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公开(公告)号:WO2023026188A1
公开(公告)日:2023-03-02
申请号:PCT/IB2022/057890
申请日:2022-08-23
Inventor: ALSHAREEF, Husam , AYDIN, Erkan , DE WOLF, Stefaan , EL-DEMELLAWI, Jehad , REHMAN, Atteq ur
IPC: H01B1/16 , H01B1/22 , H01L31/0224 , H05K1/09
Abstract: A MXene-Ag paste (320) for forming electrical contacts includes Ag particles (402), glass frits (404), and MXene flakes (110). The MXene is given by Mn+1XnTx with n = 1, 2, 3, or 4, where M represents early transition metals, X is carbon and/or nitrogen, and Tx denotes surface-terminated species including hydroxyl, fluorine, and/or oxygen.
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公开(公告)号:WO2023089539A1
公开(公告)日:2023-05-25
申请号:PCT/IB2022/061110
申请日:2022-11-17
Inventor: AYDIN, Erkan , AZMI, Randi , DE BASTIANI, Michele , DE WOLF, Stefaan
Abstract: A perovskite solar cell (100) for converting solar energy into electricity includes a substrate (102), a 3D perovskite layer (110) located on the substrate (102), and a 2D perovskite layer (112) directly located on the 3D perovskite layer (110). The 2D perovskite layer (112) is anchored to the 3D perovskite layer (110) with oleylammonium-iodide (OLAI) molecules (300), and each of the 2D and 3D perovskite layer includes the same perovskite material.
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公开(公告)号:WO2018234878A1
公开(公告)日:2018-12-27
申请号:PCT/IB2018/053087
申请日:2018-05-03
Inventor: YANG, Xinbo , DE WOLF, Stefaan , AYDIN, Erkan
IPC: H01L51/42
Abstract: A photovoltaic device includes an energy absorbing semiconductor substrate, a titanium nitride and/or tantalum nitride hole-blocking layer electrically coupled to the energy absorbing semiconductor substrate, and first and second electrodes electrically coupled to the energy absorbing semiconductor substrate.
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公开(公告)号:WO2023026189A1
公开(公告)日:2023-03-02
申请号:PCT/IB2022/057892
申请日:2022-08-23
Inventor: AYDIN, Erkan , DE WOLF, Stefaan , LIU, Jiang
IPC: H01L27/30 , H01L31/076 , H01L51/42 , H01L51/46
Abstract: A tandem solar cell (100) includes a first-type base (102) having first and second surfaces (102A, 102B), opposite to each other, a second-type layer (108) formed on the second surface (102B) of the first-type base (102), wherein the first-type is one of n- or p-type and the second-type is another of the n- or p-type, and the second-type layer (108) and the first-type base (102) form a first pn junction, and an additive-treated perovskite layer (124) formed on the first surface (102A) of the first-type base (102), wherein the additive-treated perovskite layer (124) and the first-type base (102) form a second pn junction. The additive-treated perovskite layer (124) has an organic additive (310) that includes carbon, hydrogen and nitrogen, and is distributed at borders between grains (Gi) of the perovskite layer. The additive-treated perovskite layer (124) includes a perovskite material that has a band gap equal to or larger than 1.65 eV.
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公开(公告)号:WO2022113038A1
公开(公告)日:2022-06-02
申请号:PCT/IB2021/061074
申请日:2021-11-29
Inventor: ISIKGOR, Furkan Halis , DE WOLF, Stefaan
IPC: H01L51/42
Abstract: A semiconductor device (300) includes a substrate (302), a first electrode (304) located on the substrate (302), a metal halide perovskite layer (310) located on the first electrode (304), a second electrode (316) located on the metal halide perovskite layer (310), and passivation molecules (100) that passivate the metal halide perovskite layer (310). The metal halide perovskite layer (310) has (1) a top surface defect (320) located in a top surface (310A) and (2) an inter-grain defect (322) located at an interface (310B) between two adjacent grains (311A, 311B), and the passivation molecules (100) passivate at least one of the top surface defect (320) and the inter-grain defect (322).
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公开(公告)号:WO2022130062A1
公开(公告)日:2022-06-23
申请号:PCT/IB2021/060655
申请日:2021-11-17
Inventor: DE WOLF, Stefaan , DE BASTIANI, Michele , SUBBIAH, Anand Selvin , ISIKGOR, Furkan Halis , AYDIN, Erkan
IPC: H01L27/30
Abstract: A solar module (500) for transforming solar energy into electrical energy includes a substrate (502) and a pair (520) of solar cells (520-1, 520-2) formed on the substrate (502) next to each other and electrically connected in series to each other through a top common back electrode (514). A first solar cell (520-1) of the pair (520) has a pin configuration, and a second solar cell (520-2) of the pair (520) has a nip configuration. The pin configuration has hole and electron transport layers located in a reverse order relative to the nip configuration..
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公开(公告)号:WO2022106958A2
公开(公告)日:2022-05-27
申请号:PCT/IB2021/060361
申请日:2021-11-09
Inventor: ISIKGOR, Furkan Halis , DE WOLF, Stefaan , ZHUMAGALI, Shynggys , SUBBIAH, Anand Selvin , DE BASTIANI, Michele
IPC: H01L51/54 , C07F15/00 , C07F15/0053 , H01L2251/303 , H01L51/0086 , H01L51/0558 , H01L51/422 , H01L51/5012
Abstract: A semiconductor device (300, 900, 950,1000, 1050, 1200, 1250) includes a first electrode (302), a metal oxide layer (212) formed over the first electrode (302), a passivation layer (310) formed over a surface (210) of the metal oxide layer (212), an active layer (304) configured to transform light (305) into electrical charges (320, 322) or to transform electrical charges (320, 322) into the light (305), and a second electrode (312) formed over the active layer (304) and configured to channel the electrical charges (320, 322). The passivation layer (310) includes a metal-organic complex (400).
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