The invention provides a method for improving a polycrystalline silicon furnace tube control wafer monitoring mechanism and relates to the technical field of semiconductor manufacturing. The method comprises the following steps that three non-product wafer zones are arranged in a wafer boat; zones except for the three non-product wafer zones in the wafer boat are filled with a plurality of product wafers and a plurality of first stopping sheets; the non-product wafer zones are filled with first stopping sheets, second stopping sheets and control wafers; the wafer boat is placed in a furnace tube for a polycrystalline silicon manufacturing technology; the used second stopping sheets are washed and remanufactured; the steps are repeated, wherein each second stopping sheet is formed after silicon nitride and silicon oxide are deposited on a polished section and only silicon oxide is deposited on the control wafers. The polycrystalline silicon deposition speed on the control wafer and the polycrystalline silicon deposition speed on the surfaces of the product wafers are identical in the furnace tube technology process, the number of particles and the thicknesses of films of the product wafers can be effectively and accurately reflected through the control wafers, the number of the control wafers is reduced, the measurement time is shortened, and therefore the cost for schedule monitoring is reduced and the efficiency for schedule monitoring is improved.