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发明公开
CN103887366A 一种能带可调的铜铟铝硒薄膜的制备方法 失效 - 权利终止

一种能带可调的铜铟铝硒薄膜的制备方法
摘要：
本发明公开了一种能带可调的铜铟铝硒薄膜的制备方法，其中铜铟铝硒薄膜的组成式为：CuIn1-xAlxSe2，0≤x≤1，包括步骤：(1)依次使用丙酮、乙醇和去离子水对玻璃衬底进行超声清洗，清洗后置于去离子水中保存；(2)使用磁控溅射方法依次在玻璃衬底上沉积铜铟合金层、铝层、铜层，得到层状的金属薄膜前驱体；(3)将层状的金属薄膜前驱体和硒粉置于石墨盒中，进行后硒化处理，得到能带可调的铜铟铝硒薄膜。本发明通过控制溅射铜铟合金靶和铝靶的时间固定，而改变溅射铜靶的时间，从而获得不同组分比的铜铟铝硒薄膜，实现铜铟铝硒薄膜材料能带的调节。本发明方法简单方便，可实现铜铟铝硒薄膜的能带在微小范围内实现调节。
摘要（英）：

The invention discloses a preparation method of a copper indium aluminum selenium film with an adjustable energy band. The composition formula of the copper indium aluminum selenium film is CuIn1-xAlxSe2, and x is larger than or equal to 0 and is smaller than or equal to 1. The method comprises the steps of (1) carrying out ultrasonic cleaning of a glass substrate by using acetone, ethanol and deionized water orderly and storing the glass substrate in deionized water after cleaning; (2) using a magnetron sputtering method to sequentially deposit a copper indium alloy layer, an aluminum layer and a copper layer on the glass substrate to obtain a layered metal film precursor, (3) placing the layered metal film precursor and selenium power in a graphite box to carry out subsequent selenium treatment to obtain the copper indium aluminum selenium film with the adjustable energy band. According to the method, through controlling the time fixation of a sputtering copper indium alloy target and an aluminum target, the time of a sputtering copper target is changed, thus copper indium aluminum selenium films with different component ratios are obtained, and the adjustment of the energy band of copper indium aluminum selenium film material is realized. The method is simple and convenient, and the adjustment of the energy band of the copper indium aluminum selenium film in a small range can be realized.

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