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发明公开
CN103280399A 磁控溅射法制备TiCoSb半导体薄膜 无效 - 撤回

磁控溅射法制备TiCoSb半导体薄膜
摘要：
本发明公开了磁控溅射法制备TiCoSb半导体薄膜，涉及无机化合物功能薄膜制备技术领域及磁控溅射技术领域。其特征在于是通过一种特殊设计的复合靶材，利用普通磁控溅射及后退火处理得到成分分布均匀的、符合化学计量比的多元素化合物TiCoSb薄膜。其主要工艺参数为：溅射功率20W，工作气压0.7Pa，溅射时间60-120min，快速退火时间1-5min，常规退火时间30-120min。本发明实现了TiCoSb材料的薄膜化，为对其热电和光电性能的进一步研究及对其在薄膜热电、光电器件领域的应用有相当积极的作用。
摘要（英）：

The invention discloses a method for preparing a titanium-cobalt-stibium (TiCoSb) semiconductor film by a magnetron sputtering process and relates to the technical field of inorganic compound functional film preparation and the technical field of magnetron sputtering. The method for preparing the TiCoSb semiconductor film by the magnetron sputtering process is characterized in that the multielement compound TiCoSb film which is uniform in component distribution and meets stoichiometric ratio is obtained by adopting a specially designed compound target material by utilizing common magnetron sputtering and post-annealing treatment. Main process parameters of the method are shown as follows: sputtering power 20W, working air pressure 0.7Pa, sputtering time 60-120min, rapid annealing time 1-5min, and conventional annealing time 30-120min. According to the method for preparing the TiCoSb semiconductor film by the magnetron sputtering process, the thinning of a TiCoSb material is realized, and a quite positive effect is exerted on the further study of the thermoelectric property and the photoelectric property of the TiCoSb material and the application of the TiCoSb material in the field of film thermoelectric and photoelectric devices.

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