The invention discloses a plasma etching chamber. An adjusting ring on the periphery of an upper electrode is composed of an inner ring and an outer ring with impedance difference more than two times to adjust radio frequency coupling inside the plasma etching chamber, thus the etching efficiency on the edge of a substrate is influenced, evenness of etching of the substrate is adjusted, a longitudinal etching deep hole and a lateral etching groove can be achieved under the same etching condition, and good evenness is kept.