A silicon carbide semiconductor substrate is configured from a silicon carbide single crystal, and has, as an identifying indicator, a mark (2) formed at least on the surface thereof, said mark being configured from a crystal defect. When a silicon carbide single crystal (3) is grown using the silicon carbide semiconductor substrate as a seed crystal, the mark (2) can be propagated in the silicon carbide single crystal (3) as the crystal defect. When silicon carbide semiconductor substrates (4) are manufactured using the silicon carbide single crystal (3), each of the silicon carbide semiconductor substrates (4) can be in a state with the mark (2) having been already formed.