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CN104078376A 用于炉管高温退火工艺的控片、制造方法及监控方法 无效 - 驳回

用于炉管高温退火工艺的控片、制造方法及监控方法
摘要：
一种用于炉管高温退火工艺的控片，包括：硅基衬底，以及沉积在所述硅基衬底上的二氧化硅薄膜层，且所述二氧化硅薄膜层的厚度范围为数值30～50埃中的任一取值。本发明所述用于炉管高温退火工艺的控片通过在所述硅基衬底上淀积膜层厚度范围为数值30～50埃中的任一取值之二氧化硅薄膜层，不仅可以保护所述硅基衬底，使其在高温惰性气氛下不被钝化，并消除晶格损伤，对所述炉管高温退火工艺进行实时监控，而且可采用酸性溶液去除所述控片之二氧化硅薄膜层，并循环使用。
摘要（英）：

A control wafer for a furnace tube high-temperature annealing process comprises a silicon-based substrate and a silicon dioxide film layer deposited on the silicon-based substrate, wherein the thickness of the silicon dioxide film layer ranges from 30 angstroms to 50 angstroms. The thickness of the silicon dioxide film layer deposited on the silicon-based substrate ranges from 30 angstroms to 50 angstroms, so that the control wafer for the furnace tube high-temperature annealing process can protect the silicon-based substrate, enable the silicon-based substrate to be passivated under a high-temperature inert atmosphere, eliminate lattice damage and perform real-time monitoring on the furnace tube high-temperature annealing process, can adopt an acid solution to remove the silicon dioxide film layer of the control wafer and can be used cyclically.

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