Provided is a vacuum processing apparatus wherein high quality of manufactured film, largeness of area, and high speed of manufacturing speed are achieved. The vacuum processing apparatus is provided with: a discharge chamber (2) comprising a ridge waveguide having ridge electrodes that are placed facing each other so as to generate plasma therebetween; a gas supply unit (10) that is placed adjacently to the discharge chamber (2) and that supplies a mother gas which is used in the formation of plasma toward the ridge electrodes; a substrate (S) that is placed in a position at which the gas supply unit (10) is sandwiched between the discharge chamber (2) and the substrate (S), and which is treated with plasma; a pressure reduction vessel (7) housing at least the discharge chamber (2), the gas supply unit (10), and the substrate (S) in the interior; and an exhaust unit (9) in communication with the discharge chamber (2) at a position at which the discharge chamber (2) is sandwiched between the gas supply unit (10) in the pressure reduction vessel (7) and the exhaust unit (9) and reducing pressure in the interior of the pressure reduction vessel (7).