Disclosed is a photoelectric conversion device manufacturing method whereby a first p-type semiconductor layer (31), a first i-type semiconductor layer (32) and a first n-type semiconductor layer (33) which configures a first photoelectric conversion unit (3), and a second p-type semiconductor layer (41) which configures a second photoelectric conversion unit (4) formed from crystalline silicon series thin films, are formed consecutively in a reduced-pressure atmosphere; the second p-type semiconductor layer (41) is exposed to the atmosphere; and a second i-type semiconductor layer (42) and a second n-type semiconductor layer (43) which configure the second photoelectric conversion layer (4) are formed on the second p-type semiconductor layer (41) which has been exposed to the atmosphere.