公开(公告)号：WO2023075856A2

公开(公告)日：2023-05-04

申请号：PCT/US2022/029316

申请日：2022-05-13

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： SHARANGPANI, Rahul ,  MAKALA, Raghuveer S. ,  AMANO, Fumitaka ,  ISHIKAWA, Kensuke

IPC: H10B43/50 ,  H10B41/50 ,  H10B43/27 ,  H10B41/27 ,  H01L21/768

Abstract: A semiconductor structure includes a first dielectric material layer, a first metal interconnect structure embedded within the first dielectric material layer and including a first metallic material portion including a first metal, a second dielectric material layer located over the first dielectric material layer, and a second metal interconnect structure embedded within the second dielectric material layer and including an integrated line-and-via structure that includes a second metallic material portion including a second metal. A metal-semiconductor alloy portion including a first metal-semiconductor alloy of the first metal and a semiconductor material is located underneath the second metallic material portion, and contacts a top surface of the first metal interconnect structure.