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发明公开
CN102832337A 多位存储元件、存储装置及其制造方法 无效 - 撤回

多位存储元件、存储装置及其制造方法
摘要：
本发明提供多位存储元件、包括多位存储元件的存储装置及其制造方法。所述存储元件可包括存储层和为存储层提供多位存储特性的辅助层。存储层可具有包括第一材料层和第二材料层的多层结构，并可因第一材料层和第二材料层之间的离子物种的移动而具有电阻变化特性。第一材料层可为供氧层，而第二材料层可为氧交换层。辅助层可包含氧化物。例如，辅助层可包含氧化硅层。可用金属至少部分地掺杂辅助层和/或存储层。例如，所述金属可以是钨。
摘要（英）：

The invention provides multi-bit memory elements, memory devices including the multi-bit memory elements and methods for manufacturing the same. One memory element may include a memory layer and an auxiliary layer to provide a multi-bit memory characteristic for the memory layer. The memory layer may include a first material layer and a second material layer, and the memory layer may have a resistance change due to the movement of ion species between the first material layer and the second material layer. The first material layer may be an oxygen supplying layer, and the second material layer may be an oxygen exchange layer. The auxiliary layer may include an oxide. The auxiliary layer may be a silicone oxide layer. The auxiliary layer may partially be doped with a metal, for instance, tungsten.

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