A nonvolatile memory integrated circuit has a semiconductor substrate and a nonvolatile memory device on the semiconductor substrate. The device has a transistor and a capacitor on the semiconductor substrate, and a shared floating gate connecting the gate regions of the transistor and the capacitor. The transistor has at least a doping region defining the source and drain regions, as well as three other doping regions overlapping the source and drain regions. Also disclosed are a nonvolatile memory circuit with multiple such nonvolatile memory device, and methods for making the nonvolatile memory circuit with one or more such nonvolatile memory devices.