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发明公开
CN103311390A 一种氮化镓基发光二极管外延片MQS发光层 无效 - 撤回

一种氮化镓基发光二极管外延片MQS发光层
摘要：
本发明公开了一种氮化镓基发光二极管外延片MQS发光层，包括蓝宝石衬底层（1）、Buffer—缓冲层（2）、N型GaN层（3）、MQW发光层（4）以及P型GaN层（5），其特征在于：所述MQW发光层（4）包括GaN超晶格层（41）、InGaN超晶格层（42）,所述GaN超晶格层（41）厚度为11nm,InGaN超晶格层（42）厚度为3nm，该技术方案有效解决传统外延片的MQS发光层在生长过程中的厚度问题，导致发光二极管的亮度通常较低。
摘要（英）：

The invention discloses an MQS light-emitting layer of a GaN-based LED epitaxial wafer. The MQS light-emitting layer comprises a sapphire substrate layer (1), a buffer layer (2), an N-type GaN layer (3), a MQW light-emitting layer (4) and a P-type GaN layer (5). The MQS light-emitting layer is characterized in that the MQW light-emitting layer (4) comprises a GaN superlattice layer (41) and an InGaN superlattice layer (42), the GaN superlattice layer (41) is 11nm in thickness, and the InGaN superlattice layer (42) is 3nm in thickness. According to the technical scheme, the MQS light-emitting layer has the advantages that the thickness problem in the growth process of the MQS light-emitting layer of the traditional epitaxial wafer is solved effectively and generally low brightness of the LED is avoided.

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