PHASE STABLE PEROVSKITE FILM AND METHOD
    4.
    发明申请

    公开(公告)号:WO2023026189A1

    公开(公告)日:2023-03-02

    申请号:PCT/IB2022/057892

    申请日:2022-08-23

    Abstract: A tandem solar cell (100) includes a first-type base (102) having first and second surfaces (102A, 102B), opposite to each other, a second-type layer (108) formed on the second surface (102B) of the first-type base (102), wherein the first-type is one of n- or p-type and the second-type is another of the n- or p-type, and the second-type layer (108) and the first-type base (102) form a first pn junction, and an additive-treated perovskite layer (124) formed on the first surface (102A) of the first-type base (102), wherein the additive-treated perovskite layer (124) and the first-type base (102) form a second pn junction. The additive-treated perovskite layer (124) has an organic additive (310) that includes carbon, hydrogen and nitrogen, and is distributed at borders between grains (Gi) of the perovskite layer. The additive-treated perovskite layer (124) includes a perovskite material that has a band gap equal to or larger than 1.65 eV.

    CONCURRENT CATIONIC AND ANIONIC METAL HALIDE PEROVSKITE DEFECT PASSIVATION METHOD AND DEVICE

    公开(公告)号:WO2022113038A1

    公开(公告)日:2022-06-02

    申请号:PCT/IB2021/061074

    申请日:2021-11-29

    Abstract: A semiconductor device (300) includes a substrate (302), a first electrode (304) located on the substrate (302), a metal halide perovskite layer (310) located on the first electrode (304), a second electrode (316) located on the metal halide perovskite layer (310), and passivation molecules (100) that passivate the metal halide perovskite layer (310). The metal halide perovskite layer (310) has (1) a top surface defect (320) located in a top surface (310A) and (2) an inter-grain defect (322) located at an interface (310B) between two adjacent grains (311A, 311B), and the passivation molecules (100) passivate at least one of the top surface defect (320) and the inter-grain defect (322).

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