The invention relates to an alloy electrode material for resistor type random access memory and a preparation technology thereof, aiming to improve the contact resistance of the electrode material anda resistance memory film, and improve the memory performance of the memory by adopting an alloying method. The electrode alloying is mainly based on material work function, chemical activity, mutualsolubility, bonding strength of oxide and other aspects. Main body metal material is selected based on Schottky contact as basis for the work function of the used resistance memory film; and an objectmaterial is selected by using chemical combination/transmission oxygen atoms as basis. The alloy electrode not only effectively widens the process parameter range for resistance memory film preparation, but also obviously improves the resistance memory retention and fatigue performance of the film. Because the preparation method compatible with the prior integrated circuit process is adopted, thetechnology contributes to practical application.