The invention provides a semiconductor device. The semiconductor device includes a plurality of fin structures which vertically protrude out form a substrate and extend along a first direction, source and drain regions which are formed at two ends of each fin structure along the first direction, channel regions which contain a plurality of nanowires and are connected between the source and drain regions along the first direction, a gate stack structure which extends along a second direction and surrounds each nanowire, and a filling layer which is located between the bottoms of the plurality of nanowires and the substrate. According to the semiconductor device and the manufacture method thereof, the channels of nanowires are formed between the fin-shaped source and drain regions, and therefore, process cost can be decreased, process complexity can be reduced, and grid control ability and device density can be effectively improved.