US08471458B2
There is provided a light emitting device which includes a light emitting element having a main emission peak in the wavelength region of greater than 420 nm and equal to or less than 500 nm, and a phosphor layer formed on the light emitting element. The light emitting element of this light emitting device has a junction temperature of from 100° C. to 200° C. at the time of continuous driving. Furthermore, the phosphor layer contains a phosphor represented by the following general formula (A), which absorbs the light emitted from the light emitting element and thereby emits light having a main emission peak in the wavelength region of equal to or greater than 650 nm and equal to or less than 665 nm: (Mg1-x,AEx)a(Ge1-y,Sny)bOcHAd:zMn (A) wherein AE represents at least one or more elements selected from the group consisting of Ca or Sr; HA represents at least one or more elements selected from the group consisting of F or Cl; 2.54≦a≦4.40, 0.80≦b≦1.10, 3.85≦c≦7.00, 0≦d≦2.00, 0≦x≦0.05, 0≦y≦0.10, and 0
US08471457B2
A transparent plate with a transparent conductive film for an organic electroluminescent element, comprising a transparent plate main body and a transparent conductive film formed on a surface of the transparent plate main body, wherein when the refractive index of the transparent conductive film is represented by n1, and the refractive index of the transparent plate main body is represented by n2, n1 and n2 satisfy the following Expression (1): { n 2 - n 1 < 0.4 n 1 ≤ 1.8 , Expression ( 1 ) and the transparent conductive film has a transmittance of light in a visible region of 80% or more, a volume resistivity of 1 Ω·cm or less, and a surface roughness of 100 nm or less.
US08471455B2
A fluorescent lamp includes a discharge tube and an auxiliary amalgam assembly held in the discharge tube by a holder. The holder has first and second regions with attaching portions adapted to receive an associated attachment member. The holder has a first dimension prior to disposition in the discharge tube.
US08471451B2
A ruthenium-based electrode material for use with a spark plug. The electrode material comprises ruthenium (Ru) and a precious metal. The ruthenium (Ru) is the single largest constituent of the electrode material on a wt % basis. The electrode material may have a density that is less than or equal to about 15.5 g/cm3 and may include at least one other precious metal. The electrode material may be used in a spark plug that includes a metallic shell having an axial bore, an insulator having an axial bore and at least partially disposed within the axial bore of the metallic shell, a center electrode at least partially disposed within the axial bore of the insulator, and a ground electrode attached to a free end of the metallic shell. The center electrode, the ground electrode or both may be formed at least in part from the electrode alloy.
US08471442B2
Disclosed is a piezoelectric ceramic which is characterized by containing [K1-xNax]1-yLiy[Nb1-z-wTazSbw]O3 (wherein x, y, z and w each represents a molar ratio and satisfies 0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦w≦1) as the main phase and K3Nb3O6Si2O7 as a sub-phase, while containing, as an additive, a Cu compound in an amount of 0.02-5.0 mol in terms of CuO relative to 100 mol of the main phase.
US08471438B2
An actuator with a sensor, including an actuator having electrodes and an ionic conduction layer, a sensor and a rigid body member provided in contact with the sensor. The actuator is connected to the sensor through the rigid body member such that the sensor is not deformed attending on deformation of the actuator.
US08471437B2
A piezoelectric component includes an electromechanical transducer with two first electrodes and a second electrode. The second electrode is arranged between the two first electrodes. The transducer also includes a first main side, a second main side, opposite from the first main side, and a first longitudinal side. A first contiguous metallization layer is arranged on a first partial region of the first main side and on a partial region of the first longitudinal side adjacent to the first partial region of the first main side. Here, the partial region of the first longitudinal side is kept at a sufficient distance from a side edge facing the second main side and the partial region electrically contacts the at least two first electrodes.
US08471430B2
An electric motor includes a stator and a rotor rotatably installed in the stator. The stator has a stator core and windings. The stator core has a yoke and a plurality of teeth extending inwardly from the yoke. The stator includes two end caps disposed at opposite axial ends thereof and a plurality of locking members securing the end caps to the stator core. The windings are wound on the respective teeth, and the locking members extend between the end caps through gaps formed between adjacent teeth.
US08471429B2
A stator assembly includes a stator stack and a plurality of conductors extending from the stator stack. An isolator/assembly ring is located on the stator stack. The isolator/assembly ring includes a plurality of inwardly protruding fingers. A method of assembling the stator assembly includes threading the plurality of conductors through the stator stack such that each of the plurality of fingers on the isolator/assembly ring is located between respective ones of the plurality of conductors.
US08471428B2
A rotating electrical machine includes a rotor, in which a plurality of magnetic poles are provided in circumferential direction, and a stator, within which the rotor is disposed. In the stator, two stator magnetic poles are formed by winding coils of one phase and by a stator core of the stator within 360° of electrical angle defined by the magnetic poles of the rotor. The coils that form respective stator magnetic poles have angular widths in circumferential direction of less than 180° of electrical angle, the coils that form the respective two stator magnetic poles are provided so as not to mutually overlap and are wound so that adjacent ones of the stator magnetic poles have mutually opposite polarities, and, in the stator, each winding of each coil consists of an external bridge wire, a turn portion, an internal bridge wire, and a turn portion, in that order.
US08471426B2
Machines and motors with multiple three-phase AC power connections. A motor includes first, second, and third windings arranged to drive a rotator shaft. A first end of each winding is connected to a respective power input of a three-phase alternating current (AC) power source and a second end of each winding is connected to a neutral. The motor includes at least one intermediate tap connected to each of the first, second, and third windings at substantially equal respective distances between the neutral and the respective power inputs. The intermediate taps together provide a three-phase AC power output at a voltage that is less than the voltage of the three-phase AC power source.
US08471419B2
The present invention relates to a rotating electric machine stator that includes connecting members for connecting jumper wires to each other between neighboring magnetic pole coils of the rotating electric machine stator, and its manufacturing method. In a conventional connecting member, its portions to be connected to the jumper wires are figure-U shaped and have openings on the opposite side to a core's end-face where the jumper wires are disposed, so that, in order to insert the jumper wires into the openings, complex drive controls have been required for the connecting portions being figure-U shaped. In order to simplify the drive controls, such connecting portions being made in curved shapes have openings each facing the end-face of a core. It is possible to generally apply the present invention to rotating electric machine stators that obey coil connection specifications.
US08471417B2
An inverter input terminal, a coil terminal for a U-phase coil, and an inverter ground terminal are arranged in this order and neighboring to one another to form a U-phase terminal group. An inverter input terminal, a coil terminal for a V-phase coil, and the inverter ground terminal are arranged in this order and neighboring to one another to forma V-phase terminal group. The inverter input terminal, a coil terminal for a W-phase coil, and an inverter ground terminal are arranged in this order and neighboring to one another to form a W-phase terminal group. Flow directions of electric current in the neighboring terminals are opposite to each other, so that inductance of inverter circuits can be decreased.
US08471414B2
A low impedance polarity conversion circuit for driving a load with a DC power source is disclosed. The DC power source has a first pole from which a first DC signal originates and a second pole from which a second DC signal originates. The first DC signal has a voltage greater than a voltage of the second DC signal. The conversion circuit includes a circuit output node through which an output DC signal is delivered from the conversion circuit to the load. The conversion circuit also includes a charge conditioning circuit for generating third and fourth DC signals. The third DC signal has a voltage greater than the first DC signal voltage and the fourth DC signal has a voltage less than the second DC signal voltage. A rectification circuit includes first and second inputs for attachment to the first pole and the second pole. A Field-Effect Transistor (FET) bridge is electrically connected to the first and second inputs. The FET bridge includes first and second pairs of cooperating FETs. The third voltage controls a first of the first pair of FETs and a first of the second pair of FETs. The fourth voltage controls a second of the first pair of FETs and a second of the second pair of FETs. The FET bridge is for rectifying the first and second DC signals in order that the output DC signal is the same polarity irrespective of whether the first input is attached to the first pole or the second pole.
US08471407B2
An emergency power system for operation during loss of power on power mains comprises a spring-driven energy storage unit (ESU) and a generator. The ESU enters a generator mode responsive to a power outage state of a power sensor, during which mode unwinding of the spring drive powers the generator. After power is restored to the mains, a preferred embodiment automatically rewinds the spring using the generator as a motor.
US08471393B2
A semiconductor component includes a semiconductor chip, and a passive component, with the semiconductor component including a coil as the passive component. The semiconductor chip and the passive component are embedded in a plastic encapsulation compound with connection elements to external contacts.
US08471384B2
A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.
US08471381B2
A complete power management system implemented in a single surface mount package. The system may be drawn to a DC to DC converter system and includes, in a leadless surface mount package, a driver/controller, a MOSFET transistor, passive components (e.g., inductor, capacitor, resistor), and optionally a diode. The MOSFET transistor may be replaced with an insulated gate bipolar transistor, IGBT in various embodiments. The system may also be a power management system, a smart power module or a motion control system. The passive components may be connected between the leadframe connections. The active components may be coupled to the leadframe using metal clip bonding techniques. In one embodiment, an exposed metal bottom may act as an effective heat sink.
US08471372B2
A thin flip chip package structure comprises a substrate, a chip and a heat dissipation paste, wherein the substrate comprises an insulating layer and a trace layer. The insulating layer comprises a first insulating portion and a second insulating portion, the first insulating portion comprises a first upward surface, a first downward surface, a first thickness and a recess formed on the first downward surface, wherein the recess comprises a bottom surface. The second insulating portion comprises a second upward surface, a second downward surface and a second thickness larger than the first thickness. The trace layer is at least formed on the second insulating portion, the chip disposed on top of the substrate is electrically connected with the trace layer and comprises a plurality of bumps, and the heat dissipation paste is disposed at the recess.
US08471371B2
A semiconductor composite wiring assembly includes a wiring assembly and a lead frame. A copper wiring layer of the wiring assembly includes first terminals, second terminals, and wiring sections connecting the terminals. The second terminals and the lead frame are electrically connected by connecting members. The lead frame includes a die pad for mounting the wiring assembly, and lead sections located at outer positions. The die pad includes a central area in which a semiconductor chip is mounted via the wiring assembly, and a peripheral area connected to the central area with spaces formed therebetween that serve as resin-seal inflow spaces. The wiring assembly is positioned over the central area and the peripheral area so as to cover the central area completely and the peripheral area partially, and at least the central area and the peripheral area of the die pad are glued to the wiring assembly by resin paste.
US08471368B2
This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.
US08471367B2
A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer (H) and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.
US08471366B2
A nitride semiconductor device includes a main surface and an indicator portion. The main surface is a plane inclined by at least 71° and at most 79° in a [1-100] direction from a (0001) plane or a plane inclined by at least 71° and at most 79° in a [−1100] direction from a (000-1) plane. The indicator portion indicates a (−1017) plane, a (10-1-7) plane, or a plane inclined by at least −4° and at most 4° in the [1-100] direction from these planes and inclined by at least −0.5° and at most 0.5° in a direction orthogonal to the [1-100] direction.
US08471364B2
A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×1010 atoms/cm2 to 200×1010 atoms/cm2 of a p-type metal element. The group III nitride substrate has a stable surface.
US08471363B2
A semiconductor device includes a substrate, a first single conductor, a single insulator, and a second single conductor. The substrate includes first and second regions located adjacent to each other. The first region has blind holes, each of which has an opening on a front surface of the substrate. The second region has a through hole penetrating the substrate. A width of each blind hole is less than a width of the through hole. The first single conductor is formed on the front surface of the substrate in such a manner that an inner surface of each blind hole and an inner surface of the through hole are covered with the first single conductor. The single insulator is formed on the first single conductor. The second single conductor is formed on the single insulator and electrically insulated form the first single conductor.
US08471362B2
A three-dimensional (3D) semiconductor device including a plurality of stacked layers and a through-silicon via (TSV) electrically connecting the plurality of layers, in which in signal transmission among the plurality of layers, the TSV transmits a signal that swings in a range from an offset voltage that is higher than a ground voltage to a power voltage, thereby minimizing an influence of a metal-oxide-semiconductor (MOS) capacitance of TSV.
US08471361B2
An integrated chip package structure and method of manufacturing the same is by adhering dies on an organic substrate and forming a thin-film circuit layer on top of the dies and the organic substrate. Wherein the thin-film circuit layer has an external circuitry, which is electrically connected to the metal pads of the dies, that extends to a region outside the active surface of the dies for fanning out the metal pads of the dies. Furthermore, a plurality of active devices and an internal circuitry is located on the active surface of the dies. Signal for the active devices are transmitted through the internal circuitry to the external circuitry and from the external circuitry through the internal circuitry back to other active devices. Moreover, the chip package structure allows multiple dies with different functions to be packaged into an integrated package and electrically connecting the dies by the external circuitry.
US08471357B2
This invention provides an integrated inductor structure including a substrate, a metal coil layer on the substrate and a dielectric layer between the substrate and the metal coil layer. A well shielding structure for reducing eddy current is disposed in the substrate under the metal coil layer. The well shielding structure is chequered with a plurality of N wells and a plurality of P wells. The N wells and P wells are arranged in a chessboard-like manner. A P+ pickup ring is provided in the substrate to encompass the well shielding structure. A guard ring is formed directly on the P+ pickup ring.
US08471354B2
An e-fuse structure includes an anode, a cathode, a fuse part connecting the anode and the cathode to each other, and a dielectric contacting the fuse part. The dielectric is configured to apply a stress to the fuse part, where the stress constructively acting on a migration effect of atoms constituting the fuse part. The migration effect is generated by electromigration and thermomirgration.
US08471350B2
A very high transmittance, back-illuminated, silicon-on-thin sapphire-on-fused silica wafer substrate design is presented for enabling high quantum efficiency and high resolution, silicon or silicon-germanium avalanche photodiode detector arrays with improved indirect optical crosstalk suppression. The wafer substrate incorporates a stacked antireflective bilayer between the sapphire and silicon, comprised of single crystal aluminum nitride (AlN) and non-stoichiometric, silicon rich, amorphous silicon nitride (a-SiNX<1.33), as well as a one quarter wavelength, magnesium fluoride (λ/4-MgF2) back-side antireflective layer which is bonded to a fused silica wafer. The fused silica provides mechanical support, allowing the sapphire to be thinned to optimal thickness below 50 μm, for improved optical transmittance and in conjunction with monolithic sapphire microlenses, suppression of indirect optical crosstalk from multiple reflections of APD emitted light. After solid-state device fabrication, the silicon can be coated with photoresist and the fused silica dissolved in buffered hydrogen fluoride (HF) to recover the thin Si—(AlN/a-SiNX<1.33)-sapphire-(MgF2).
US08471343B2
The instant disclosure relates to MOSFET semiconductor structures exhibiting a reduced parasitic capacitance, as well as methods of making the MOSFET semiconductor structures. The MOSFET semiconductor structures of the instant disclosure comprise an air-gap interlayer dielectric material between the contacts to the source/drain and gate structures and gate stack structures. The air-gap interlayer dielectric material causes the MOSFET semiconductor structures of the instant disclosure to have a reduced parasitic capacitance.
US08471339B2
A semiconductor device comprises a device isolation pattern, an active region, a gate pattern, a first source/drain region, and a first barrier region. The device isolation pattern defines an active portion in a semiconductor substrate and the active portion comprises first and second sidewalls extending in a first direction and doped with a first conductive type dopant. The gate pattern extends in a second direction perpendicular to the first direction to cross over the active portion. The first source/drain region and the first barrier region are disposed in the active portion at one side of the gate pattern. The first barrier region is disposed between the first source/drain region and the first sidewall and contacts the first sidewall. The first barrier region is doped with the first conductive type dopant and the first source/drain region is doped with a second conductive type dopant.
US08471335B2
A semiconductor structure includes a semiconductor substrate, formed on which are a first layer and a second layer, and an alignment-control mask. The alignment-control mask includes a first direction reference element, formed in a first region of the first layer and extending in a first alignment direction, and first position reference elements, formed in a first region of the second layer that corresponds to the first region of the first layer accommodating the first direction reference element. The first position reference elements are arranged in succession in the first alignment direction and in respective staggered positions with respect to a second alignment direction perpendicular to the first alignment direction.
US08471328B2
A manufacturing method of a non-volatile memory is disclosed. A gate structure is formed on a substrate and includes a gate dielectric layer and a gate conductive layer. The gate dielectric layer is partly removed, thereby a symmetrical opening is formed among the gate conductive layer, the substrate and the gate dielectric layer, and a cavity is formed on end sides of the gate dielectric layer. A first oxide layer is formed on a sidewall and bottom of the gate conductive layer, and a second oxide layer is formed on a surface of the substrate. A nitride material layer is formed covering the gate structure, the first and second oxide layer and the substrate and filling the opening. An etching process is performed to partly remove the nitride material layer, thereby a nitride layer is formed on a sidewall of the gate conductive layer and extending into the opening.
US08471321B2
A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to extend from the memory cell region to the peripheral circuit region. A capacitor lower electrode assembly is formed in the memory cell region to upwardly extend to substantially the same height as the upper surface of the insulating film on the major surface of the semiconductor substrate. Additionally, the lower electrode assembly includes first and second lower electrodes that are adjacent through the insulating film. A capacitor upper electrode is formed on the capacitor lower electrode through a dielectric film, to extend onto the upper surface of the insulating film. The capacitor lower electrode includes a capacitor lower electrode part having a top surface and a bottom surface. A semiconductor device organized as just described, permits implementation having a high density of integration while ensuring the capacitor exhibits high reliability and a constant capacitance.
US08471319B2
A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a gate insulating film formed above the semiconductor substrate; a charge storage layer formed above the gate insulating film; a multilayered interelectrode insulating film formed in a first region above an upper surface portion of the element isolation insulating film, a second region above a sidewall portion of the charge storage layer and a third region above an upper surface portion of the charge storage layer, the interelectrode insulating film including a stack of an upper silicon oxide film, a middle silicon nitride film, and a lower silicon oxide film; a control gate electrode formed above the interelectrode insulating film; wherein the middle silicon nitride film is thinner in the third region than in the second region and the upper silicon oxide film is thicker in the third region than in the second region.
US08471318B2
A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a plurality of bit lines having a uniform width on a semiconductor substrate, an active region obliquely arranged to have a predetermined angle with respect to the bit lines, a spacer arranged around the bit lines connected to a center part of the active region. A contact pad is connected to a lower part of the bit lines. The spacer is formed not only at an upper part of sidewalls of the contact pad but also at sidewalls of the bit lines. As a result, a CD of the bit line contact increases, so that a bit line contact patterning margin also increases. A bit line pattern having a uniform width is formed so that a patterning margin increases. A storage electrode contact self-alignment margin increases so that a line-type storage electrode contact margin increases.
US08471315B1
The invention describes a solid-state CMOS image sensor array and in particular describes in detail image sensor array pixels having global and rolling shutter capabilities that are using a dual channel transfer-storage gate for charge transfer from a PD to a TX gate well and from the TX gate well onto a FD. The dual channels are stacked above each other where a shallow charge channel is used to drain surface generated dark current away from the pixel structure, while a buried bulk channel provides for standard charge transfer and storage functions. This feature thus improves the sensor noise performance and prevents signal contamination and various shading effects caused by the dark current buildup during a prolonged charge storage sequence in pixels of image sensor arrays using the global shutter mode of operation. Several embodiment of this concept are described including pixels which utilize shared circuitry, a complete PD reset capability, and an efficient anti-blooming control.
US08471308B2
Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.
US08471306B2
A double-sided integrated circuit chips, methods of fabricating the double-sided integrated circuit chips and design structures for double-sided integrated circuit chips. The method includes removing the backside silicon from two silicon-on-insulator wafers having devices fabricated therein and bonding them back to back utilizing the buried oxide layers. Contacts are then formed in the upper wafer to devices in the lower wafer and wiring levels are formed on the upper wafer. The lower wafer may include wiring levels. The lower wafer may include landing pads for the contacts. Contacts to the silicon layer of the lower wafer may be silicided.
US08471298B2
Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
US08471295B2
A flash memory cell string and a method of fabricating the same are provided. The flash memory cell string includes a plurality of cell devices and switching devices connected to ends of the cell devices. Each of the cell devices includes a semiconductor substrate, a tunneling insulating layer, a charge storage node, a control insulating layer, and a control electrode which are sequentially laminated on the semiconductor substrate. In each cell device, a source/drain region is not formed. The switching device does not include a source or drain region in a side connected to the cell devices. The switching device includes a source or drain region in the other side that is not connected to the cell devices. The source or drain region does or does not overlap the control electrode. Accordingly, it is possible to improve a miniaturization property and performance of NAND flash memory cell devices. If necessary, it is possible to electrically connect cells or cell strings by inducing an inversion layer through a fringing electric field from a control electrode.
US08471293B2
An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.
US08471283B2
A white LED lamp including: a conductive portion; a light emitting diode chip mounted on the conductive portion, for emitting a primary light having a peak wavelength of 360 nm to 420 nm; a transparent resin layer including a first hardened transparent resin, for sealing the light emitting diode chip; and a phosphor layer covering the transparent resin layer, the phosphor layer being formed by dispersing a phosphor powder into a second hardened transparent resin, and the phosphor powder receiving the primary light and radiating a secondary light having a wavelength longer than that of the primary light. An energy of the primary light contained in the radiated secondary light is 0.4 mW/lm or less. In the white LED lamp, a backlight, and an illumination device using the white LED lamp an amount of UV light to be contained in the released light and an amount of heat to be generated from the lamp are decreased to be small.
US08471281B2
A side-emitting light emitting device (100) is provided, comprising at least one light emitting diode (101) arranged on a substrate (102) and facing a scattering reflector (103, 109) disposed at a distance from and extending along the extension of said substrate. The reflector comprises a plurality of non-parallel oriented reflective flakes (112) distributed in a transmissive carrier (113), such that light incident thereon from any angle of incidence is reflected and scattered. The scattering action of the reflector gives rise to an angular redistribution in the device, which increases the chance of light exiting the device through lateral openings between the reflector and the substrate, while the opacity of the reflector prevents light from being emitted through the top surface.
US08471280B2
In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO2 to increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.
US08471279B2
A nano/micro-sized diode and a method of preparing the same, the diode including: a first electrode; a second electrode; and a diode layer that is disposed between the first electrode and the second electrode. The diode layer includes a first layer and a second layer. The first layer is disposed on the first electrode and has a first surface that is electrically connected to the first electrode, and an opposing second surface that has a protrusion. The second layer is disposed between the first layer and the second electrode and has a first surface having a recess that corresponds to the protrusion, and an opposing second surface that is electrically connected to the second electrode.
US08471271B2
Provided is a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes a package main body with a cavity, a plurality of light emitting diode chips, a wire, and a plurality of lead frames. The plurality of light emitting diode chips are mounted in the cavity. The wire is connected to an electrode of at least one light emitting diode chip. The plurality of lead frames are formed in the cavity, and at least one lead frame is electrically connected to the light emitting diode chip or a plurality of wires.
US08471262B2
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
US08471251B2
There is provided an electroactive material having Formula I wherein: Q is the same or different at each occurrence and can be O, S, Se, Te, NR, SO, SO2, or SiR3; R is the same or different at each occurrence and can be hydrogen, alkyl, aryl, alkenyl, or alkynyl; R1 through R8 are the same or different and can be hydrogen, alkyl, aryl, halogen, hydroxyl, aryloxy, alkoxy, alkenyl, alkynyl, amino, alkylthio, phosphino, silyl, —COR, —COOR, —PO3R2, —OPO3R2, or CN.
US08471250B2
A display apparatus includes an organic electroluminescence (OEL) device and a color filter. At different correlated color temperatures (CCTs), a light emitting spectrum of the OEL device is adjusted to meet specific display requirements and improve the display quality of the display apparatus. In addition, a light filtering spectrum of the color filter is adjusted simultaneously to match the light emitting spectrum of the OEL device, so that the display apparatus has an excellent display effect.
US08471249B2
Carbon transistor devices having channels formed from carbon nanostructures, such as carbon nanotubes or graphene, and having charged monolayers to reduce parasitic resistance in un-gated regions of the channels, and methods for fabricating carbon transistor devices having charged monolayers to reduce parasitic resistance. For example, a carbon field effect transistor includes a channel comprising a carbon nanostructure formed on an insulating layer, a gate structure formed on the channel, a monolayer of DNA conformally covering the gate structure and a portion of the channel adjacent the gate structure, an insulating spacer conformally formed on the monolayer of DNA, and source and drain contacts connected by the channel.
US08471247B2
There is provided an organic light-emitting diode luminaire. The luminaire includes a patterned first electrode, a second electrode, and a light-emitting layer therebetween. The light-emitting layer includes a first plurality of pixels having an emission color that is blue; a second plurality of pixels having an emission color that is green, the second plurality of pixels being laterally spaced from the first plurality of pixels; and a third plurality of pixels having an emission color that is red, the third plurality of pixels being laterally spaced from the first and second pluralities of pixels.The additive mixing of all the emitted colors results in an overall emission of white light.
US08471243B1
Radiation-emitting semiconductor devices include a first base region comprising an n-type III-V semiconductor material, a second base region comprising a p-type III-V semiconductor material, and a multi-quantum well structure disposed between the first base region and the second base region. The multi-quantum well structure includes at least three quantum well regions and at least two barrier regions. An electron hole energy barrier between a third of the quantum well regions and a second of the quantum well regions is less than an electron hole energy barrier between the second of the quantum well regions and a first of the quantum well regions. Methods of forming such devices include sequentially epitaxially depositing layers of such a multi-quantum well structure, and selecting a composition and configuration of the layers such that the electron hole energy barriers vary across the multi-quantum well structure.
US08471238B2
Light emitters using nanotubes and methods of making same. A light emitter includes a nanotube article in electrical communication with a first and a second contact, a substrate having a predefined region with a relatively low thermal conductivity said region in predefined physical relation to said nanotube article; and a stimulus circuit in electrical communication with the first and second contacts. The stimulus circuit provides electrical stimulation sufficient to induce light emission from the nanotube article in the proximity of the predefined region. The predefined region is a channel formed in the substrate or a region of material with relatively low thermal conductivity. The light emitter can be integrated with semiconductor circuits including CMOS circuits. The light emitter can be integrated into optical driver circuits (on- and off-chip drivers) and opto-isolators.
US08471236B2
A phase change memory cell having a flat lower bottom electrode and a method for fabricating the same. The method includes forming a dielectric layer over a substrate including an array of conductive contacts, patterning, a via having a low aspect ratio such that a depth of the via is less than a width thereof, to a contact surface of the substrate corresponding to each of the array of conductive contacts to be connected to access circuitry, etching the dielectric layer and depositing electrode material over the etched dielectric layer and within each via, and planarizing the electrode material to form a plurality of lower bottom electrodes on each of the conductive contacts.
US08471228B2
The invention concerns a method for irradiating a target with a beam approaching target points, involving the following steps: Measuring at least one of the parameters relating to the position of the beam and the intensity of the beam, changing the beam as a function of the at least one measured parameter, particularly as a function of a variance relating to the at least one measured parameter. The method is characterized in that the at least one measured parameter is measured at the most once per target point. Furthermore, the invention concerns a device for irradiating a target in accordance with the invention-based method and a control system for controlling such a device.
US08471226B2
An EUV (Extreme Ultra Violet) light source device ionizes a target material in an ionizer, and supplies the ionized target material to a point of generating a plasma. This reduces the generation of debris. The ionizer simultaneously irradiates laser beams of plural wavelengths corresponding to the excited level of tin on a target material to ionize the target material. The ionized target material is extracted from the ionizer with a high voltage applied from an ion beam extractor, and accelerated and supplied to a plasma generation chamber. When driver laser beam is irradiated on the ionized target material, a plasma is generated, thereby emitting EUV radiation.
US08471224B2
A path of a particle beam is determined through a 3D planning treatment volume (PTV), wherein the PTV includes a set of slices in a depth order, and each slice includes a set of locations. For each slice, the set of locations are grouped into a set of lines along a selected direction, wherein each line is a straight line and includes a starting location and an ending location, and each line is connected to one or two other lines, and the connecting connects two lines to either the starting location or the ending location of the lines to form a tour, and the tours are connected through the slices in the depth order to form the path of the particle beam.
US08471212B2
In this radiography device, the radiation conversion panel side of a scintillator is formed in a convex shape towards the radiation conversion panel, the end portions of columnar crystals are formed at said side, and the end portions of the columnar crystals can contact the radiation conversion panel.
US08471206B1
Systems and methods are directed to determining the vacuum integrity within a vacuum package assembly containing an infrared detector, such as within an infrared imaging device. For example for an embodiment, a method of performing a vacuum pressure test on a vacuum package includes changing a first parameter value associated with an infrared detector within the vacuum package to vary a temperature of the infrared detector; measuring a second parameter value associated with the infrared detector based on the changing of the first parameter value; comparing the second parameter value to a threshold value; and determining a vacuum pressure condition of the vacuum package based on the comparing of the second parameter value to the threshold value.
US08471204B2
In one embodiment, a dual-band focal plane array includes a readout circuit (ROIC), and a plurality of electro-optical (EO) polymer pixels for absorbing visible and/or short wave infrared (SWIR) radiation, each of the EO polymer pixels electrically coupled to the ROIC. The detector further includes a plurality of microbolometers for detecting long wave infrared (LWIR) radiation, each microbolometer electrically coupled to the ROIC via contact legs disposed between adjacent microbolometers and between adjacent EO polymer pixels. A method of fabricating a focal plane array is also provided.
US08471202B2
A method for producing a representation of an object using a particle beam, as well as a particle beam device for carrying out the method are disclosed. The system described herein is based on the object of specifying the method and the particle beam device for producing a representation of an object such that images which are produced, in particular including FFT images, are as free as possible of artifacts which are not caused by the object to be examined. This is achieved in particular in that pixel lives, line flyback times and pixel pause times are varied in raster patterns.
US08471184B2
Various blanks and constructs formed therefrom are provided. The various constructs include features for supporting a food item at an elevated position to enhance the heating, browning, and/or crisping of the food item in a microwave oven.
US08471182B2
The present invention relates to a system and method for automated or “robotic” application of hardfacing to the surface of a steel-toothed cutter of a standard earth-boring rock bit or a hybrid-type rock bit. In particular, the system incorporates a grounded adapter plate and chuck mounted to a robotic arm for grasping and manipulating a rock bit cutter, particularly a hybrid rock bit cutter, beneath an electrical or photonic energy welding source, such as a plasma arc welding torch manipulated by a positioner. In this configuration, the torch is positioned substantially vertically and oscillated along a horizontal axis as the cutter is manipulated relative along a target path for the distribution of hardfacing. Moving the cutter beneath the torch allows more areas of more teeth to be overlayed, and allows superior placement for operational feedback, such as automatic positioning and parameter correction. In the preferred embodiment, sensors provide data to the control system for identification, positioning, welding program selection, and welding program correction. The control system, aided by data from the sensors, manipulates the robotically held cutter while controlling the operation and oscillation of the torch. These systems and methods can be applied to hardfacing steel teeth of the rolling cutters of both standard tri-cone or di-cone type rolling cone bits, as well as to hybrid-type earth boring drill bits.
US08471180B2
The invention relates to a glow plug comprising a housing in which an inner conductor is disposed, a metal sleeve which is inserted into the housing, and a ceramic glow pin which is disposed in the metal sleeve, wherein the two ends of the glow pin protrude from the metal sleeve and the rear end of the pin is connected to the inner conductor, and wherein the metal sleeve has a tapering section at the rear end, the section enclosing a tapering section of the glow pin. According to the invention, the glow pin is pressed into the metal sleeve. The invention further relates to a method for connecting a pin made of functional ceramic to a metal sleeve.
US08471173B2
The invention relates to a method for welding coated sheet metal (3), which comprises at least one laser (13) and at least one shielded arc unit (5) and a rod feeding device (11) for a welding rod (12). The aim of the invention is to provide a method or a device of the aforementioned kind which allows fo˜ reducing or completely avoiding inclusions such as are e.g. caused by the evaporation of the coating of the metal sheet (3). For this purpose, a clamping device (6) is used for positioning the coated metal sheet (3) without substantial gaps between the individual sheets. A material having a zinc and/or carbon and/or aluminum content is used as the weld metal or welding rod (12).
US08471172B2
A method of selectively eliminating electrical shorts and other electrical defects from specific layers of a multilayer electronic device without damaging underlying layers. The method is based on a combination of an automated detection of the defects and selective laser ablation patterning (SLAP).
US08471169B2
Provided is an electrode (1) which has a double structure including Cu or a Cu alloy as an electrode body (2) and a core material (3) made of W, Mo, a W-based alloy, or a Mo-based alloy embedded in a surface of the electrode body (2) which is abutted against a material to be welded, the core material (3) being formed by using W, Mo, the W-based alloy, or the Mo-based alloy which is in the form of a fibrous structure extended by sintering, swaging, and annealing in an electrode axis direction, the fibrous structure having a horizontal cross-sectional average particle diameter of 50 μm or more and an aspect ratio of 1.5 or more. The electrode (1) can be used as an inexpensive electrode obtained by suppressing particle dropping/attrition and defects in electrodes for spot welding, in which heat and pressure are applied repeatedly, stably enhancing durability.
US08471167B2
A rough machining method for machining a channel in a workpiece includes the steps of: provide a power supply to energize one of a workpiece and an electrode as an anode and the other as a cathode; advance the electrode into the workpiece from a first start point to travel a first toolpath, so as to generate a first annular groove with a first core connecting with the workpiece; advance the electrode into the workpiece from a second start point to travel a second toolpath, so as to generate a second annular groove with a second core connecting with the workpiece, wherein the second annular groove intersects with the first annular groove and the first and the second cores are at least partially broken and disconnected with the workpiece upon intersecting of the first and the second annular grooves; and circulating a cutting fluid cross a working gap between a working face of the electrode and the workpiece.
US08471155B2
In a method and apparatus for fabricating a semiconductor device having a flexible tape substrate, a hole is punched in the flexible tape substrate. The flexible tape substrate includes a metal layer attached to a polyimide layer without an adhesive there between. A cover is placed on the metal layer to cap a base of the hole. A metal is deposited on the cover exposed at the base of the hole, the metal being used to form a bond with the metal layer. The metal being deposited causes the hole to be plugged up to a selective height. Upon removal of the cover, the metal may also be deposited on the metal layer to increase a thickness of the metal layer.
US08471154B1
A stackable variable height via package includes a substrate having a first surface and terminals thereon. The terminals include a first terminal and a second terminal. Vias are on the terminals, the vias including a first via on the first terminal and a second via on the second terminal. The first via has a height from the first surface of the substrate less than a height of the second via from the first surface of the substrate. The package further includes a package body and via apertures in the package body to expose the vias. Forming the stackable variable height via package with variable height vias readily accommodate stacking of additional packages having different types of terminals, e.g., LGA and BGA type packages, as well as variable degrees of warpage on the stackable variable height via package. Further, the vias are formed with a minimum pitch.
US08471144B2
An adapter box for the protection of the electrical connection of a photovoltaic module is attachable by form-fit to an electrical junction box of the photovoltaic module. At least one side of the adapter box comprises openings for inserting protective conduits in which cables run through for being connected to electrical connectors of the junction box, the adapter box further comprising at least one opening for said connectors.
US08471138B2
Touch sensitive musical instruments are described herein including embodiments having: one-sided capacitive touch sensors with conductive ground planes, one-sided capacitive touch sensors with air gaps, one-sided capacitive touch sensors with separating material, and/or one-sided capacitive touch sensors including a combination of conductive ground planes, air gaps, and/or separating material. Embodiments of touch sensitive musical instruments simulating string instruments such as guitars are described.
US08471128B2
According to the invention, there is provided seed and plants of the corn variety designated CV547369. The invention thus relates to the plants, seeds and tissue cultures of the variety CV547369, and to methods for producing a corn plant produced by crossing a corn plant of variety CV547369 with itself or with another corn plant, such as a plant of another variety. The invention further relates to corn seeds and plants produced by crossing plants of variety CV547369 with plants of another variety, such as another inbred line. The invention further relates to the inbred and hybrid genetic complements of plants of variety CV547369.
US08471118B2
According to the invention, there is provided seed and plants of the hybrid corn variety designated CH020602. The invention thus relates to the plants, seeds and tissue cultures of the variety CH020602, and to methods for producing a corn plant produced by crossing a corn plant of variety CH020602 with itself or with another corn plant, such as a plant of another variety. The invention further relates to genetic complements of plants of variety CH020602.
US08471115B1
A novel maize variety designated PHEJP and seed, plants and plant parts thereof. Methods for producing a maize plant that comprise crossing maize variety PHEJP with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into PHEJP through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. Hybrid maize seed, plant or plant part produced by crossing the variety PHEJP or a trait conversion of PHEJP with another maize variety. Inbred maize varieties derived from maize variety PHEJP, methods for producing other inbred maize varieties derived from maize variety PHEJP and the inbred maize varieties and their parts derived by the use of those methods.
US08471087B2
Disclosed is a process for separating an acidic contaminant and light hydrocarbon of a light hydrocarbon feed having a large contaminating acidic contaminant content. Among other features, the process uses a combination of distillation and membrane separation arranged in a unique way to yield a high-purity light hydrocarbon product and a high-purity acidic contaminant product.
US08471079B2
A process for producing a fuel or fuel blending component from co-processing at least two different classes of renewable feedstocks, is presented. One feedstock comprises glycerides and free fatty acids in feedstocks such as plant and animal oils while the other feedstock comprises biomass derived pyrolysis oil. The source of the animal or plant oil and the biomass may be the same renewable source.
US08471078B2
A method of providing a blend of tetra- and/or pentafluoroalkanes comprising hydrogenating a pentafluoropropene.
US08471068B2
Solid acid catalyst such as acid activated-Montmorillonite clay composite has been developed by modifying the Na-Montmorillonite clay with acid (HCl) treatment for different periods such as 5 minutes to about 4 hours and activating at about 120° C. for about 2 hours. Friedel Crafts alkylation reaction between phenol and 4-hydroxybutan-2-one in presence of the acid activated Montmorillonite clay catalysts exhibiting layered clay structures (basal spacing d001 ranging from about 10 to 13.5 Å), high surface area (250-400 m2/g), highly porous {micropores in the range 5 to 15 Å and mesopores in the range 30 to 80 Å}, average pore volume 0.2 to 0.65 cc/g, and surface acidity in the range 0.4-0.6 mmol/g; under constant stirring and at pressure of 1-15 bar, temperature 100-150° C. for a period of about 12-24 hours produces 4-(4-hydroxyphenyl)butan-2-one (Raspberry ketone) exhibiting conversion about 35-55% and high selectivity in the range 75-81%.
US08471062B2
Method for purifying lactic acid by crystallization in one or a plurality of steps, characterized in that crystals are formed from an impure aqueous lactic acid solution having a color of >500 Hazen, at a concentration between 85 and 95% by controlling the lactic acid oligomer content expressed in terms of a relative monomer content greater than 80% and controlling the degree of supersaturation of the solution between 1 and 60% in order to obtain lactic acid crystals having a specific surface area by mass of <0.05 m2/g.
US08471060B2
A process and reactor for the production of acetic acid comprising the steps of: passing a feed stream containing ethanol and water together with a predetermined feed rate of an oxygen containing atmosphere in presence of one or more catalysts being active in simultaneous non-oxidative and oxidative conversion of ethanol to a product stream with acetic acid; recovering from the product stream a stream of acetic acid; optionally recovering reactive derivatives of acetic acid and recycling these to step (a).
US08471056B2
To provide a fluorinated compound having an RF group with at most 6 carbon atoms, whereby a fluorinated polymer having a highly durable water/oil repellency can be produced, and an environmental load is little, and a fluorinated polymer and a fluorinated copolymer having a highly durable water/oil repellency and presenting little environmental load, obtainable by polymerizing such a fluorinated compound. A fluorinated compound represented by the following formula (I) and its polymer: CH2═C(M)COO(CH2)nPhCOO(CH2)mCrF2r+1 (I) (in the formula (I), M is a hydrogen atom, a methyl group or a halogen atom, n is an integer of from 0 to 2, Ph is a phenylene group, m is an integer of from 1 to 4, and r is an integer of from 1 to 6).
US08471055B2
The present invention relates to photo-crosslinkable liquid crystal monomers with optical activity. The liquid crystal monomers contains one chiral center with an acrylate group or terminal diacrylate groups, and terminal dibenzene rings are introduced in order to extend its hard segment for the purpose of getting a wider liquid crystalline phase. By introducing the liquid crystal monomers, the room temperature nematic liquid crystal or the cholesteric liquid crystal may have a better mutual solubility and a wider, steadier structure of liquid crystal. The liquid crystal monomers have the following formula structure:
US08471048B2
The present invention relates to a ruthenium carbonyl complex that is represented by the following Formula (1): RuXY(CO)(L) (1) (in the Formula (1), X and Y, which may be the same or different from each other, represent an anionic ligand and L represents a tridentate aminodiphosphine ligand which has two phosphino groups and a —NH— group), its production method, and a method for production of alcohols by hydrogenation-reduction of ketones, esters, and lactones using the complex as a catalyst.The ruthenium carbonyl complex of the invention has a high catalytic activity and it can be easily prepared and handled.
US08471046B2
A process is claimed for the enantioselective epoxidation of α,β-unsaturated ketones, in which a compound of the general formula I, is reacted with an oxidizing agent to form α,β-epoxy ketones of the general formula II, in which R1, R2, R3 are as defined above. The α,β-epoxy ketones of the general formula II can be obtained in good yields and outstanding enantioselectivities from α,β-unsaturated ketones of the general formula I by epoxidation with hydrogen peroxide in the presence of a chiral catalyst, such as amino compounds and their acid addition salts.
US08471039B2
Processes for the preparation of Silodosin and its intermediates comprising reductive amination of compound of Formula (VIII) with a compound of Formula (VII) or a compound of Formula (XV) in a suitable solvent using a reducing agent.
US08471031B2
The present invention relates to a novel process for the preparation of a sterically hindered nitroxyl ether from the corresponding sterically hindered nitroxyl radical by reacting it with a carbonyl compound and a hydroperoxide. The compounds prepared by this process are effective stabilizers for polymers against harmful effects of light, oxygen and/or heat, as flame-retardants for polymers and as polymerization regulators.
US08471024B2
The present invention relates to Tetrahydrofuropyridones compounds useful as HIF prolyl hydroxylase inhibitors to treat anemia and like conditions.
US08471022B2
This invention relates to the synthesis of (R),(R)-2,2′-bis-MNTX, as shown in Formula (I), and related methods and products.
US08471020B2
The present invention provides a compound of formula The compound of formula (1) is suitable for use as semiconducting material, in particular in electronic devices.
US08471016B2
The present invention provides a process for preparing a compound of formula (I), or a pharmaceutically acceptable salt thereof, having the R-configuration, of formula (IA), or S-configuration of formula (IB), selectively over the other enantiomer.
US08471014B2
The present application is directed to compounds, intermediates and methods for preparing compounds of formula (I) or a pharmaceutically acceptable salts thereof, wherein R is H or F, and each of R3, R4, and R5 are as defined herein. The compounds of formula (I) and pharmaceutical compositions comprising said compounds and salts inhibit bacterial gyrase and/or Topo IV and are useful in treating bacterial infections.
US08471011B2
A process for the preparation of an acid addition salt of an organic base comprising exposing the organic base in solid form to a gaseous acid, with the proviso that ziprasidone, its acid addition salts and intermediates thereof are excluded.
US08471007B2
Process for preparing higher 1,3,5-triazine carbamates and 1,3,5-triazine ureas from lower 1,3,5-triazine carbamates.
US08470987B2
A protective group represented by the following general formula (I) (the oxygen atom attached with * represents oxygen atom of 2′-hydroxyl group of a ribonucleoside, a ribonucleotide or a derivative thereof; R1 and R2 both represent hydrogen atom, or represent a halogen atom, a C1-6 alkyl group, or a C1-6 halo-substituted alkyl group; R3 and R4 represent hydrogen atom, a halogen atom, a C1-6 alkyl group, or a C1-6 halo-substituted alkyl group; and R5 and R6 represent a halogen atom, a C1-6 halo-substituted alkyl group, cyano group, nitro group, or the like), which is stable under the reaction conditions of the nucleic acid synthetic cycles and has little steric hindrance, and can be removed under mild conditions using fluoride ions as a base.
US08470985B2
The present invention provides triazole macrocyclic compounds useful as therapeutic agents. More particularly, these compounds are useful as anti-infective, antiproliferative, anti-inflammatory, and prokinetic agents. These compounds are represented by the following formula (I): wherein R1, R2, ect. Are defined in claim 1.
US08470978B2
Described are methods of separating viable cells, apoptotic cells and dead cells and antibodies or use in such methods. The antibodies may also be used in treatment of inflammatory disease, cancer and in wound healing.
US08470971B2
Disclosed are a cell-permeable p53 recombinant protein in which a macromolecule transduction domain (MTD) is fused to the tumor suppressor p53, a polynucleotide encoding the same, a recombinant expression vector for producing the same, and a pharmaceutical composition of the treatment of cancer, comprising the same. Having high cell permeability, the p53 recombinant protein is effectively transduced into cells so that the tumor suppressor p53 can be translocated into cell nuclei. Within nuclei, p53 inhibits the formation of cyclin-CDK complexes to halt the cell cycle, thus suppressing excessive cell proliferation and inducing apoptosis of tumor cells. Therefore, the p53 recombinant protein can be useful as an anticancer agent in the treatment of various cancers.
US08470964B2
The present invention relates to novel compounds comprising at most 13 contiguous amino acid residues derived from the fibronectin type 3,11 module of neural cell adhesion molecule (NCAM), or a variant or fragment thereof, capable of interacting with an FGFR and thereby the compounds are capable of inducing differentiation, modulating proliferation, stimulate regeneration, neuronal plasticity or survival of cells. Further, the present invention relates to the use of the compounds for production of a medicament for treatment of conditions and diseases, in which NCAM or FGFR play a prominent role.
US08470954B2
A novel macromer or mixture thereof is described herein, comprising benzoyl isocyanate terminal moieties and at least two residues of a water-soluble polymer having a molecular weight ranging from 80 to 10,000 adjacent to the carbonyl group of the benzoyl isocyanate moieties, thereby forming at least two ester linkages in the macromer or mixture thereof. A method for making a polyisocyanate macromer is also described herein.
US08470952B2
The present invention relates to a composition for a thermosetting silicone resin, the composition including: (1) a dual-end silanol type silicone oil; (2) an alkenyl group-containing dialkoxyalkylsilane; (3) an organohydrogensiloxane; (4) a condensation catalyst; and (5) a hydrosilylation catalyst.
US08470950B2
A method is described for sealing and assembling components of a drive train by means of silicon elastomers prepared using silicon compositions that do not contain any metal catalyst such as, for example, tin, and cross-linking by polycondensation reactions in the presence of water (for example, ambient moisture).
US08470945B2
The invention provides a polymerizable composition which comprises: a) acrylates and/or methacrylates, b) 0.05% to 70% by weight of SiO2 particles having an average particle size of 1 to 30 nm which have polymerizable groups of the methacryloyl, acryloyl, styryl, itaconyl, crotonyl, vinyl, allyl and/or alkenyl type on the surface and are present in dispersion in the acrylates and/or methacrylates, at least 50% of the SiO2 particles consisting of individual, unaggregated or unagglomerated primary particles, c) not more than 2% by weight of crosslinker molecules.
US08470943B2
A solid polymer electrolyte material made of a copolymer comprising a repeating unit based on a fluoromonomer A which gives a polymer having an alicyclic structure in its main chain by radical polymerization, and a repeating unit based on a fluoromonomer B of the following formula (1): CF2═CF(Rf)jSO2X (1) wherein j is 0 or 1, X is a fluorine atom, a chlorine atom or OM {wherein M is a hydrogen atom, an alkali metal atom or a group of NR1R2R3R4 (wherein each of R1, R2, R3 and R4 which may be the same or different, is a hydrogen atom or a monovalent organic group)}, and Rf is a C1-20 polyfluoroalkylene group having a straight chain or branched structure which may contain ether oxygen atoms.
US08470939B2
A process for preparing a polyethylene in a multi-stage process is described. The process comprises pre-treating a Ziegler catalyst in a first stage in the presence of a 1-olefin/ethylene mixture or a 1-olefin to produce a LLDPE or VLDPE, which have the characteristics of a polymer prepared with a single-site catalyst, e.g. high levels of short-chain branching that are uniformly distributed. The contents of the first stage are then transferred to a second stage where an ethylene or an ethylene/1-olefin mixture is polymerized in the presence of the pre-treated catalyst to form a polyethylene with good processability.
US08470936B2
A liquid epoxy resin composition for semiconductor encapsulation comprising: (A) at least one epoxy resin, (B) at least one curing accelerator and (C) at least one acid anhydride terminated polyamic acid. The liquid epoxy resin composition provides a cured material that has an excellent adhesiveness to a semiconductor chip surface and has an excellent moisture resistance.
US08470929B2
Provided is a composition for a stretchable film, which achieves a high-level balance between a high elastic modulus and a small permanent set, and can be formed into a stretchable film with satisfactory formability. A composition for a stretchable film comprises a block copolymer composition containing a block copolymer A represented by the following general formula (A) and a block copolymer B represented by the following general formula (B), and a tackifier resin: Ar1a-Da-Ar2a (A) (Arb-Db)n-X (B), in the general formulas (A) and (B), Ar1a and Arb each represent an aromatic vinyl polymer block having a weight average molecular weight of 6,000 to 20,000; Ar2a represents an aromatic vinyl polymer block having a weight average molecular weight of 40,000 to 400,000; Da and Db each represent a conjugated diene polymer block having a vinyl bond content of 1 mol % to 20 mol %; X represents a single bond or a residue of a coupling agent; and n represents an integer of 2 or greater.
US08470918B2
There are provided an epoxy resin composition exhibiting less warpage after molding and during a solder treatment process as well as during a low temperature process of, for example, a temperature cycle test, and excellent in flame retardancy, solder crack resistance, and flowability; and a semiconductor device using the same. The epoxy resin composition used in the semiconductor device contains at least one type of epoxy resin (A) selected from a trifunctional epoxy resin and a tetrafunctional epoxy resin, a curing agent (B) having at least two hydroxyl groups per molecule, a compound (C) having at least two cyanate groups per molecule, and an inorganic filler (D), as essential components.
US08470909B2
A tire puncture sealant is disclosed and described. Such a sealant may include a natural rubber latex and a surfactant, wherein a content of the surfactant is from 1.0 to 6.0 mass % of a solid content of the natural rubber latex and the surfactant includes a non-ionic surfactant and an anionic surfactant at a mass ratio where the non-ionic surfactant/the anionic surfactant=1.0/1.0 to 1.0/5.0.
US08470903B2
The present invention generally provides implantable articles and methods of forming implantable articles from a crosslinked ultrahigh molecular weight polyethylene (“UHMWPE”) blend stabilized with Vitamin E. The crosslinked UHMWPE blend may be prepared by combining the UHMWPE material and vitamin E prior to irradiating the UHMWPE blend with electron beam radiation at a sufficient radiation dose rate to induce crosslinking. The crosslinked UHMWPE blend may be incorporated into a variety of implants, and in particular, into endoprosthetic joint replacements.
US08470900B2
The present invention relates to a porous polymer and a synthetic method thereof. The porous polymer has the following general formula: wherein, the positions marked with the numeral 1-10 are C, CH, N, or CH with its H being substituted by methyl, ethyl, amido, carboxyl, methoxyl, hydroxyl, or ester group; the positions marked with letter a or b are C, N+, or B−.
US08470897B2
A process for devulcanizing crosslinked elastomer particles comprising applying an alternating electric field to a composition comprising crosslinked elastomer particles under compression. The alternating electric field preferably has a frequency between 1 and 100 MHz and a voltage between 1000 and 10,000 V, and may be applied between an apparatus that continuously conveys the particles through the field.
US08470891B2
A biodegradable block copolymer is disclosed, comprising a hydrophilic block derived from a polyether alcohol; and a hydrophobic block comprising a first repeat unit derived by ring opening polymerization of a first cyclic carbonyl monomer initiated by the polyether alcohol, the first repeat unit comprising a side chain moiety comprising a functional group selected from the group consisting of i) urea groups and ii) mixtures of urea groups and carboxylic acid groups. No side chain of the hydrophobic block comprises a covalently bound biologically active material. The block copolymer self-assembles in water forming micelles suitable for sequestering a biologically active material by a non-covalent interaction, and the block copolymer is 60% biodegraded within 180 days in accordance with ASTM D6400.
US08470871B2
Novel ligand compounds having the general formula (I): and pharmaceutical/cosmetic compositions comprised thereof are useful in human and veterinary medicine or, alternatively, in cosmetics.
US08470841B2
Heterocyclic derivatives, processes for their preparation, medicaments comprising these compounds, and the use thereof. The invention relates to compounds of the formula I in which the radicals R1, R2, R3, R4, W, A, B, D, E, G, L, M, R, T and Y have the stated meanings, and to the physiologically tolerated salts thereof. The compounds are suitable for example for the treatment of the metabolic syndrome, insulin resistance, obesity and diabetes.
US08470840B2
A fungicidal composition containing a fungicidally effective amount of a) a compound of Formula IA and/or IB and (b) at least one fungicide selected from the group consisting of epoxiconazole, prothioconazole, azoxystrobin, pyraclostrobin, penthiopyrad, isopyrazam, bixafen, boscalid, prochloraz, chlorothalanil, isobutyric acid (3S,6S,7R,8R)-8-benzyl-3-[(3-isobutyryloxymethoxy-4-methoxypyridine-2-carbonyl)-amino]-6-methyl-4,9-dioxo-[1,5]dioxonan-7-yl ester, and (5,8-difluoroquinazolin-4-yl)-{2-[2-fluoro-4-(4-trifluoromethylpyridin-2-yloxy)-phenyl]-ethyl}-amine provides synergistic control of selected fungi.
US08470837B2
Compounds of the following formula are provided for use with MEK: wherein the variables are as defined herein. Also provided are pharmaceutical compositions, kits and articles of manufacture comprising such compounds; methods and intermediates useful for making the compounds; and methods of using the presently described compounds.
US08470825B2
The present invention relates to diazabenzo[de]anthracen-3-one compounds which inhibit poly(ADP-ribose) polymerase (“PARP”), compositions containing these compounds and methods for using these PARP inhibitors to treat, prevent and/or ameliorate the effects of the conditions described herein.
US08470823B2
The present invention relates to compounds of formula I: and pharmaceutically acceptable salts or tautomers thereof which are inhibitors of the Sonic Hedgehog pathway, in particular Smoantagonists. Thus the compounds of this invention are useful for the treatment of diseases associated with abnormal hedgehog pathway activation, including cancer, for example basal cell carcinoma, medulloblastoma, prostate, pancreatic, breast, colon, bone and small cell lung cancers, and cancers of the upper GI tract.
US08470821B2
Compounds active on phosphodiesterase PDE4B are provided. Also provided herewith are compositions useful for treatment of PDE4B-mediated diseases or conditions, and methods for the use thereof.
US08470820B2
The invention is concerned with novel nitrogen-containing heteroaryl derivatives of formula (I) wherein R1, R2, R3, R4, R5, A1, A2, and Y are as defined in the description and in the claims, as well as physiologically acceptable salts and esters thereof. These compounds inhibit PDE10A and can be used as medicaments.
US08470814B2
A diazepinedione derivative represented by the formula (I) or a pharmacologically acceptable salt thereof is used as a P2X4 receptor antagonist: wherein R1 represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or the like, R2 and R3 represent a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a halogen atom, or the like, R4 and R5 represent a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or the like, and W represents tetrazole or the like.
US08470803B2
This invention provides, among other things, novel compounds useful for treating inflammatory conditions, pharmaceutical compositions containing such compounds, as well as combinations of these compounds with at least one additional therapeutically effective agent.
US08470802B2
Sensory modifiers and compositions comprising sensory modifiers are described. The sensory modifiers comprise polysaccharide carbohydrate having at least about 75% by weight amylopectin and the polysaccharide carbohydrate has been treated and swollen with a substantially anhydrous solvent.
US08470801B2
A myocardial imaging method that is accomplished by administering one or more adenosine A2A adenosine receptor agonist to a human undergoing myocardial imaging as well as pharmaceutical compositions comprising at least one A2a receptor agonist, at least one liquid carrier, and at least one co-solvent.
US08470799B2
The invention relates to a double-stranded ribonucleic acid (dsRNA) for inhibiting the expression of the HAMP gene (HAMP gene), comprising an antisense strand having a nucleotide sequence which is less that 30 nucleotides in length, generally 19-25 nucleotides in length, and which is substantially complementary to at least a part of the HAMP gene. The invention also relates to a pharmaceutical composition comprising the dsRNA together with a pharmaceutically acceptable carrier; methods for treating diseases caused by HAMP gene expression and the expression of the HAMP gene using the pharmaceutical composition.
US08470798B2
The present inventors discovered that inhibition of the expression of various genes associated with chromosome stabilization induces cancer cell-specific apoptosis and inhibits cell proliferation. Compounds that inhibit expression of a gene associated with chromosome stabilization or inhibit the function of a protein encoded by such a gene are thought to have cancer cell-specific apoptosis-inducing effects.
US08470792B2
Disclosed herein are siRNA compositions and methods useful for inhibiting expression of vascular endothelial growth factor (VEGF) isoforms. Such compositions and methods further involve siRNA capable of selectively targeting angiogenic VEGF isoforms while selectively sparing anti-angiogenic isoforms. Diseases which involve angiogenesis stimulated by overexpression of VEGF, such as diabetic retinopathy, age related macular degeneration and many types of cancer, can be treated by administering small interfering RNAs as disclosed.
US08470782B2
Transglutaminase inhibitors and methods of use thereof are provided.
US08470780B2
Disclosed are compositions and methods useful for targeting regenerating tissue, wounds, and tumors. The compositions and methods are based on peptide sequences that selectively bind to and home to regenerating tissue, wound sites, and tumors in animals. The disclosed targeting is useful for delivering therapeutic and detectable agents to regenerating tissue, wound sites, and tumors in animals.
US08470777B2
The present invention relates to a method to increase oligodendrocytes and oligodendrocyte precursor cells through administration of prolactin or a prolactin inducing agent.
US08470774B2
Compositions and methods for inducing the deposition of elastin in skin by administering compositions including a mineralocorticoid, such as, for example, aldosterone and, optionally, a secondary active agent for enhancing or modulating the effect of the mineralocorticoid are described herein.
US08470771B2
The invention relates to a process for inhibiting the infection of influenza viruses and a polypeptide or protein medicine used therein. More particularly, the invention involves a process for inhibiting the highly pathogenic avian influenza virus (such as H5N1 subtype) infection and human influenza virus (such as H1N1 subtype and H3N2 subtype) infection, as well as the polypeptide or protein involved therein, and a polynucleotide encoding the polypeptide or protein and a vector or host cell expressing said polypeptide or protein.
US08470768B2
The present invention relates to antibodies raised against fragments of apolipoprotein B, in particular defined peptides thereof, for immunization or therapeutic treatment of mammals, including humans, against ischemic cardiovascular diseases, using one or more of the antibodies.
US08470766B2
The present invention provides novel formulations of a δPKC inhibitor. The δPKC inhibitor can be, for example, a peptide. The present invention also discloses a method of preventing acute pulmonary cell injury associated with trauma, ALI or ARDS and a method of inhibiting an inflammatory response in pulmonary cells by inhibiting the activity of δPKC. The invention also provides a method of treating a pulmonary disease with an aerosol formulation of a δPKC inhibitor to inhibit neutrophil activity.
US08470762B2
Fabric softening compositions comprising polymeric materials capable of retaining volatile perfume ingredients are disclosed, as well as methods of softening fabrics.
US08470758B2
Disclosed herein are compositions comprising an alpha-amylase enzyme obtained from Bacillus sp. no. 195, and methods of using the enzyme to clean surfaces and textiles. Also disclosed are variants of the enzyme with different signal sequences.
US08470753B2
An ethylene oxide-free, dioxane-free, and formaldehyde-free personal care concentrate composition free of ethoxylated components which is non-irritating to eyes comprising water, sodium alkyl sulfate, propanediol, and a synthetic amphoteric surfactant selected from the group consisting of cocamidopropyl hydroxysultaine and cocamidopropyl betaine is disclosed. This composition is especially suitable for baby shampoos which are not irritating. In some embodiments the composition is free of formaldehyde.
US08470752B2
Lubricant compositions for use in automotive engine oils comprising a combination of a specific base stock or mixture of base stocks and a friction reducing additive to improve fuel economy and fuel economy longevity of the automotive engine oil. The friction reducing additive is a specific partial polyol ester and may also include a specific saturated primary amide.
US08470747B2
Of the many methods provided herein, one method of reducing the viscosity of a viscosified treatment fluid includes: providing a clean-up composition comprising a carboxylic acid; providing a chlorite-based breaker system; providing a viscosified treatment fluid; placing the viscosified treatment fluid in a subterranean formation via a well bore penetrating the subterranean formation; contacting the viscosified treatment fluid with the clean-up composition; contacting the viscosified treatment fluid with the chlorite-based breaker; and allowing the viscosity of the viscosified treatment fluid to reduce. Also provided herein are methods that include a method of reducing polymeric residue from a subterranean formation that includes: placing a clean-up composition and a chlorite-based breaker system in a subterranean formation in contact with an amount of polymeric residue; and allowing the amount of polymeric residue present in the formation to be reduced.
US08470746B2
The present invention relates to methods and compositions for treating a water- and hydrocarbon-producing subterranean formation with a relative permeability modifier, and more specifically, to improved treatment fluids, methods for preparing treatment fluids, and methods for use thereof in a subterranean formation. Methods of the present invention comprise providing a treatment fluid comprising a relative permeability modifier, at least one surfactant, and an aqueous phase base fluid; and placing the treatment fluid in a subterranean formation. The relative permeability modifier comprises a hydrophobically modified hydrophilic polymer. The at least one surfactant is operable to maintain the relative permeability modifier in a dissolved state in the treatment fluid above a pH of about 8.
US08470727B2
Zinc carboxylate clays and zinc carboxylate organoclays, methods for their preparation, and compositions containing the same are disclosed. The methods comprise either mixing a zinc clay composition with a carboxylic acid, or mixing a carboxylic acid with a zinc ammonia complex solution, then combining the resulting zinc carboxylate salt with a slurry or suspension of a cation-exchangeable clay, to prepare the zinc carboxylate clay. These clays can be further intercalated with quaternary ammonium salts to make zinc carboxylate organoclays. The present clays may be used in compositions and/or as additives in rubber and plastic formulations and products and in catalyst formulations.
US08470726B2
A catalyst is presented for use in the production of linear alkylbenzenes. The catalyst includes two zeolites combined to improve the quality of the linear alkylbenzenes. The catalyst includes a first zeolite that is UZM-8 and a second zeolite that is a low silica to alumina ratio zeolite. The second zeolite is also cation exchanged with a rare earth elements to provide a zeolite that increases the alkylation of benzene while reducing the amount of skeletal isomerization.
US08470724B2
Upon producing a transparent polycrystalline material, a suspension liquid (or slurry 1) is prepared, the suspension liquid being made by dispersing a raw-material powder in a solution, the raw-material powder including optically anisotropic single-crystalline particles to which a rare-earth element is added. A formed body is obtained from the suspension liquid by means of carrying out slip casting in a space with a magnetic field applied. On this occasion, while doing a temperature control so that the single-crystalline particles demonstrate predetermined magnetic anisotropy, one of static magnetic fields and rotary magnetic fields is selected in compliance with a direction of an axis of easy magnetization in the single-crystalline particles, and is then applied to them. A transparent polycrystalline material is obtained by sintering the formed body, the transparent polycrystalline material having a polycrystalline structure whose crystal orientation is controlled. In this calcination step, after subjecting the formed body to primary sintering at a temperature of 1,600-1,900 K, the resulting primarily-sintered body undergoes hot-isotropic-press sintering (or HIP processing) at a temperature of 1,600-1,900 K.
US08470715B2
A method for etching a line pattern in an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The method includes opening the ARC layer, in which an ARC opening gas comprising CF3I, a fluorocarbon (including hydrofluorocarbon) containing gas, and an oxygen containing gas are provided, a plasma is formed from the ARC opening gas to open the ARC layer, and providing the ARC opening gas is stopped. Line pattern features are etched into the etch layer through the opened ARC layer.
US08470714B1
A method of forming fin structure in integrated circuit comprising the steps of forming a plurality of fin structures on a substrate, covering an insulating layer on said substrate, performing a planarization process to expose mask layers, performing a wet etching process to etch said insulating layer, thereby exposing a part of the sidewall of said mask layer, removing said mask layer, and performing a dry etching process to remove pad layer and a part of said insulating layer, thereby exposing the top surface and a part of sidewall of said fin structures.
US08470711B2
A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.
US08470710B2
A method of forming a metal pattern includes depositing a metal material over a photosensitive, insulative material and into a trench positioned over a bond pad. A photoresist material having a substantially planar surface may be formed over the metal material. A portion of the photoresist material may be etched to expose the metal material outside of the trench. The metal material may be isotropically etched to leave sidewalls of the metal protruding above surfaces of the photosensitive, insulative material outside of the trench. Some methods include removing a portion of a dielectric material to form at least one trench. Metal material and photoresist material may be deposited over the trench. A portion of the photoresist material may be etched to expose areas of the metal material. The metal material may be etched to form sidewalls of the metal material that protrude above the dielectric material.
US08470704B2
A nonvolatile memory device and a method of forming a nonvolatile memory device are provided. The nonvolatile memory device includes an active region of a semiconductor substrate defined by a device isolation layer, a tunnel insulating structure disposed on the active region, and a charge storage structure disposed on the tunnel insulating structure. The nonvolatile memory device also includes a gate interlayer dielectric layer disposed on the charge storage structure, and a control gate electrode disposed on the gate interlayer dielectric layer. The charge storage structure includes an upper charge storage structure and a lower charge storage structure, and the upper charge storage structure has a higher impurity concentration than the lower charge storage structure.
US08470703B2
Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time. The sequentially performed first and second heat-treatment processes convert the Ni metal layer on the source and drain regions into a NiSi layer on the source and drain regions and a NiSi2 layer between the NiSi layer and the source and drain regions.
US08470688B2
A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor layer including a first channel formation region and a first impurity region over a substrate having an insulating surface, a first gate insulating layer over the first single-crystal semiconductor layer, a gate electrode over the first gate insulating layer, a first interlayer insulating layer over the first gate insulating layer, a second gate insulating layer over the gate electrode and the first interlayer insulating layer, and a second single-crystal semiconductor layer including a second channel formation region and a second impurity region over the second gate insulating layer. The first channel formation region, the gate electrode, and the second channel formation region are overlapped with each other.
US08470685B2
The present invention provides an improved method of forming air cavities to overcome IC via-misalignment issues. The method of forming air cavity trenches in-between metal lines of an integrated circuit includes the steps of partially removing (42) an intertrack dielectric deposited on an interconnect structure surface to control the height between the top surface of a metal line of the interconnect surface and the surface of the intertrack dielectric; depositing (44) a dielectric liner on the interconnect surface; removing (46) at least part of the dielectric liner on the interconnect surface; successively repeating (48) the deposition of the dielectric liner and the removal of the dielectric liner on the interconnect surface in so far as the interconnect surface is sufficiently protected by a remaining dielectric liner for forming of the plurality of air cavity trenches; and forming (50) at least one air cavity trench in-between the metal lines by etching the intertrack dielectric material.
US08470683B2
The invention relates to a method of manufacturing an integrated circuit. An electrically resistive layer of a material for serving as a thin film resistor (TFR) is deposited. A first electrically insulating layer is deposited on the electrically resistive layer of the TFR. An electrically conductive layer of an electrically conductive material is deposited. An area is left without the conductive layer and the area overlaps the electrically resistive layer of the TFR. A second electrically insulating layer is deposited on top of the conductive layer. A first VIA opening is etched through the second insulating layer, the area without the conductive layer adjacent to the electrically conductive layer and through the first insulating layer down to the electrically resistive layer of the TFR. A conductive material is deposited in the first VIA opening so as to electrically connect the conductive layer and the electrically resistive layer of the TFR.
US08470681B2
A resistor with improved switchable resistance includes a first electrode, a second electrode, and an insulating dielectric structure between the first and second electrodes. The insulating dielectric structure includes a confined conductive region providing a first resistance state and a second resistance state; the resistance state of the confined conductive region being switchable between the first and second resistance states by a control signal.
US08470678B2
A method for inducing a tensile stress in a channel of a field effect transistor (FET) includes forming a nitride film over the FET; forming a contact hole to the FET through the nitride film; and performing ultraviolet (UV) curing of the nitride film after forming the contact hole to the FET through the nitride film, wherein the UV cured nitride film induces the tensile stress in the channel of the FET.
US08470675B2
A process of forming an integrated circuit, including forming a dummy oxide layer for ion implanting low voltage transistors, replacing the dummy oxide in the low voltage transistor area with a thinner gate dielectric layer, and retaining the dummy oxide for a gate dielectric for a DEMOS or LDMOS transistor. A process of forming an integrated circuit, including forming a dummy oxide layer for ion implanting low voltage and intermediate voltage transistors, replacing the dummy oxide in the low voltage transistors with a thinner gate dielectric layer, replacing the dummy oxide in the intermediate voltage transistor with another gate dielectric layer, and retaining the dummy oxide for a gate dielectric for a DEMOS or LDMOS transistor.
US08470672B2
A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.
US08470665B2
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
US08470659B2
This description relates to a method including forming an interfacial layer over a semiconductor substrate. The method further includes etching back the interfacial layer. The method further includes performing an ultraviolet (UV) curing process on the interfacial layer. The UV curing process includes supplying a gas flow rate ranging from 10 standard cubic centimeters per minute (sccm) to 5 standard liters per minute (slm), wherein the gas comprises inert gas, and heating the interfacial layer at a temperature less than or equal to 700° C. The method further includes depositing a high-k dielectric material over the interfacial layer.
US08470658B2
A semiconductor integrated circuit device and method of fabricating a semiconductor integrated circuit device, the method including preparing a first conductivity type substrate including a first conductivity type impurity such that the first conductivity type substrate has a first impurity concentration; forming a buried impurity layer using blank implant such that the buried impurity layer includes a first conductivity type impurity and has a second impurity concentration higher than the first impurity concentration; forming an epitaxial layer on the substrate having the buried impurity layer thereon; and forming semiconductor devices and a device isolation region in or on the epitaxial layer.
US08470657B1
An ion implantation method for semiconductor sidewalls includes steps of: forming a trench on a substrate, and the trench having a lower reflecting layer and two sidewalls adjacent to a bottom section; performing a plasma doping procedure to sputter conductive ions to the lower reflecting layer and the conductive ions being rebounded from the lower reflecting layer to adhere to the sidewalls to respectively form an adhesion layer thereon; and performing an annealing procedure to diffuse the conductive ions of the adhesion layer into the substrate to form a conductive segment. Thus, without damaging the substrate, the conductive segment having a high conductive ion doping concentration is formed at a predetermined region to satisfy semiconductor design requirements.
US08470650B2
An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.
US08470648B2
A semiconductor device including a plurality of field-effect transistors which are stacked with a planarization layer interposed therebetween over a substrate having an insulating surface, in which semiconductor layers in the plurality of field-effect transistors are separated from semiconductor substrates, and the semiconductor layers are bonded to an insulating layer formed over the substrate having an insulating surface or an insulating layer formed over the planarization layer.
US08470647B2
There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24, 25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.
US08470642B2
Methods and devices for multi-chip stacks are shown. A method is shown that assembles multiple chips into stacks by stacking wafers prior to dicing into individual chips. Methods shown provide removal of defective chips and their replacement during the assembly process to improve manufacturing yield.
US08470640B2
A method of fabricating a semiconductor die and a low profile semiconductor package are disclosed. The semiconductor package may include at least first and second stacked semiconductor die mounted to a substrate. The first and/or second semiconductor die may be fabricated with localized cavities through a bottom surface of the semiconductor die, along a side edge of the semiconductor die. The one or more localized cavities in a side take up less than the entire side. Thus, the localized cavities allow low height stacking of semiconductor die while providing each die with a high degree of structural integrity to prevent cracking or breaking of the die edge during fabrication.
US08470638B2
A thin film transistor and a manufacturing method thereof are provided. In the manufacturing method of the thin film transistor a semiconductive active layer and a semiconductor passivation layer are sequentially formed such that the semiconductor passivation layer protectively covers the semiconductive active layer. Then the stacked combination of the semiconductive active layer and semiconductor passivation layer are patterned by using a same patterning mask so that formed islands of the semiconductive active layer continue to be protectively covered by formed islands of the semiconductor passivation layer. In one embodiment, the semiconductive active layer is formed of a semiconductive oxide.
US08470637B2
A method for fabricating a resistor for a resistance random access memory (RRAM) includes: (a) forming a first electrode over a substrate; (b) forming a variable resistance layer of zirconium oxide on the first electrode under a working temperature, which ranges from 175° C. to 225° C.; and (c) forming a second electrode of Ti on the variable resistance layer.
US08470635B2
Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.
US08470629B2
A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented.
US08470626B2
Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.
US08470624B2
A fabricating method of an organic electroluminescent display unit is provided. A gate and a gate insulating layer covering the gate are formed on the substrate. A patterned metal-oxide layer with an etching stop layer thereon is formed on the gate insulating layer. A surface treatment is performed on the patterned metal-oxide layer with use of the etching stop layer as a mask, such that a portion of the patterned metal-oxide layer uncovered by the etching stop layer has greater conductivity than conductivity of another portion of the patterned metal-oxide layer covered by the etching stop layer. The patterned metal-oxide layer treated by the surface treatment includes a pixel electrode and an active layer located above the gate. A source and a drain are then formed. And then, an organic electro-luminescence layer and a top electrode are sequentially formed on the pixel electrode.
US08470621B2
A method for fabricating flip-chip semiconductor optoelectronic devices initially flip-chip bonds a semiconductor optoelectronic chip attached to an epitaxial substrate to a packaging substrate. The epitaxial substrate is then separated using lift-off technology.
US08470620B2
A solid-state imaging device with a semiconductor substrate; a pixel formation region in the substrate and including a pixel made of a photoelectric conversion element; and an element isolation portion in the substrate and including an element isolation insulating layer and an impurity element isolation region. The element isolation insulating layer is positioned in a surface of the substrate. The impurity element isolation region is positioned under the element isolation insulating layer and within the substrate. The impurity element isolation region has at least a portion with a width that is narrower than that of the element isolation insulating layer. The photoelectric conversion element extends to a position under the element isolation insulating layer of the element isolation portion.
US08470619B2
A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a semiconductor material at the surface to be textured. By texturing the surface, light trapping within the template layer is reduced. Furthermore, by patterning the arrangement of pits, metal coating each pit can be arranged to spread current through the template layer and thus through the n-doped region of a LED.
US08470617B2
Methods for depositing nanomaterial onto a substrate are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a system and devices useful for depositing nanomaterials.
US08470611B2
A method of a general biological approach to synthesizing compact nanotubes using a biological template is described.
US08470609B2
A versatile drug testing device (a lateral flow diagnostic testing device) includes a flat transparent carrier with a top and a bottom with the carrier having a series of independent parallel grooves formed therein running from adjacent to the top to adjacent to the bottom of the carrier, each groove having a first opening and a second opening above the first opening therein adjacent to the bottom of the carrier, at least one drug test strip installed in one of said grooves with its absorbent pad contiguous to the openings and a cover layer attached to the carrier operable to sealing close each of said grooves whereby the bottom of the device can be immersed in a specimen of “urine”, “body fluid” or “other biological specimen” to wet the pad of the at least one test strip though the ingress of the specimen though the associated openings and the test results on the test strip can be easily viewed through the transparent carrier. Because of the unique construction the device will give accurate reading if temporarily immersed in the specimen or left in the specimen for an extended period of time, making it very user friendly.
US08470600B2
A biocompatible material, wherein at least a part of a surface of the biocompatible material is characterized by a micro or nano-meter scale topographical structure comprising a plurality of features where the structure is selected to promote the growth of undifferentiated pluripotent stem cells or serve to promote the uniform differentiated growth of stem cells. Furthermore, a biocompatible material is provided having a surface structure and composition that affects a cellular function, in particular cellular functions related to gene induction, cell differentiation and the formation of bone tissue in vivo and ex-vivo.
US08470596B2
Described herein are isolated mammalian cells (progenitor cell biomarkers), referred to as primitive vascular progenitor cells (PVPC), which are present in and isolated from blood (e.g., peripheral blood) and useful as biomarkers of vascular remodeling in mammals (e.g., humans, rodents).
US08470592B2
The present invention provides for the isolation and characterization of the cbh1 gene from Schizochytrium aggregatum. In particular, the present invention provides for the nucleic acid and amino acid sequences of Schizochytrium aggregatum cbh1, and domains, variants and derivatives thereof. The present invention further provides for the heterologous expression of Schizochytrium aggregatum Cbh1 in host cells, including yeast, e.g., Saccharomyces cerevisiae. Expression of Schizochytrium aggregatum Cbh1 in host cells will augment cellulose digestion and facilitate ethanol production by those host cells on cellulosic substrates. In certain embodiments, heterologous expression in Saccharomyces cerevisiae is in coordination with heterologous expression of other known, or newly identified saccharolytic enzymes. Therefore, the present invention also provides that the novel Schizochytrium aggregatum Cbh1 gene can utilized in a consolidated bioprocessing system.
US08470589B2
A multilayered cell culture apparatus for the culturing of cells is disclosed. The cell culture apparatus is defined as an integral structure having a plurality of cell culture chambers in combination with tracheal space(s). The body of the apparatus has imparted therein gas permeable membranes in combination with tracheal spaces that will allow the free flow of gases between the cell culture chambers and the external environment. The flask body also includes an aperture that will allow access to the cell growth chambers by means of a needle or cannula. The size of the apparatus, and location of an optional neck and cap section, allows for its manipulation by standard automated assay equipment, further making the apparatus ideal for high throughput applications.
US08470588B2
A test element and method for detecting an analyte with the aid thereof is provided. The test element is essentially disk-shaped and flat, and can be rotated about a preferably central axis which is perpendicular to the plane of the disk-shaped test element. The test element has a sample application opening for applying a liquid sample, a capillary-active zone, in particular a porous, absorbent matrix, having a first end that is remote from the axis and a second end that is near to the axis, and a sample channel which extends from an area near to the axis to the first end of the capillary-active zone that is remote from the axis.
US08470572B2
The present disclosure provides engineered ketoreductase enzymes having improved properties as compared to a naturally occurring wild-type ketoreductase enzyme. Also provided are polynucleotides encoding the engineered ketoreductase enzymes, host cells capable of expressing the engineered ketoreductase enzymes, and methods of using the engineered ketoreductase enzymes to synthesize a variety of chiral compounds.
US08470568B2
Provided herein compositions and methods for producing isoprenoids, including squalene. In certain aspects and embodiments provided are genetically converted yeast and uses therefore. In some aspects and embodiments, the genetically converted yeast produce isoprenoids, preferably squalene. Also are provided methods of producing squalene using a genetically converted yeast or a non-genetically converted yeast. The invention also provides squalene produced by genetically converted yeast or non-genetically converted yeast.
US08470562B2
A highly efficient method of making a primary cell derived biologic by purifying mononuclear cells (MNCs) in a automated cell processor to remove contaminating cells by loading leukocytes onto lymphocyte separation medium (LSM) and centrifuging the medium to obtain purified MNCs, storing the MNCs overnight in a closed sterile bag system, stimulating an induction mixture of the MNCs with phytohemagglutinin (PHA) or other mitogen and ciprofloxacin in a scalable cell culture device and producing a primary cell derived biologic from the MNCs, removing the mitogen from the induction mixture by filtering, incubating the induction mixture, clarifying the induction mixture by filtering to obtain a primary cell derived biologic supernatant, and clearing the primary cell derived biologic supernatant from adventitious agents by anion exchange chromatography, filtration. A closed system prevents contamination of the resulting primary cell derived biologic. An automated method of purifying cells. A method of scalably inducing cells.
US08470559B2
We disclose growth hormone [GH] fusion proteins that have increased in vivo stability and activity; nucleic acid molecules encoding said proteins and methods of treatment of growth hormone deficiency that use said fusion proteins. The GH fusion proteins comprise human GH covalently linked to the extracellular domain of Growth Hormone Receptor [GHR] either as a direct in-frame translational fusion or via a flexible peptide linker. The GH/GHR fusion proteins have exceptional pharmacokinetics and are potent growth hormone receptor agonists. The GH/GHR fusion proteins form head to tail dimers.
US08470552B2
The present disclosure provides a method for culturing cells in exogenous lactic acid. Certain aspects of the present disclosure include the production of recombinant proteins, such as antibodies and fragments thereof. Certain aspects of the present disclosure also relate to methods of controlling lactic acid production, pH stability and osmolality in cell culture.
US08470551B2
The present invention relates to a fusion protein in which a myostatin mature protein is fused to a multimer of myostatin-derived antigenic peptide Myo-2, a surface expression vector containing a polynucleotide encoding the fusion protein, a recombinant microorganism transformed with the vector, and a feedstuff additive or a pharmaceutical composition containing the microorganism as an effective ingredient. The feedstuff additive or pharmaceutical composition according to the present invention can be used for muscle development and regulation of muscle growth in livestock and poultry, as well as for preventing and treating muscle-wasting diseases and degenerative diseases such as muscular dystrophy, muscular atrophy and the like. In addition, the transformed strain shows the same effect even if the strain itself after culture thereof is directly used, and thus it is very economical.
US08470528B2
Embodiments of the invention are generally directed to compositions and methods of delivering one or more transgene to a target cell, such as a tumor cell, in a site-specific manner to achieve enhanced expression and to constructs and compositions useful in such applications. In certain aspects, expression from a therapeutic nucleic acid may be assessed prior to administration of a treatment or diagnostic procedure to or on a subject.
US08470527B2
The claimed invention is directed toward modified HIV-1 gp41 C-terminal heptad repeat fusion inhibitors. In particular, peptide derivatives of C-34 were prepared (e.g., FB006M) and modified with 3-maleimidoproionic acid (MPA), which allows rapid and irreversible conjugation to serum albumin at a 1:1 molar ratio. These polypeptides have an extended half-life in vivo and display potent antiviral activity against HIV-1.
US08470521B2
The present invention relates to methods for removing antiplatelet agents and anticoagulants from a platelet preparation. In one embodiment, the method includes the step of flowing the platelet preparation through a filtering tube comprising a filtering membrane and separating the antiplatelet agents and anticoagulants from the platelet preparation by tangential flow filtration. In another embodiment, the method includes the step of passing the platelet preparation through porous material that specifically binds to the antiplatelet agents and anticoagulants.
US08470514B2
A low-cost information recording medium is provided by which good recording quality can be obtained even when information is recorded thereon in a high density using a blue laser. The recording medium has a recording layer which comprises Sb, O and M. A content of O atoms is 30 atom % or more but not more than 55 atom %, a content of M atoms is 5 atom % or more but not more than 35 atom %, and a content of Sb atoms is 20 atom % or more but not more than 55 atom %. The recording layer does not contain Au, Pt and Pd.
US08470497B2
Methods for attaching a subgasket to an ionomer membrane, wherein the methods provide for the precise location of the subgasket relative to the other component edges of the fuel cell, such as the catalyst layers, so as provide the functionality required to extend the ionomer membrane life and prevent damage to the ionomer membrane during the assembly process.
US08470466B2
A battery cover latching mechanism and a portable electronic device using the same are provided. The battery cover latching mechanism detachably locks a battery cover to the housing and includes an assembly portion, a locking assembly and a lock portion. The locking assembly is mounted to the assembly portion of the housing and includes an elastic piece and a latching member. The elastic piece is assembled within the receiving slot. The latching member is elastically and releasably assembled within the receiving slot by the elastic piece for locking or releasing the battery cover. The locking portion is formed on the battery cover and locked by the latching member.
US08470465B2
Disclosed is a battery device including a battery enclosure incorporating a battery cell. The battery device further includes an output terminal that outputs power of the battery cell. The battery enclosure includes a first surface, a second surface, a first step surface, a second step surface, a first engaging portion, a second engaging portion, a first groove, and a second groove formed in the second step surface and the second engaging portion, and a recess is provided in at least one of the first step surface and the second step surface.
US08470463B2
An apparatus and associated method are generally directed to a magnetic shield capable of screening magnetic flux with in-plane anisotropy. Various embodiments of the present invention may have at least one magnetic shield. The shield may be constructed of a Cobalt-Iridium compound capable of providing in-plane anisotropy along a longitudinal plane of the shield.
US08470459B2
The present invention describes processes for coating substrates with a nanocomposite SiCON material. In addition, the present invention describes the dielectric nanocomposite coatings.
US08470454B2
A material for an organic photoelectric device and an organic photoelectric device including the same, the material including an asymmetric compound represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, Ar1 is hydrogen or a substituted or unsubstituted aryl, provided that when Ar1 is a substituted aryl having a substituent, Ar2 is not the same as the substituent of Ar1, Ar2 and Ar3 are each independently a substituted or unsubstituted carbazolyl, a substituted or unsubstituted C2 to C30 heteroaryl, a substituted or unsubstituted C2 to C30 arylamine, or a substituted or unsubstituted C2 to C30 heteroarylamine, L1 and L2 are each independently a substituted or unsubstituted phenylene, a substituted or unsubstituted naphthylene, or a substituted or unsubstituted anthracene, and m and n are each independently integers of 1 to 4.
US08470453B2
A new substrate makes it possible to modify surface properties relating to biocompatibility. Said substrate has an electron donating surface, characterized in having metal particles on said surface, said metal particles comprising palladium and at least one metal chosen from gold, ruthenium, rhodium, osmium, iridium, and platinum, wherein the amount of said metal particles is from about 0.001 to about 8 μg/cm2. The substrate is suggested for different uses, such as for modifying the hydrophobicity, protein adsorption; tissue ingrowth, complement activation, inflammatory response, thrombogenicity, friction coefficient, and surface hardness.
US08470442B2
The present invention provides a composition and method for functionalizing nanoparticles that enables them to undergo reversible aggregation/deaggregation. The aggregation properties of this new system are reversible and readily monitored by optical absorbance measurements with the possibility of electrical and/or magnetic monitoring as well. The outer portion of the coating material is functionalized with polyethylene glycol (PEG) entities that facilitate biocompatibility and stability both in solution and in the solid state. Also provided are nanoparticles functionalized with rationally designed free radical initiators to effect tailored polymer growth from the surface. These systems may be used for a broad variety of applications, including biosensing with real-time feedback.
US08470439B2
Antireflective films are described having a surface layer comprising a the reaction product of a polymerizable low refractive index composition comprising at least one free-radically polymerizable fluoropolymer and surface modified inorganic nanoparticles. A high refractive index layer is coupled to the low refractive index layer. In one embodiment, the high refractive index layer comprises surface modified inorganic nanoparticles dispersed in a crosslinked organic material. The antireflective film is preferably durable, exhibiting a haze of less than 1.0% after 25 wipes with steel wool using a 3.2 cm mandrel and a mass of 1000 grams.
US08470438B2
There is provided a connecting structure with high reliability produced at low cost through the production process simplified by connecting connection electrodes, each including an organic film as an oxidation preventing film, to each other using a conductive adhesive. An electrode-connecting structure in which a first connection electrode 2 and a second connection electrode 10 are connected to each other with a conductive adhesive layer 9 therebetween includes organic films 6 and 11 formed on at least the first connection electrode and conductive particles 8 contained so that major axes of the particles are oriented in a thickness direction of the conductive adhesive layer and the average length of the major axes is larger than the total thickness of at least the organic films and the conductive adhesive layer, wherein the conductive particles pierce the organic films and contact the first connection electrode and the second connection electrode.
US08470436B1
A roofing system includes a plurality of insulation boards adapted for overlying a roof deck to form a layer of insulation, and a plurality of cover boards adapted for overlying the layer of insulation. Each insulation board includes a polymer foam material having a first density. Each cover board includes a material including polyisocyanurate, the material having a second density greater than the first. The foam material of the insulation boards may include, for example, polystyrene, polyurethane, or a phenolic material. The insulation boards and cover boards may include facers on top or bottom surfaces.
US08470432B2
An exemplary system, method of making, of use, for providing a hard shell cover for covering objects, boats, and like. Hard shell cover is disclosed as comprising, inter alia, a material layer 202, a material layer 204, and a material layer 206, and a transition region. Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize material and design performance or other material characteristics. Exemplary embodiments of the present invention representatively provide for hard cover components, methods of making and use that may be readily incorporated with existing technologies for the improvement of covers, packaging of objects, form factors, weights and/or other manufacturing, device or material performance metrics.
US08470431B2
Embossed sheet materials are disclosed. In accordance with the present disclosure, the embossing pattern includes at least one line element that has a gradually decreasing depth. The gradually decreasing depth has been found to alter the shadow characteristics of the embossing pattern thus creating a line in the embossing pattern that appears to decrease in line weight. The decrease in line weight is accomplished without having to change the width of the embossment, although the width can also be changed in conjunction with the depth. Being able to incorporate line weight variations into embossing patterns can dramatically improve the aesthetic appeal of the patterns.
US08470424B2
A method of improving the shelf life of a beverage may involve selecting a container for containing a beverage, the container having a first gas barrier property; selecting a blended label having a second gas barrier property; applying the blended label to the container such that the container has a resultant gas barrier property that is greater than the first gas barrier property; and placing the beverage in the container. A beverage container may have a PET wall having a first gas barrier property and a blended label adjacent the PET wall, the blended label having a second gas barrier property, wherein the container has a resultant gas barrier property that is greater than the first gas barrier property. Two different beverage products may be bottled in the same type of container using blended labels that have different gas barrier properties tailored for each beverage product.
US08470418B2
An exhaust pipe for an internal combustion engine includes a metal tube enclosing a passage through which an exhaust gas from the internal combustion engine passes, and a ceramic film covering the metal tube from the outside, the ceramic film containing no more than about 0.5 mass % of a metallic element which is dominantly present in a surface of the metal tube. The ceramic film is an SiON film containing about 30 mass % or less of O and about 10 mass % or more of N.
US08470415B2
Addition of a surfactant to either the under-layer, the image-receiving layer, or to both the under-layer and the image-receiving layer provides a quick-drying, transparent ink-jet recording film capable of achieving an optical density of at least 2.8 while still having a low haze and producing a number of grey levels.
US08470410B2
A method for producing nanostructured coatings on a substrate, comprising: preparing a nanocrystalline powder of a powder size comprised between 1 and 60 μm; and combining cleaning the surface of the substrate and cold spraying the nanocrystalline powder on the surface of the substrate, and a system for producing nanocrystalline coatings on a substrate, comprising a spray head, a cleaning head and a handling system monitoring the spray head and the cleaning head relative to the substrate to be coated, the spray head being a first cold spray head, the first cold spray head depositing on the substrate at least one nanocrystalline powder, the cleaning head optimizing the surface being coated with the at least one layer of nanocrystalline powder.
US08470406B2
The present invention provides a spray method and spray apparatus for bentonite-based material that allow forming a bentonite layer of high dry density. A spray apparatus 1 comprises a supersonic nozzle 2, to which a compressor 5 and a bentonite container 6 are connected. The supersonic nozzle 2 is fed compressed air from the compressor 5 and a bentonite-based material from the bentonite container 6. The compressed air, mixed with the bentonite-based material, is accelerated to supersonic speed when passing through a constriction portion 14 of the supersonic nozzle 2, and is sprayed at supersonic speed out of a jet orifice 11.
US08470405B2
To provide a method of forming a multi-layer paint film with which, even when applying three paint layers and baking the paint layer only once, it is possible to achieve a paint film appearance the same as that with the conventional baking twice method. [Means of Resolution] A method of forming a multi-layer paint film in which an aqueous first base-paint is painted on a base material on which an electro-deposition paint has been coated and a first base-paint layer is formed, an aqueous second base-paint is painted on said first base-paint layer as a wet-on-wet system and a second base-paint layer is formed and, moreover, a clear-paint is painted on the second base-paint layer as a wet-on-wet system and a clear-paint layer is formed and then the three paint layers are all baked at the same time which is characterized in that the aqueous first base-paint includes as essential components hydroxyl group containing non-ionic resin where ethylene oxide units and/or propylene oxide units are included in an amount of from 4 to 15 mass % in the resin and of which the resin acid value is less than 15 mgKOH/g and the hydroxyl group value is from 10 to 100 mgKOH/g, and crosslinking agent.
US08470390B2
A method of forming an integrated circuit structure includes providing a substrate; forming a metal feature over the substrate; forming a dielectric layer over the metal feature; and forming an opening in the dielectric layer. At least a portion of the metal feature is exposed through the opening. An oxide layer is accordingly formed on an exposed portion of the metal feature. The method further includes, in a production tool having a vacuum environment, performing an oxide-removal process to remove the oxide layer. Between the step of forming the opening and the oxide-removal process, no additional oxide-removal process is performed to the metal feature outside the production tool. The method further includes, in the production tool, forming a diffusion barrier layer in the opening, and forming a seed layer on the diffusion barrier layer.
US08470389B2
Provided is a method of manufacturing a solid electrolytic capacitor, including the steps of: forming a capacitor element including an anode body having a dielectric coating film on a surface thereof; impregnating the capacitor element with a polymerization liquid containing a precursor monomer of a conductive polymer and an oxidant; impregnating the capacitor element impregnated with the polymerization liquid with a silane compound or a silane compound containing solution; and forming a conductive polymer layer by polymerizing the precursor monomer after impregnating the capacitor element with the silane compound or the silane compound containing solution.
US08470385B2
A novel canola protein isolate including predominantly 2S canola protein and having equal to better solubility properties and improved clarity properties, has an increased proportion of 2S canola protein and a decreased proportion of 7S canola protein. The novel canola protein isolate is formed by heat treatment or isoelectric precipitation of aqueous supernatant from canola protein micelle formation and precipitation, to effect precipitation of 7S protein which is sedimented and removed. Alternatively, the novel canola protein isolate may be derived from a selective membrane procedure in which an aqueous canola protein solution containing 12S, 7S and 2S canola proteins is subjected to a first selective membrane technique to retain 12S and 7S canola proteins in a retentate, which is dried to provide a canola protein isolate including predominantly 7S canola protein, and to permit 2S canola protein to pass through the membrane. The permeate is subjected to a second selective membrane technique to retain 2S canola protein and to permit low molecular weight contaminants to pass through the membrane, and the retentate from the latter membrane technique is dried.
US08470384B2
The compound of the formula (1) is novel and is useful in conferring umami taste on consumable compositions, such as foodstuffs and beverages.
US08470379B2
A new use of a potent product extracted from rhizomes of Zingiber officinale in treating a disease associated with Helicobacter pylori such as gastritis, gastric ulcer or duodenal ulcer in a patient. The potent product is prepared by a process including the steps of a) preparing a crude extract from rhizomes of Zingiber officinale, said crude extract comprising 6-gingerol and 6-shogaol; b) introducing the crude extract to a normal phase chromatography column, and eluting the column with a first eluent having a polarity lower than that of a mixture of n-hexane and ethyl acetate in a weight ratio of 6:4 to obtain a potent fraction. Preferably, the potent fraction is substantially free of both 6-gingerol and 6-shogaol.
US08470374B2
[Object] The object of the invention is to provide a granular antimicrobial agent for water processing which has sufficient water permeability and antimicrobial effect, and the effective duration of which can be readily ascertained when used as a water-processing antimicrobial agent in the home.[Means for Solving the Problems] A granular antimicrobial agent for water processing which has a solubility at 25° C. of preferably 0.1 mg/g·L·hour to 1 mg/g·L·hour, comprises 0.5 wt % to 4 wt % of Ag2O, 2 wt % to 10 wt % of K2O, 35 wt % to 50 wt % of SiO2, and 40 wt % to 55 wt % of B2O3, and has a semispherical or conical shape in part was found. In addition, the inventors found that the antimicrobial agent is highly suitable for use in various kinds of water processing, particularly, the antimicrobial treatment of water used for washing, and completed the invention.
US08470372B2
Provided is a fusion protein, which comprises human papillomavirus E7 antigen, virus capsid protein and molecular chaperone. Also provided is a macromolecule with immunogenicity aggregated by the fusion proteins. The particle morphology of the macromolecule is different from that of the virus-like particle. The macromolecule can be used for treatment of human papillomavirus relating diseases.
US08470369B2
Bone paste compositions are described, which promote bone healing and remodeling by stimulating bone marrow elements using a combination of hemopoietic agents, angiogenic agents and a bone molecular signaling material.
US08470351B2
The present invention is directed to providing antimicrobial compositions consisting of a polymeric material and, embedded therein, an antimicrobial compound. The antimicrobial compound contains at least one quaternary ammonium group, at least one hydrocarbon chain comprising a minimum of 10 carbon atoms and a maximum of 24 carbon atoms, and one or more anions to balance the charge of the quaternary ammonium groups. The invention is also directed to a method of making antimicrobial compositions containing an antimicrobial compound embedded in a polymeric material.
US08470345B2
A lipid preparation including a glycerophospholipid or salt, conjugate and derivatives thereof, particularly phosphatidylserine (PS), phosphatidylcholine (PC), phosphatidylethanolamine (PE), phosphatidyl-inositol (PI), phosphatidylglycerol (PG) and phosphatidic acid (PA), and poly-unsaturated fatty acid (PUFA) acyl groups, particularly long-chain poly-unsaturated fatty acid (LC-PUFA) acyl groups such as omega-3 and/or omega-6 acyl groups, wherein said PUFA is covalently bound to said glycerophospholipid. The preparation possesses an improved bioactivity, and is useful in the treatment of various cognitive and mental conditions and disorders and for maintenance of normal functions of brain-related systems and processes.
US08470344B2
The present invention encompasses a method of preparing a ready-to-dissolve or ready-to-disperse composition of difficult to dissolve in water compounds and suspensions or aqueous solutions of difficult to dissolve in water compounds.
US08470333B2
Compositions, methods, and vaccines that may stimulate the immune system and that may be used for treating malignancies associated with overexpression of the HER-2 protein are provided. Such compositions include epitopes of the HER-2 proteins.
US08470328B2
The present invention provides a method of purifying an antibody by protein A affinity chromatography. More specifically, the present invention provides a technique relating to an elution buffer solution which provides a good antibody recovery rate without denaturation.
US08470321B2
Isolated antibodies have been characterized which show specific affinity to a repeating conformational epitope of a protofibril form of the human β-amyloid peptide as compare to low molecular weight forms of β-amyloid peptide. These isolated antibodies and related pharmaceutically effective compositions may be useful in the therapeutic and/or prophylactic treatment of Alzheimer's disease by effectively blocking the ability of the protofibril form of β-amyloid peptide to form fibril forms linked with complications associated with Alzheimer's disease. The isolated antibodies of the present invention are also useful in various diagnostic assays and associated kits.
US08470317B2
Novel polypeptides which comprise a receptor-ligand pair involved in T-cell, activation are disclosed. Nucleic acid molecules encoding said polypeptides, and vectors and host cells for expressing same are also disclosed. The polypeptides, or agonists and antagonists thereof, are used to treat T-cell mediated disorders.