利索-全球专利检索

  1. 登录
  2. 注册
发明授权
CN104143558B 一种提高阱容量的图像传感器像素及其制作方法 有权

一种提高阱容量的图像传感器像素及其制作方法
摘要：
本发明公开了一种提高阱容量的图像传感器像素及其制作方法，包括置于半导体基体中的光电二极管以及电荷传输晶体管，光电二极管的侧面设置有晶体管电容，晶体管电容的栅极位于所述半导体基体内，晶体管电容的沟道位于光电二极管中。此晶体管电容加入到光电二极管中，有效提高了图像传感器的像素饱和阱容量，拓展了动态范围。
摘要（英）：

The invention discloses an image sensor pixel with the improved trap capacity and a manufacturing method of the image sensor pixel. The image sensor pixel comprises a photodiode and a charge transfer transistor which are placed in a semiconductor substrate, a transistor capacitor is arranged on the side face of the photodiode, a grid electrode of the transistor capacitor is located in the semiconductor substrate, and a channel of the transistor capacitor is located in the photodiode. The transistor capacitor is additionally arranged into the photodiode, so that the pixel saturation trap capacity of an image sensor is effectively improved, and the dynamic range is broadened.

公开/授权文献
0/0