利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN104088018A 一种单晶硅片制绒的清洗方法及单晶制绒设备 无效 - 撤回

一种单晶硅片制绒的清洗方法及单晶制绒设备
摘要：
本发明公开了一种单晶硅片制绒的清洗方法，通过在单晶制绒后用氢氟酸加盐酸的混酸清洗溶液进行两次清洗，第一次氢氟酸加盐酸清洗可以有效去除钠离子、钾离子等主要金属杂质，并去除硅片表面的薄层二氧化硅；第二次氢氟酸加盐酸清洗更进一步清洗硅片浅表层金属杂质(第一次清洗后残留的金属杂质)，另外去除硅片表面的二氧化硅层，达到有效的脱水效果。同时，本发明还公开了一种单晶制绒设备，通过在盐酸槽中同时引入盐酸管道与氢氟酸管道，在氢氟酸槽中同时引入氢氟酸管道与盐酸管道；从而可方便地获得盐酸与氢氟酸的混合溶液，方便进行上述单晶硅片制绒的清洗方法。
摘要（英）：

The invention discloses a mono-crystalline silicon wafer texturing cleaning method. According to the invention, after mono-crystalline texturing, a mixed acid cleaning solution comprising hydrofluoric acid and hydrochloric acid is used for carrying out cleaning twice. With the first time of hydrofluoric acid and hydrochloric acid cleaning, main metal impurities such as sodium ions and potassium ions can be effectively removed, and thin-layer silicon dioxide on the surface of the silicon wafer can be removed. With the second time of hydrofluoric acid and hydrochloric acid cleaning, silicon wafer sallow-surface metal impurities (metal residues after the first cleaning) can be further removed, and a silicon dioxide layer on the surface of the silicon wafer can be removed, such that an effective dehydration effect can be achieved. Also, the invention discloses a mono-crystalline texturing device. According to the invention, a hydrochloric acid pipe and a hydrofluoric acid pipe are both introduced into a hydrochloric acid tank, and a hydrofluoric acid pipe and a hydrochloric acid pipe are both introduced into a hydrofluoric acid tank, such that a mixed solution of hydrochloric acid and hydrofluoric acid can be conveniently obtained, and the mono-crystalline silicon wafer texturing cleaning method provided by the invention is facilitated.

0/0