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发明公开
CN103021812A 一种Ⅲ-ⅤOI结构的制备方法 有权

一种Ⅲ-ⅤOI结构的制备方法
摘要：
本发明提供一种Ⅲ-ⅤOI结构的制备方法，至少包括以下步骤：1）提供一半导体衬底，于所述半导体衬底表面形成GaAs层，于所述GaAs层表面形成Ⅲ-Ⅴ半导体层，于所述Ⅲ-Ⅴ半导体层表面形成第一SiO2层，所述半导体衬底为Ge、Ge/Si及Ge/GeSi/Si衬底的一种；2）提供一表面具有第二SiO2层的Si衬底，键合所述第一SiO2层及第二SiO2层；3）采用XeF2气体腐蚀以去除所述半导体衬底，获得GaAs层/Ⅲ-Ⅴ半导体层/SiO2层/Si衬底结构。本发明具有以下有益效果：通过分子束外延或超高真空化学气相沉积的手段可以获得高质量的Ⅲ-Ⅴ半导体层；通过高选择性气体腐蚀的方法制备Ⅲ-ⅤOI，可以有效地将半导体衬底去除的同时保持了Ⅲ-Ⅴ半导体层完整性，从而有效地制备出高质量的Ⅲ-ⅤOI。
摘要（英）：

The invention provides a method for preparing an III-VOI structure. The method at least includes the steps: 1) providing a semiconductor substrate, forming a GaAs layer on the surface of the semiconductor substrate, forming an III-V semiconductor layer on the surface of the GaAs layer and forming a first SiO2 layer on the surface of the III-V semiconductor layer; 2) providing a Si substrate with a second SiO2 layer on the surface and bonding the first SiO2 layer and the second SiO2 layer; and 3) removing the semiconductor substrate by XeF2 gas corrosion to obtain a GaAs layer/III-V semiconductor layer/SiO2 layer/Si substrate structure. The method has the advantages that the high-quality III-V semiconductor layer can be obtained by means of molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition, the III-VOI structure is prepared by a high-selectivity gas corrosion method, completeness of the III-V semiconductor layer can be kept while the semiconductor substrate is effectively removed, and accordingly, the high-quality III-VOI structure is effectively prepared.

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