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发明公开
CN105097664A 器件和用于减小金属的接触电阻的方法 有权

器件和用于减小金属的接触电阻的方法
摘要：
本发明公开了用于具有减小的接触电阻的集成电路的结构。该结构包括衬底、沉积在衬底上的覆盖层、沉积在覆盖层上的介电层、以及嵌入在介电层中的沟槽。该沟槽包括沉积在沟槽的侧壁上的TaN层，其中，TaN层具有大于钽的氮浓度；沉积在TaN层上的Ta层；以及沉积在Ta层上的Cu。该结构还包括在填充的沟槽的底部集成到沟槽的通孔。在一个实施例中，TaN层和Ta层均以物理汽相沉积(PVD)形成，其中，通过以至少20sccm的N2流量等离子体溅射Ta靶来形成TaN层。该结构提供低的接触电阻(Rc)和紧凑的Rc分布。本发明还涉及器件和用于减小金属的接触电阻的方法。
摘要（英）：

A structure for an integrated circuit with reduced contact resistance is disclosed. The structure includes a substrate, a cap layer deposited on the substrate, a dielectric layer deposited on the cap layer, and a trench embedded in the dielectric layer. The trench includes a TaN layer deposited on a side wall of the trench wherein the TaN layer has a greater concentration of nitrogen than tantalum, a Ta layer deposited on the TaN layer, and a Cu deposited on the Ta layer. The structure further includes a via integrated into the trench at bottom of the filled trench. In an embodiment, both the TaN layer and the Ta layer are formed with physical vapor deposition (PVD) wherein the TaN layer is formed with plasma sputtering a Ta target with an N2 flow at least 20 sccm. The structure offers low contact resistance (Rc) and tight Rc distribution. The invention also relates to a device and a method for reducing contact resistance of a metal.

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