利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN105551980A 半导体装置的制法 失效 - 权利终止

半导体装置的制法
摘要：
提供半导体装置的制法，其为不会降低成型性及固化性、高温高湿可靠性优异的半导体装置的制法，使用含下述(A)～(D)成分的半导体密封用环氧树脂组合物对半导体元件树脂密封，在树脂密封后施加加热处理工序，此加热处理在下述(x)所示条件下进行。(A)下述通式(1)所示的环氧树脂。上述式(1)中，X为单键、-CH2-、-S-或-O-，R1～R4为-H或-CH3且相互可相同也可不同，(B)酚醛树脂。(C)胺系固化促进剂。(D)无机质填充剂。(x)由热处理时间(t分钟)与热处理温度(T℃)的关系满足t≥3.3×10-5exp(2871/T)的区域构成的热处理条件，其中，185℃≤热处理温度T℃≤300℃。
摘要（英）：

A method of manufacturing a semiconductor device which is excellent in high-temperature high-humidity reliability without decreasing moldability and curability is provided. The method includes sealing a semiconductor element in resin using a semiconductor-sealing epoxy resin composition; and then performing a heating treatment. The semiconductor-sealing epoxy resin composition contains (A) an epoxy resin of formula (1): wherein X is a single bond, -CH2-, -S- or -O-; and R1 to R4, which may be the same as or different, are each -H or -CH3, (B) a phenolic resin, (C) an amine-based curing accelerator, and (D) an inorganic filler. The heating treatment is performed under heat treatment conditions defined by a region in which a relationship t>=3.310-5 exp(2871/T) is satisfied where t is heat treatment time in minutes and T is heat treatment temperature in DEG C and where 185 DEG C<=T<=300 DEG C.

公开/授权文献
0/0