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发明公开
CN102482767A 溅射靶用铜材料及其制造方法 失效 - 权利终止

溅射靶用铜材料及其制造方法
摘要：
本发明涉及一种溅射靶用铜材料及其制造方法，该溅射靶用铜材料由纯度为99.99％以上的高纯度铜构成，进行溅射的面中的{111}面、{200}面、{220}面和{311}面的各自的X射线衍射的峰强度即I{111}、I{200}、I{220}和I{311}满足下式(1)，且晶粒的粒径为100～200μm。I{200}/(I{111}+I{200}+I{220}+I{311})≥0.4 …(1)。
摘要（英）：

Provided are a copper material for use in a sputtering target, said copper material comprising high-purity copper having a purity of at least 99.99%, and a manufacturing method therefor. X-ray diffraction peak intensities (I{111}, I{200}, I{220}, and I{311}) for surfaces on which sputtering is performed (surface {111}, surface {200}, surface {220}, and surface {311}) satisfy equation (1), and the diameters of crystal grains in the provided copper material are between 100 [mu]m and 200 [mu]m. (1) I{200}/(I{111}+I{200}+I{220}+I{311}) = 0.4.

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