The invention provides a high-power crimping type IGBT device. The high-power crimping type IGBT device comprises a tube shell, and platy metal electrodes coaxially arranged at the upper and lower ends of the tube shell, wherein lug bosses are mounted on the inner side face of the metal electrode at the lower end; power sub modules are crimped between the lug bosses and the metal electrode at the upper end; crossed silicon steel sheet groups for dividing the inner side face of the metal electrode at the lower end into four regions are perpendicularly mounted on the inner side face of the metal electrode at the lower end; the lug bosses are distributed in the four regions; and an insulating frame is arranged on the exteriors of the silicon steel sheet groups. According to the technical scheme of the high-power crimping type IGBT device provided by the invention, the multiple lug bosses are divided, so that mutual influences caused by magnetic fields generated when the transient state current passes through the lug bosses are lowered; and therefore, the minimum stray inductance among the lug bosses in a local region is realized, and the usage performance of the device is improved.