The invention provides a fast recovery diode (FRD) chip and a manufacturing method for the FRD chip. The FRD chip comprises a chip terminal protection region, wherein the chip terminal protection region comprises a P-type doped region positioned at the bottom of the chip terminal protection region; the P-type doped region is contacted with a cathode electrode; and the junction depth of the P-type doped region is less than that of an N+-type cathode region. When the FRD is conducted forward, zero electron injection is realized in an N-base region in the FRD terminal protection region by the P-type doped region, so that the concentration of carriers in the N-base region in the FRD terminal protection region is greatly reduced; when the FRD is shut down, the extraction speed of the carriers in the overall N-base region can be accelerated, namely the shutdown time is reduced; and therefore, the shutdown loss is reduced.