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发明公开
CN105580139A 半导体装置 无效 - 撤回

半导体装置
摘要：
一种半导体装置(10)，包括半导体基板(11)。该半导体基板的元件区域(12)包括具有第一导电类型的第一体区域(36a)，具有第二导电类型的第一漂移区(32a)，以及多个第一浮动区域(34)，各所述第一浮动区域具有所述第一导电类型。终端区域包括具有所述第二导电类型的第二漂移区(32b)，以及多个第二浮动区域(37)，各所述第二浮动区域具有所述第一导电类型。各所述第二浮动区域被所述第二漂移区所围绕。当第一漂移区的中心的深度被看作参考深度时，至少一个第二浮动区域被配置成比每个第一浮动区域更接近于所述参考深度。
摘要（英）：

A semiconductor device (10) includes a semiconductor substrate (11). The element region (12) of the semiconductor substrate includes a first body region (36a) haying a first conductivity type, a first drift region (32a) having a second conductivity type, and a plurality of first floating regions (34), each the first floating regions having the first conductivity type. The termination region includes a second drift region (32b) having the second conductivity type, and a plurality of second floating regions (37), each of the second floating regions having the first conductivity type. The each of the second floating regions is surrounded by the second drift region. When a depth of a center of the first drift region is taken as a reference depth, at least one of the second floating regions is placed closer to the reference depth than each of the first floating regions.

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