Transistor devices having an anti-fuse configuration and methods of forming the transistor devices are provided. An exemplary transistor device includes a semiconductor substrate including a first fin. A first insulator layer overlies the semiconductor substrate and has a thickness less than a height of the first fin. The first fin extends through and protrudes beyond the first insulator layer to provide a buried fin portion and an exposed fin portion. A gate electrode structure overlies the exposed fin portion. A gate insulating structure is disposed between the first fin and the gate electrode structure. The gate insulating structure includes a first dielectric layer overlying a first surface of the first fin. The gate insulating structure further includes a second dielectric layer overlying a second surface of the first fin. A potential breakdown path is defined between the first fin and the gate electrode structure through the first dielectric layer.