利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN104681447A 半导体器件的制造方法 无效 - 驳回 复审申请

半导体器件的制造方法
摘要：
一个目的是提供包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中以其形成沟道的阈值电压为正并且尽可能接近0V。形成保护绝缘层以覆盖包括通过第一热处理来脱水或脱氢的氧化物半导体层的薄膜晶体管，并且执行在比第一热处理低的温度下的第二热处理，第二热处理中温度的上升和下降重复多次，由此能够制造包括氧化物半导体层的薄膜晶体管，其中以其形成沟道的阈值电压为正并且尽可能接近0V，而无需取决于沟道长度。
摘要（英）：

It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

0/0