TANG, Chenjie ,  ZHU, Xiaochun

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/8234 ,  H01L27/11 ,  H01L29/775 ,  H01L29/06 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/823412 ,  H01L21/823807 ,  H01L27/0922 ,  H01L27/1104 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78651 ,  H01L29/78684 ,  H01L29/78696

Abstract: Certain aspects of the present disclosure relate to a gate-all-around (GAA) semiconductor device. A GAA semiconductor device includes a plurality of nanosheet stack structures disposed vertically above a horizontal plane of a substrate, wherein: each nanosheet stack structure of the plurality of nanosheet stack structures comprises one or more nanosheets; the one or more nanosheets of a first nanosheet stack structure (206a) of the plurality of nanosheet stack structures comprise a first semiconductor material; and the one or more nanosheets of a second nanosheet stack structure (206b, 206c) of the plurality of nanosheet stack structures comprise a second semiconductor material different from the first semiconductor material.

公开(公告)号：WO2022269447A1

公开(公告)日：2022-12-29

申请号：PCT/IB2022/055686

申请日：2022-06-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM (CHINA) INVESTMENT COMPANY LTD. ,  IBM DEUTSCHLAND GMBH

Inventor： XIE, Ruilong ,  MILLER, Eric ,  GUO, Dechao ,  SHEARER, Jeffrey ,  FAN, Su Chen ,  FROUGIER, Julien ,  BASKER, Veeraraghavan ,  WANG, Junli ,  SUK, Sung Dae

IPC: H01L27/088 ,  H01L21/336 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02609 ,  H01L21/823807 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/78651 ,  H01L29/78684 ,  H01L29/78696

Abstract: A semiconductor device comprising at least one first gate all around channel having a horizontal physical orientation, wherein the at least one first gate all around channel is comprised of a first material, wherein the at least one first gate all around channel has a sidewall surface with (100) crystal orientation. At least one second gate all around channel having a vertical physical orientation, wherein the second channel is located above the at least one first gate all around channel, wherein the at least one second gate all around channel is comprised of a second material, wherein the at least one second gate all around channel has a sidewall surface with (110) crystal orientation. A gate metal enclosing the at least one first gate all around channel and the at least one second gate all around channel.