公开(公告)号：WO2022007842A1

公开(公告)日：2022-01-13

申请号：PCT/CN2021/104980

申请日：2021-07-07

申请人： THE UNIVERSITY OF HONG KONG

发明人： CHAN, Kwok Leung ,  PENG, Boyu

IPC分类号： H01L51/50 ,  H01L51/52 ,  H01L51/0003 ,  H01L51/0023 ,  H01L51/0074 ,  H01L51/0558

摘要： A method for manufacturing a semiconductor device having an organic semiconductor material is provided. The method includes performing a large-area solution shearing step to form a monolayer (1L) or bi-layer (2L) C 10-DNTT crystals with low shearing speed and forming Au electrodes by thermal evaporation on a wafer. The large-area solution shearing step is performed at a temperature in a range between about 60 ℃ and about 65℃ and with a shearing speed in a range between about 2 μm/sand about 3 μm/s. The 1L or 2L crystals have single-crystalline domains extending over several millimeters. An organic field-effect transistor (OFET) comprising an active layer that comprises a monolayer (1L) or bi-layer (2L) C 10-DNTT crystals formed according to the method is also provided.

公开(公告)号：WO2022031747A1

公开(公告)日：2022-02-10

申请号：PCT/US2021/044402

申请日：2021-08-03

申请人： FACEBOOK TECHNOLOGIES, LLC

发明人： PURVIS, Lafe Joseph, II ,  MALHOTRA, Tanya ,  OUDERKIRK, Andrew, John ,  RAO, Tingling

IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L51/0012 ,  H01L51/0034 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0558 ,  H01L51/0562

摘要： An organic field effect transistor includes a channel structure having a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer, where a charge carrier mobility varies along a thickness direction of the channel structure. The channel structure may define an active area between a source and a drain of the transistor and may include alternating layers of at least two photoalignment layers and at least two organic semiconductor layers. Each photoalignment layer is configured to influence an orientation of molecules within an overlying organic semiconductor layer and hence impact the mobility of charge carriers within the device active area while also advantageously decreasing the OFF current of the device.

公开(公告)号：WO2022106958A2

公开(公告)日：2022-05-27

申请号：PCT/IB2021/060361

申请日：2021-11-09

申请人： KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

发明人： ISIKGOR, Furkan Halis ,  DE WOLF, Stefaan ,  ZHUMAGALI, Shynggys ,  SUBBIAH, Anand Selvin ,  DE BASTIANI, Michele

IPC分类号： H01L51/54 ,  C07F15/00 ,  C07F15/0053 ,  H01L2251/303 ,  H01L51/0086 ,  H01L51/0558 ,  H01L51/422 ,  H01L51/5012

摘要： A semiconductor device (300, 900, 950,1000, 1050, 1200, 1250) includes a first electrode (302), a metal oxide layer (212) formed over the first electrode (302), a passivation layer (310) formed over a surface (210) of the metal oxide layer (212), an active layer (304) configured to transform light (305) into electrical charges (320, 322) or to transform electrical charges (320, 322) into the light (305), and a second electrode (312) formed over the active layer (304) and configured to channel the electrical charges (320, 322). The passivation layer (310) includes a metal-organic complex (400).

公开(公告)号：WO2022031745A1

公开(公告)日：2022-02-10

申请号：PCT/US2021/044400

申请日：2021-08-03

申请人： FACEBOOK TECHNOLOGIES, LLC

发明人： PURVIS II, Lafe Joseph ,  MALHOTRA, Tanya ,  OUDERKIRK, Andrew John ,  RAO, Tingling

IPC分类号： H01L51/05 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0055 ,  H01L51/0074 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/0558

摘要： An organic field effect transistor includes a channel structure defining an active area located between a source and a drain. The channel structure includes a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer. The photoalignment layer is configured to influence an orientation of molecules within the organic semiconductor layer and hence impact the mobility of charge carriers both within the active area and adjacent to the active area.