The invention provides a flash memory provided with floating gates with SONOS structure, comprising a source electrode, a drain electrode, a floating gate oxide film, a selecting gate, the first floating gate, the second floating gate, a first control gate oxide film, a second control gate oxide film, a first control gate and a second control gate, wherein the source electrode and the drain electrode are connected with a substrate; the floating gate oxide film is positioned on the substrate; the selecting gate is formed on the floating gate oxide film and positioned between the source electrode and the drain electrode; the first floating gate is formed on the floating gate oxide film, positioned between the source electrode and the selecting gate and has the SONOS structure; the second floating gate is formed on the floating gate oxide film, positioned between the drain electrode and the selecting gate and has the SONOS structure; the first control gate oxide film and the second control gate oxide film are respectively formed on the first floating gate and the second floating gate; and the first control gate and the second control gate are respectively positioned on the first control gate oxide film and the second control gate oxide film. As the SONOS structure is adopted by the floating gates of the flash memory provided by the invention, the flash memory is added with the capability of contracting the area of the flash memory again compared with polysilicon material.