In the present invention, p+ type regions (3, 4), and a p type region (5) are selectively provided in the front surface layer of a silicon carbide substrate base body. The p+ type region (3) is provided in a breakdown voltage structure section (102) surrounding an active region (101). The p+ type region (4) is provided in the active region (101), and constitutes a JBS structure. The p type region (5) surrounds the p+ type region (3), and constitutes a junction terminal (JTE) structure. A Schottky electrode (9) forms a Schottky junction with an n type silicon carbide epitaxial layer (2). Furthermore, the Schottky electrode (9) extends onto an interlayer insulating film (6) that covers a part of the p+ type region (3) and the p type region (5), and the extending portion functions as a field plate. Consequently, a semiconductor device configured using a highly reliable wide band gap semiconductor that can maintain a high withstand voltage, and a method for manufacturing the semiconductor device can be provided.