The present invention provides a method for manufacturing a semiconductor device. An electrode layer (2) is formed on a surface of a semiconductor substrate (1). Furthermore a resin insulating layer (3) is formed on the surface of the semiconductor substrate (1) so the electrode layer (2) can be covered by the resin insulating layer (3). A conical aperture (31) is formed in the resin insulating layer (3) through a byte (4) whose rake angle is zero or negative. The conical aperture (31) is provided with the following components: an opening which is limited by the resin insulating layer (3), a bottom (21) which is limited by the electrode layer (2), and a side wall (10) for connecting the opening (31) to the bottom (21). The rake angle of the byte (4) is zero or negative.