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CN103972105A 具有SiGe沟道的MOSFET及其形成方法 无效 - 驳回

具有SiGe沟道的MOSFET及其形成方法
摘要：
本发明提出一种具有SiGe沟道的MOSFET及其形成方法。其中形成方法包括以下步骤：提供顶部具有Si层的衬底；向Si层表层注入含有Ge元素的原子、分子、离子或等离子体，以形成SiGe层；在SiGe层之上形成栅堆叠结构，并在栅堆叠结构两侧形成源和漏。本发明的MOSFET的形成方法能够形成具有SiGe沟道的场效应晶体管，其中SiGe沟道的厚度较薄、晶体质量较好，因此晶体管具有良好的电学性能，且本方法具有简单易行、成本低的优点。
摘要（英）：

The invention provides an MOSFET with a SiGe channel and a forming method of the MOSFET. The forming method includes the following steps of providing a substrate with a Si layer at the top, injecting atoms, molecules, ions or plasmas containing Ge elements into the surface layer of the Si layer so that the SiGe layer can be formed, forming a gate stacking structure on the upper portion of the SiGe layer, and forming a source and a drain on the two sides of the gate stacking structure. According to the forming method of the MOSFET, the MOSFET with the SiGe channel can be formed, the SiGe channel is thin, crystalline quality is good, and accordingly the MOSFET has good electrical property and the method has the advantages of being simple, easy to carry out and low in cost.

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